najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМОnajo-1276Research ArticleCONTRIBUTED TALKSCONTRIBUTED TALKSHysteresis of conductivity in the granular silver filmsGladskikhI. A.

49 Kronverkskiy, Saint Petersburg, 197101

138020@mail.ruLeonovN. B.

 49 Kronverkskiy, Saint Petersburg, 197101, 

Przhibel’skiiS. G.

49 Kronverkskiy, Saint Petersburg, 197101

VartanyanT. A.

49 Kronverkskiy, Saint Petersburg, 197101

Saint Petersburg National Research University of Information Technologies, Mechanics and OpticsRussian Federation20132008202544Special Issue. INTERNATIONAL CONFERENCE "MATHEMATICAL CHALLENGE OF QUANTUM TRANSPORT IN NANOSYSTEMS - 2013. PIERRE DUCLOS WORKSHOP"524528Copyright © Gladskikh I.A., Leonov N.B., Przhibel’skii S.G., Vartanyan T.A., 20252025Gladskikh I.A., Leonov N.B., Przhibel’skii S.G., Vartanyan T.A.Gladskikh I.A., Leonov N.B., Przhibel’skii S.G., Vartanyan T.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/1276

The electrical properties of the granular silver films located on a surface of sapphire substrates are experimentally investigated during deposition and thermal annealing. The strong influence of surface-based silver atom diffusion on film formation is revealed, both during and after deposition. The effect of resistance switching in the films of the various thicknesses close to the percolation threshold, depending on the applied voltage is found and investigated. These sharp changes of resistance of 5–7 orders can be reversible or irreversible, depending on film thickness.

granular metal filmsmetal nanoparticlesresistance switchingReferencesD.S. Herman, T.N. Rodin. Electrical conduction between metallic microparticles. J. Appl. Phys., 37, P. 1594-1601 (1966).D.S. Herman, T.N. Rodin. Electrical conduction between metallic microparticles. J. Appl. Phys., 37, P. 1594-1601 (1966).E.V. Vashchenko, I.A. Gladskikh, et al. Conductivity and photoconductivity of granular silver films on sapphire substrates. J. Optical Technology, 80 (5), P. 3–10 (2013).E.V. Vashchenko, I.A. Gladskikh, et al. Conductivity and photoconductivity of granular silver films on sapphire substrates. J. Optical Technology, 80 (5), P. 3–10 (2013).C.A. Neugebauer, M.N Web. Electrical conduction mechanism in ultrathin, evaporated metal films. J. of Appl. Phys., 33, P. 74–82 (1962).C.A. Neugebauer, M.N Web. Electrical conduction mechanism in ultrathin, evaporated metal films. J. of Appl. Phys., 33, P. 74–82 (1962).R.M. Hill. Electrical conduction in discontinuous metal films. Contemp. Phys., 10 (3), P. 221–240 (1969).R.M. Hill. Electrical conduction in discontinuous metal films. Contemp. Phys., 10 (3), P. 221–240 (1969).N.J. Simrick, J.A. Kilner, A. Atkinson. Thermal stability of silver thin films on zirconia substrates. Thin Solid Films, 520, P. 2855–2867 (2012).N.J. Simrick, J.A. Kilner, A. Atkinson. Thermal stability of silver thin films on zirconia substrates. Thin Solid Films, 520, P. 2855–2867 (2012).J. Dufourcq, P. Mur, et al. Metallic nano-crystals for flash memories. Materials Science and Engineering C, 27, P. 1496–1499 (2007).J. Dufourcq, P. Mur, et al. Metallic nano-crystals for flash memories. Materials Science and Engineering C, 27, P. 1496–1499 (2007).A. Kiesow, J.E. Morris, C. Radehaus, A. Heilmann. Switching behavior of plasma polymer films containing silver nanoparticles. J. Appl. Phys., 94 (10), P. 6988–6990 (2003).A. Kiesow, J.E. Morris, C. Radehaus, A. Heilmann. Switching behavior of plasma polymer films containing silver nanoparticles. J. Appl. Phys., 94 (10), P. 6988–6990 (2003).O. Baker, B. Shedd, et al. Size Control of Gold Nanoparticles Grown on Polyaniline Nanofibers for Bistable Memory Devices. ACS NANO, 5 (5), P. 3469–3474 (2011).O. Baker, B. Shedd, et al. Size Control of Gold Nanoparticles Grown on Polyaniline Nanofibers for Bistable Memory Devices. ACS NANO, 5 (5), P. 3469–3474 (2011).K. Fujiwara, T. Nemoto, et al. Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices. Jpn. J. Appl. Phys., 47 (8), P. 6266–6271 (2008)K. Fujiwara, T. Nemoto, et al. Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices. Jpn. J. Appl. Phys., 47 (8), P. 6266–6271 (2008)

The authors declare that there are no conflicts of interest present.