<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">najo-1091</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>CHEMISTRY AND MATERIALS SCIENCE</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ХИМИЯ И НАУКА О МАТЕРИАЛАХ</subject></subj-group></article-categories><title-group><article-title>Electrical properties of hot wall deposited PbTe–SnTe thin films</article-title><trans-title-group xml:lang="ru"><trans-title></trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Ivanov</surname><given-names>V. A.</given-names></name></name-alternatives><bio xml:lang="en"><p>P. Brovka Street 19, 220072 Minsk.</p></bio><email xlink:type="simple">vasil@physics.by</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Gremenok</surname><given-names>V. F.</given-names></name></name-alternatives><bio xml:lang="en"><p>P. Brovka Street 19, 220072 Minsk.</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Seidi</surname><given-names>H. G.</given-names></name></name-alternatives><bio xml:lang="en"><p>P. Brovka Street 19, 220072 Minsk.</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Zimin</surname><given-names>S. P.</given-names></name></name-alternatives><bio xml:lang="en"><p>Sovetskaya Street 14, 150000 Yaroslavl.</p></bio><email xlink:type="simple">zimin@uniyar.ac.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Gorlachev</surname><given-names>E. S.</given-names></name></name-alternatives><bio xml:lang="en"><p>Sovetskaya Street 14, 150000 Yaroslavl.</p></bio><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>State Scientific and Production Association “Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus</institution><country>Belarus</country></aff><aff xml:lang="en" id="aff-2"><institution>Yaroslavl State University</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2013</year></pub-date><pub-date pub-type="epub"><day>17</day><month>08</month><year>2025</year></pub-date><volume>4</volume><issue>6</issue><fpage>816</fpage><lpage>822</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Ivanov V.A., Gremenok V.F., Seidi H.G., Zimin S.P., Gorlachev E.S., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Ivanov V.A., Gremenok V.F., Seidi H.G., Zimin S.P., Gorlachev E.S.</copyright-holder><copyright-holder xml:lang="en">Ivanov V.A., Gremenok V.F., Seidi H.G., Zimin S.P., Gorlachev E.S.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/1091">https://nanojournal.ifmo.ru/jour/article/view/1091</self-uri><abstract><p>Polycrystalline Pb1−xSnxTe (0.0 ≤ x ≤ 1.0) telluride alloys were synthesized by the direct fusion technique. Thin films of these materials were prepared by a hot wall deposition method on glass substrates at Tsub =230–330 ◦C and in a vacuum of about 10−5 Torr. The microstructure of the films was characterized by XRD, SEM, EDX and AES. The films showed a natural cubic structure. The thin films’ microstructure consisted of densely packed grains with dimensions of 50–300 nm and crystallite growth direction is perpendicular to substrate plane. The as-grown Pb1−xSnxTe films showed p-type conductivity. Thermoelectric measurements of the films showed high values for the room-temperature Seebeck coefficient ranging, from 20 to 400 µV·K−1, for SnTe to PbTe thin films, respectively. The conductivity of the films was in the range of 3·101–1·104 Ω−1·cm−1.</p></abstract><kwd-group xml:lang="en"><kwd>hot wall deposition</kwd><kwd>electrical properties</kwd><kwd>thin films</kwd></kwd-group><funding-group><funding-statement xml:lang="en">This work has been supported by Belarusian Republican Foundation for Fundamental Research and by Russian Foundation for Basic Research (grants 12-02-90029-Bel a, 13-0200381).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Goldsmith J.H. Thermoelectric refrigeration. Plenum New York, 2000, 281 p.</mixed-citation><mixed-citation xml:lang="en">Goldsmith J.H. Thermoelectric refrigeration. Plenum New York, 2000, 281 p.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Nishida I.A. Grain size effect on thermoelectric properties of PbTe prepared by spark plasma sintering. Material Japan, JIM, 35, P. 943–947 (1996).</mixed-citation><mixed-citation xml:lang="en">Nishida I.A. Grain size effect on thermoelectric properties of PbTe prepared by spark plasma sintering. Material Japan, JIM, 35, P. 943–947 (1996).</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Dimmock J.O. Meingailis I. Band structure and laser action in PbxSn1−xTe. Phys. Rev. Lett., 26, P. 1193–1197 (1966).