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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">najo-1055</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>Influence of precursors variation on the morphology and electrochemical performance of NiSx thin films synthesized via the SILAR</article-title><trans-title-group xml:lang="ru"><trans-title>Влияние варьирования прекурсоров на морфологию и электрохимические характеристики тонких пленок NiSx, синтезированных с помощью метода SILAR</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-2816-7059</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Канева</surname><given-names>Мария Витальевна</given-names></name><name name-style="western" xml:lang="en"><surname>Kaneva</surname><given-names>Maria</given-names></name></name-alternatives><email xlink:type="simple">skt94@bk.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-7010-5209</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мелешко</surname><given-names>Александра Александровна</given-names></name><name name-style="western" xml:lang="en"><surname>Meleshko</surname><given-names>Alexandra</given-names></name></name-alternatives><email xlink:type="simple">alya_him@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-2003-0672</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Теневич</surname><given-names>Максим Игоревич</given-names></name><name name-style="western" xml:lang="en"><surname>Tenevich</surname><given-names>Maxim</given-names></name></name-alternatives><email xlink:type="simple">mtenevich@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-9633-4421</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Еникеева</surname><given-names>Мария Олеговна</given-names></name><name name-style="western" xml:lang="en"><surname>Enikeeva</surname><given-names>Maria</given-names></name></name-alternatives><email xlink:type="simple">enikeeva123@mail.ioffe.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кодинцев</surname><given-names>Илья Андреевич</given-names></name><name name-style="western" xml:lang="en"><surname>Kodintsev</surname><given-names>Ilya</given-names></name></name-alternatives><email xlink:type="simple">i.a.kod@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-5930-2087</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Лобинский</surname><given-names>Артем Анатольевич</given-names></name><name name-style="western" xml:lang="en"><surname>Lobinsky</surname><given-names>Artem</given-names></name></name-alternatives><email xlink:type="simple">lobinski.a@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Физико-Технический институт им. А.Ф. Иоффе РАН</institution></aff><aff xml:lang="en"><institution>Ioffe institute</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>05</day><month>02</month><year>2026</year></pub-date><volume>16</volume><issue>5</issue><elocation-id>1055</elocation-id><permissions><copyright-statement>Copyright &amp;#x00A9; Kaneva M., Meleshko A., Tenevich M., Enikeeva M., Kodintsev I., Lobinsky A., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Канева М.В., Мелешко А.А., Теневич М.И., Еникеева М.О., Кодинцев И.А., Лобинский А.А.</copyright-holder><copyright-holder xml:lang="en">Kaneva M., Meleshko A., Tenevich M., Enikeeva M., Kodintsev I., Lobinsky A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/1055">https://nanojournal.ifmo.ru/jour/article/view/1055</self-uri><abstract><p>In this work, nickel sulfide thin films were synthesized via the SILAR method using different nickel salts as precursors. The influence of the precursor salt on the morphology and electrochemical performance of the layers was systematically investigated. SEM analysis revealed that NiSx films prepared from nickel chloride exhibited the most uniform and crack-free morphology. Electrochemical measurements demonstrated a strong correlation between film quality and capacitive behaviour. Notably, the NiSx electrode synthesized using nickel chloride achieved a maximum specific capacitance of 1902 F/g at a current density of 1 A/g. These findings highlight the critical role of precursor selection in optimizing the structural and electrochemical properties of nickel sulfide electrodes for energy storage applications.</p></abstract><trans-abstract xml:lang="ru"><p>В данной работе тонкие пленки сульфида никеля были синтезированы методом SILAR с использованием различных солей никеля в качестве прекурсоров. Было систематически исследовано влияние соли-прекурсора на морфологию и электрохимические характеристики слоев. Анализ СЭМ показал, что пленки NiSx, полученные из хлорида никеля, демонстрируют наиболее однородную и свободную от трещин морфологию. Электрохимические измерения показали корреляцию между морфологией пленки и емкостными характеристиками. В частности, электрод на основе NiSx, синтезированный с использованием раствора соли хлорида никеля, показал максимальную удельную емкость, равную 1902 Ф/г при плотности тока 1 А/г. Полученные результаты подчеркивают решающую роль выбора прекурсора в оптимизации структурных и электрохимических свойств электродов на основе сульфида никеля для применения в устройствах хранения энергии.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>cульфид никеля</kwd><kwd>прекурсоры</kwd><kwd>тонкие пленки</kwd><kwd>SILAR</kwd><kwd>электрод</kwd><kwd>суперконденсатор</kwd></kwd-group><kwd-group xml:lang="en"><kwd>nickel sulfide</kwd><kwd>precursors</kwd><kwd>thin films</kwd><kwd>SILAR</kwd><kwd>electrode</kwd><kwd>supercapacitor</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">This work was supported by Russian Science Foundation (grant number 24-19-20060, https://rscf.ru/project/24-19-20060/) and St.Petersburg Science Foundation (agreement number 24-19-20060). The authors are very grateful to Dr. Dmitry Danilovich for their invaluable research assistance of FTIR spectroscopy. FTIR and SEM studies of the samples performed using devices of the Engineering Center of the St. Petersburg State Technological Institute (Technical University).</funding-statement><funding-statement xml:lang="en">This work was supported by Russian Science Foundation (grant number 24-19-20060, https://rscf.ru/project/24-19-20060/) and St.Petersburg Science Foundation (agreement number 24-19-20060). The authors are very grateful to Dr. Dmitry Danilovich for their invaluable research assistance of FTIR spectroscopy. FTIR and SEM studies of the samples performed using devices of the Engineering Center of the St. Petersburg State Technological Institute (Technical University).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Lakshmi K.C.S., Vedhanarayanan B. 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