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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2015-6-3-424-434</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-1000</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>CHEMISTRY AND MATERIALS SCIENCE</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ХИМИЯ И НАУКА О МАТЕРИАЛАХ</subject></subj-group></article-categories><title-group><article-title>Chemostimulating e ect of mixture and separate evaporation of manganese (IV) oxide compositions  with lead (II) oxide and vanadium (V) oxide on GaAs thermal oxidation</article-title><trans-title-group xml:lang="ru"><trans-title></trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Mittova</surname><given-names>I. Yu.</given-names></name></name-alternatives><bio xml:lang="en"><p>Universitetskaya pl.1, Voronezh, 394893</p></bio><email xlink:type="simple">imittova@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Kostryukov</surname><given-names>V. F.</given-names></name></name-alternatives><bio xml:lang="en"><p>Universitetskaya pl.1, Voronezh, 394893</p></bio><email xlink:type="simple">vc@chem.vsu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>Voronezh State University</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2015</year></pub-date><pub-date pub-type="epub"><day>15</day><month>08</month><year>2025</year></pub-date><volume>6</volume><issue>3</issue><fpage>424</fpage><lpage>434</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Mittova I.Y., Kostryukov V.F., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Mittova I.Y., Kostryukov V.F.</copyright-holder><copyright-holder xml:lang="en">Mittova I.Y., Kostryukov V.F.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/1000">https://nanojournal.ifmo.ru/jour/article/view/1000</self-uri><abstract><p>The e ects of variable compositions of manganese (IV) oxide- lead (II) oxide and manganese (IV) oxide vanadium (V) oxide on the GaAs thermal oxidation process have been studied. The spatial separation of the oxides in MnO2 + PbO and MnO2 + V2O5 binary compositions activating the thermal oxidation of GaAs has made it possible to locate the interactions between these oxides that are responsible for the non-linear e ects observed in their coaction. Solid-phase interactions enhance the chemostimulating activities of both oxides (a positive nonlinear e ect takes place). Gas-phase interactions cause a marked negative deviation from the additive chemical stimulation e ect.</p></abstract><kwd-group xml:lang="en"><kwd>semiconductors</kwd><kwd>gallium arsenide</kwd><kwd>thin lms</kwd><kwd>thermal oxidation</kwd><kwd>nonlinear effects</kwd></kwd-group><funding-group><funding-statement xml:lang="en">The reported study was supported by he Ministry of Education and Science of the  Russian Federation as a project part of the State Task for higher education institutions in the sphere of scientic research for years 20142016 (project N 225), and funded by the Russian Foundation for Basic Research (grant N 13-03-00705-a).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Mittova I.Ya., Pshestanchik V.R., Kostryukov V.F. Thermal Oxidation of Gallium Arsenide in oxygen: combined e ect of Antimony and Bismuth oxides. 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