najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМОnajo-1037Research ArticleCHEMISTRY AND MATERIAL SCIENCEХИМИЯ И МАТЕРИАЛОВЕДЕНИЕGaAs thermal oxidation activated by the coaction of p-block oxidesMittovaI. Ya.

Universitetskaya pl. 1, Voronezh, 394893

vc@chem.vsu.ruKostryukovV. F.

Universitetskaya pl. 1, Voronezh, 394893

Voronezh State UniversityRussian Federation20141508202553417426Copyright © Mittova I.Y., Kostryukov V.F., 20252025Mittova I.Y., Kostryukov V.F.Mittova I.Y., Kostryukov V.F.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/1037

This study summarizes the results for the investigation of the process of gallium arsenide thermal oxidation processes activated by the coaction of the oxides in Sb2O3+Bi2O3, Sb2O3+PbO and PbO+Bi2O3 binary compositions was studied. The analysis of the character and nature of nonlinear effect of various compositions of chemostimulators on the GaAs-supported oxide layer thickness grown on the GaAs surface was performed. It is shown that the actual oxide layer thickness is different from the additive value. The main patterns of the impact for binary compositions of p-element oxides of p-elements on thermal oxidation of gallium arsenide determined by physico-chemical nature of chemostimulators, the nature of their interaction and the method of administration in the system were described.

semiconductorsgallium arsenidethin filmsthermal oxidationnonlinear effectsThis work was supported by the Ministry of Education and Science of the countryregionplaceRussian Federation in line with government order for Higher Education Institutions in the field of science for 2014-2016 years (project No. 673) and by RFBR grant No. 13-03- 00705-a.ReferencesMittova I.Ya., Pshestanchik V.R. The chemistry of processes which create dielectric layers with functional group substituents on semiconductors by impurity thermo-oxidation. Russian Chemical Reviews, 60 (9), P. 967–980 (1991).Mittova I.Ya., Pshestanchik V.R. The chemistry of processes which create dielectric layers with functional group substituents on semiconductors by impurity thermo-oxidation. Russian Chemical Reviews, 60 (9), P. 967–980 (1991).Ke Y., Malino S., et al. Structural studies of sulfur-passivated GaAs (100) surfaces with LEED and AFM. Surface Science, 415, P. 29–36 (1998).Ke Y., Malino S., et al. Structural studies of sulfur-passivated GaAs (100) surfaces with LEED and AFM. Surface Science, 415, P. 29–36 (1998).Bang K.-H., Hwang D.-K., et al. Comparative studies on structural and optical properties of ZnO films grown on c-plane sapphire and GaAs (001) by MOCVD. Solid State Communication, 126 (11), P. 623–627 (2003).Bang K.-H., Hwang D.-K., et al. Comparative studies on structural and optical properties of ZnO films grown on c-plane sapphire and GaAs (001) by MOCVD. Solid State Communication, 126 (11), P. 623–627 (2003).Panin A.V., Shugurov A.R., Kalygina V.M. Effect of Sulfur and Selenium on the Surface Relief of Insulating Films and Electrical Characteristics of Metal-Insulator-p-GaAs Structures. Semiconductors, 35 (1), P. 78–83 (2001).Panin A.V., Shugurov A.R., Kalygina V.M. Effect of Sulfur and Selenium on the Surface Relief of Insulating Films and Electrical Characteristics of Metal-Insulator-p-GaAs Structures. Semiconductors, 35 (1), P. 78–83 (2001).Takagi H., Kano G., Teramoto I. Thermal oxidation of GaAs in arsenic trioxide vapor. J. Electrochem. Soc., 125 (4), P. 579–581 (1978).Takagi H., Kano G., Teramoto I. Thermal oxidation of GaAs in arsenic trioxide vapor. J. Electrochem. Soc., 125 (4), P. 579–581 (1978).Mittova I.Ya., Tomina E.V., Lapenko A.A., Sladkopevtcev B.V. The catalytic action of vanadium and its oxide (V) in the oxidation processes of AIIIB V semiconductors. Nanosystems: physics, chemistry, mathematics, 3 (2), P. 116–138 (2012).Mittova I.Ya., Tomina E.V., Lapenko A.A., Sladkopevtcev B.V. The catalytic action of vanadium and its oxide (V) in the oxidation processes of AIIIB V semiconductors. Nanosystems: physics, chemistry, mathematics, 3 (2), P. 116–138 (2012).Mittova I.Ya., Pshestanchik V.R., Kostryukov V.F. Thermal oxidation of Gallium Arsenide in oxygen: combined effect of Antimony and Bismuth oxides. Russian Journal of Inorganic Chemistry, 42 (2), P. 182–186 (1997).Mittova I.Ya., Pshestanchik V.R., Kostryukov V.F. Thermal oxidation of Gallium Arsenide in oxygen: combined effect of Antimony and Bismuth oxides. Russian Journal of Inorganic Chemistry, 42 (2), P. 182–186 (1997).Mittova I.Ya., Pshestanchik V.R., Kostryukov V.F. Alternating nonlinearity of the joint activating effect of binary mixtures of p-element oxides on the chemically activated thermal GaAs oxidation. Doklady Chemistry, 378 (4–6), P. 165–167 (2001).Mittova I.Ya., Pshestanchik V.R., Kostryukov V.F. Alternating nonlinearity of the joint activating effect of binary mixtures of p-element oxides on the chemically activated thermal GaAs oxidation. Doklady Chemistry, 378 (4–6), P. 165–167 (2001).Mittova I.Ya., Pshestanchik V.R., Kostryukov V.F., Donkareva I.A. Spatial localization of interactions between activating additives during chemostimulated thermal oxidation of GaAs. Doklady Chemistry, 386 (4–6), P. 258–260 (2002).Mittova I.Ya., Pshestanchik V.R., Kostryukov V.F., Donkareva I.A. Spatial localization of interactions between activating additives during chemostimulated thermal oxidation of GaAs. Doklady Chemistry, 386 (4–6), P. 258–260 (2002).Galachov F.Ya. Refractory oxide system state diagram. Science, Moscow, 1986, 353 p. (in Russian)Galachov F.Ya. Refractory oxide system state diagram. Science, Moscow, 1986, 353 p. (in Russian)Kazenas E.K., Tsvetkov Yu.V. Evaporation of oxides. Science, Moscow, 1997, 543 p. (in Russian).Kazenas E.K., Tsvetkov Yu.V. Evaporation of oxides. Science, Moscow, 1997, 543 p. (in Russian).

The authors declare that there are no conflicts of interest present.