najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2016-7-4-643-646najo-1289Research ArticleСтатьиBistable electrical switching and performance of a pentacene-based write once/read many memory deviceBistable electrical switching and performance of a pentacene-based write once/read many memory deviceGayathriA. G.GayathriA. G.

Department of Physics

Shavige malleswara Hills, Kumaraswamy layout, Bangalore-560076

Department of Physics

Shavige malleswara Hills, Kumaraswamy layout, Bangalore-560076

gaythri305@yahoo.comJosephC. M.JosephC. M.

Department of Physics

Shavige malleswara Hills, Kumaraswamy layout, Bangalore-560076

Department of Physics

Shavige malleswara Hills, Kumaraswamy layout, Bangalore-560076

cmjoseph@rediffmail.comDayananda Sagar College of EnggDayananda Sagar College of Engg20162208202574643646Copyright © Gayathri A.G., Joseph C.M., 20252025Gayathri A.G., Joseph C.M.Gayathri A.G., Joseph C.M.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/1289

In this paper, the performance of a pentacene-based write once/read many memory device is reported.  The IV characteristics of a pentacene device deposited at 5 A˚ /s on an ITO-coated glass substrate was studied. This device showed a stable switching from ON to OFF state with an ON-OFF current ratio of nearly 103 and a retention time of 5 × 104 s with a switching threshold voltage of 3.9 V. The irreversible switching of this device makes it suitable for write once/read many memory devices.  The structural studies of pentacene thin films on glass substrate were also done and the dependence of device performance on grain size is reported. Improved performance of this device due to the addition of C60 layer is also discussed.

In this paper, the performance of a pentacene-based write once/read many memory device is reported.  The IV characteristics of a pentacene device deposited at 5 A˚ /s on an ITO-coated glass substrate was studied. This device showed a stable switching from ON to OFF state with an ON-OFF current ratio of nearly 103 and a retention time of 5 × 104 s with a switching threshold voltage of 3.9 V. The irreversible switching of this device makes it suitable for write once/read many memory devices.  The structural studies of pentacene thin films on glass substrate were also done and the dependence of device performance on grain size is reported. Improved performance of this device due to the addition of C60 layer is also discussed.

organic semiconductorpentacenethin filmsvacuum thermal evaporationWORM memoryorganic semiconductorpentacenethin filmsvacuum thermal evaporationWORM memoryFinancial support by Visvesvaraya Technological University (VTU), Belgaum, Karnataka, India through a grant is gratefully acknowledged. Financial support by Vision Group on Science and Technology (VGST), Department of Information Technology, Biotechnology & Science and Technology, Government of Karnataka, India through a CISE grant is also acknowledged.Financial support by Visvesvaraya Technological University (VTU), Belgaum, Karnataka, India through a grant is gratefully acknowledged. Financial support by Vision Group on Science and Technology (VGST), Department of Information Technology, Biotechnology & Science and Technology, Government of Karnataka, India through a CISE grant is also acknowledged.ReferencesMa L., Xu Q., Yang Y. Organic non-volatile memory by controlling the dynamic copper-ion concentration within organic layer. 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The authors declare that there are no conflicts of interest present.