najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2016-7-4-629-632najo-1274Research ArticleСтатьиPreparation and characterization of porous silicon photoelectrode for dye sensitized solar cellsPreparation and characterization of porous silicon photoelectrode for dye sensitized solar cellsGangadeviK.GangadeviK.

Department of Physics

Madurai–625009

Department of Physics

Madurai–625009

kdevi.ganga@gmail.comRamachandranK.RamachandranK.

School of Physics

Madurai–625021

School of Physics

Madurai–625021

thirumalchandran@gmail.comSrinivasanR.SrinivasanR.

Department of Physics

Madurai–625009

Department of Physics

Madurai–625009

rsrini2067@yahoo.co.inThiagarajar CollegeThiagarajar CollegeMadurai Kamaraj UniversityMadurai Kamaraj University20162208202574629632Copyright © Gangadevi K., Ramachandran K., Srinivasan R., 20252025Gangadevi K., Ramachandran K., Srinivasan R.Gangadevi K., Ramachandran K., Srinivasan R.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/1274

Nanostructured porous silicon (PS) samples were prepared by electrochemical anodic dissolution of doped silicon (p-Si) of (100) orientation at constant current density of 30 mA/cm2 for different etching times 10 and 60 min. The samples were characterized by XRD and SEM. The particle size was calculated from XRD using Scherrer’s approximation are in the range of 12 to 61 nm and the SEM images confirmed the difference in porosities of the sample. The samples were sensitized with chloroaluminium phthalocyanine (ClAlPc) to fabricate Dye-sensitized solar cells (DSSCs). The bandgaps from UV- Vis and photoluminescence measurements are in the range of 1.5 to 1.8 eV. The photocurrent and photovoltage of the cells were measured using Keithely source meter. The maximum conversion efficiency of 2.8% is observed and results are discussed.

Nanostructured porous silicon (PS) samples were prepared by electrochemical anodic dissolution of doped silicon (p-Si) of (100) orientation at constant current density of 30 mA/cm2 for different etching times 10 and 60 min. The samples were characterized by XRD and SEM. The particle size was calculated from XRD using Scherrer’s approximation are in the range of 12 to 61 nm and the SEM images confirmed the difference in porosities of the sample. The samples were sensitized with chloroaluminium phthalocyanine (ClAlPc) to fabricate Dye-sensitized solar cells (DSSCs). The bandgaps from UV- Vis and photoluminescence measurements are in the range of 1.5 to 1.8 eV. The photocurrent and photovoltage of the cells were measured using Keithely source meter. The maximum conversion efficiency of 2.8% is observed and results are discussed.

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The authors declare that there are no conflicts of interest present.