</mixed-citation><mixed-citation xml:lang="en">Dimmock J.O. Meingailis I. Band structure and laser action in PbxSn1−xTe. Phys. Rev. Lett., 26, P. 1193–1197 (1966).</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Xing Gao, Murray S.D. Investigation of band inversion in (Pb,Sn)Te alloys using ab initio calculations. Physical Review B, 77, P. 033103 (2008).</mixed-citation><mixed-citation xml:lang="en">Xing Gao, Murray S.D. Investigation of band inversion in (Pb,Sn)Te alloys using ab initio calculations. Physical Review B, 77, P. 033103 (2008).</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Lopez O. Hot wall epitaxy. Thin Solid Films, 49, P. 3–7 (1978).</mixed-citation><mixed-citation xml:lang="en">Lopez O. Hot wall epitaxy. Thin Solid Films, 49, P. 3–7 (1978).</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">Schikora D., Sitter H., J. Humenberger J. High quality CdTe epilayers on GaAs grown by hot wall epitaxy. Appl. Phys. Lett., 48, P. 1276–1279 (1986).</mixed-citation><mixed-citation xml:lang="en">Schikora D., Sitter H., J. Humenberger J. High quality CdTe epilayers on GaAs grown by hot wall epitaxy. Appl. Phys. Lett., 48, P. 1276–1279 (1986).</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Pal A.K., Mondal A., Chaudhuri S. Preparation and characterization of ZnTe/CdSe solar cells. Vacuum, 41, P. 1460–1463 (1990).</mixed-citation><mixed-citation xml:lang="en">Pal A.K., Mondal A., Chaudhuri S. Preparation and characterization of ZnTe/CdSe solar cells. Vacuum, 41, P. 1460–1463 (1990).</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">Seto S., Yamada S., Suzuki K. Growth kinetics and structural characterization of polycrystalline CdTe films grown by hot-wall vacuum evaporation. Solar Energy Materials and Solar Cells, 50, P. 133–137 (1998).</mixed-citation><mixed-citation xml:lang="en">Seto S., Yamada S., Suzuki K. Growth kinetics and structural characterization of polycrystalline CdTe films grown by hot-wall vacuum evaporation. Solar Energy Materials and Solar Cells, 50, P. 133–137 (1998).</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">Muthukumarasamy N., Balasundaraprabhu R., Jayakumar S., Kannan M.D. Photoconductive properties of hot wall deposited CdSe0.6Te0.4 thin films. Materials Science and Engineering B, 137, P. 1–3 (2007).</mixed-citation><mixed-citation xml:lang="en">Muthukumarasamy N., Balasundaraprabhu R., Jayakumar S., Kannan M.D. Photoconductive properties of hot wall deposited CdSe0.6Te0.4 thin films. Materials Science and Engineering B, 137, P. 1–3 (2007).</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">Bashkirov S.A., Lazenka V.V., Gremenok V.F., Bente K. Microstructure of SnS thin films obtained by hot wall vacuum deposition method. J. Adv. Microsc. Res., 6, P. 153–156 (2011).</mixed-citation><mixed-citation xml:lang="en">Bashkirov S.A., Lazenka V.V., Gremenok V.F., Bente K. Microstructure of SnS thin films obtained by hot wall vacuum deposition method. J. Adv. Microsc. Res., 6, P. 153–156 (2011).</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">Bashkirov S.A., Gremenok V.F., et al. Tin sulfide thin films and ZnO/n-CdS/p-SnS/Mo heterojunctions for photovoltaic applications. Thin Solid Films, 520, P. 5807–5810 (2012).</mixed-citation><mixed-citation xml:lang="en">Bashkirov S.A., Gremenok V.F., et al. Tin sulfide thin films and ZnO/n-CdS/p-SnS/Mo heterojunctions for photovoltaic applications. Thin Solid Films, 520, P. 5807–5810 (2012).</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">Schaffler R., Klose M., Schock H.W. Pulsed laser deposition and characterization of CuInSe thin films for solar cell applications. Materials Science Forum Vois., 173, P. 135–138 (1995).</mixed-citation><mixed-citation xml:lang="en">Schaffler R., Klose M., Schock H.W. Pulsed laser deposition and characterization of CuInSe thin films for solar cell applications. Materials Science Forum Vois., 173, P. 135–138 (1995).</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">Farinre T.O., Zemel J.N. Preparation and properties of Pb1−xSnxTe epitaxial films. J. Vacuum Sci. Technology, 7, P. 121–123 (1970).</mixed-citation><mixed-citation xml:lang="en">Farinre T.O., Zemel J.N. Preparation and properties of Pb1−xSnxTe epitaxial films. J. Vacuum Sci. Technology, 7, P. 121–123 (1970).</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
