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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2016-7-4-583-591</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-1239</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>Optical properties of sodium niobate thin films</article-title><trans-title-group xml:lang="ru"><trans-title>Optical properties of sodium niobate thin films</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Lingwal</surname><given-names>V.</given-names></name><name name-style="western" xml:lang="en"><surname>Lingwal</surname><given-names>V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Uttarakhand, 249 201</p></bio><bio xml:lang="en"><p>Uttarakhand, 249 201</p></bio><email xlink:type="simple">lingwalv@yahoo.co.in</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Kandari</surname><given-names>A. I.</given-names></name></name-alternatives><bio xml:lang="en"><p>USIC</p><p>Srinagar (Garhwal), Uttarakhand, 246 174</p></bio><email xlink:type="simple">kandarialok@gmail.com</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Panwar</surname><given-names>N. S.</given-names></name></name-alternatives><bio xml:lang="en"><p>USIC</p><p>Srinagar (Garhwal), Uttarakhand, 246 174</p></bio><email xlink:type="simple">nspusic@gmail.com</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Pt. L.M.S. Govt. PG College Rishikesh</institution></aff><aff xml:lang="en"><institution>Pt. L.M.S. Govt. PG College Rishikesh</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>HNB Garhwal University</institution></aff><aff xml:lang="en"><institution>HNB Garhwal University</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2016</year></pub-date><pub-date pub-type="epub"><day>22</day><month>08</month><year>2025</year></pub-date><volume>7</volume><issue>4</issue><fpage>583</fpage><lpage>591</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Lingwal V., Kandari A.I., Panwar N.S., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Lingwal V., Kandari A.I., Panwar N.S.</copyright-holder><copyright-holder xml:lang="en">Lingwal V., Kandari A.I., Panwar N.S.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/1239">https://nanojournal.ifmo.ru/jour/article/view/1239</self-uri><abstract><p>NaNbO3 thin films were deposited under different conditions by rf magnetron sputtering of ceramic target. Spectral transmission of the deposited films was measured in the UV-Visible-near IR range. Films deposited at 300 °C showed more absorption, and films annealed at 300 °C showed less absorption than those deposited at room temperature (RT), which was found to be consistent with their X-ray diffraction (XRD) patterns. From the observed transmission spectra, refractive index, optical band gap, absorption coefficient, extinction coefficient and film thickness were calculated for the deposited films. Refractive index at 550 nm wavelength was found to be 2.11, 2.01 and 2.34 for the films deposited at RT, 300 °C and annealed at 300 °C, respectively. The refractive index was found to be almost constant with respect to frequency for the films annealed at 300 °C. Optical band gap was found 3.82, 3.7 and 3.81 eV for the films deposited at RT, 300 °C, and annealed at 300 °C, respectively. Film thickness was shown to decrease with annealing. Absorption and extinction coefficients decreased with increasing wavelength, in all the samples. Band gaps associated with different interactions have been calculated for the deposited films. Phonon assisted indirect forbidden transition was most favorable in the deposited films.</p></abstract><trans-abstract xml:lang="ru"><p>NaNbO3 thin films were deposited under different conditions by rf magnetron sputtering of ceramic target. Spectral transmission of the deposited films was measured in the UV-Visible-near IR range. Films deposited at 300 °C showed more absorption, and films annealed at 300 °C showed less absorption than those deposited at room temperature (RT), which was found to be consistent with their X-ray diffraction (XRD) patterns. From the observed transmission spectra, refractive index, optical band gap, absorption coefficient, extinction coefficient and film thickness were calculated for the deposited films. Refractive index at 550 nm wavelength was found to be 2.11, 2.01 and 2.34 for the films deposited at RT, 300 °C and annealed at 300 °C, respectively. The refractive index was found to be almost constant with respect to frequency for the films annealed at 300 °C. Optical band gap was found 3.82, 3.7 and 3.81 eV for the films deposited at RT, 300 °C, and annealed at 300 °C, respectively. Film thickness was shown to decrease with annealing. Absorption and extinction coefficients decreased with increasing wavelength, in all the samples. Band gaps associated with different interactions have been calculated for the deposited films. Phonon assisted indirect forbidden transition was most favorable in the deposited films.</p></trans-abstract><kwd-group xml:lang="en"><kwd>ferroelectrics</kwd><kwd>antiferroelectrics</kwd><kwd>thin films</kwd><kwd>sputtering</kwd><kwd>transmission</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Gunther P. Nonlinear optical crystals for optical frequency doubling with laser diodes. Proc. SPIE, 1981, 236, P. 8–19.</mixed-citation><mixed-citation xml:lang="en">Gunther P. Nonlinear optical crystals for optical frequency doubling with laser diodes. Proc. SPIE, 1981, 236, P. 8–19.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Okuyama M., Matsui Y., Nakano H., Hamakawa Y. PbTiO3 ferroelectric thin film gate fet for infrared detection. 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