najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2016-7-3-523-527najo-1291Research ArticlePAPERS, PRESENTED AT NANO-2015PAPERS, PRESENTED AT NANO-2015Chemosynthesis, characterization and PEC performance of CdZn(SSe)2 thin films by arrested precipitation technique (APT)Chemosynthesis, characterization and PEC performance of CdZn(SSe)2 thin films by arrested precipitation technique (APT)JagadaleS. K.JagadaleS. K.

Kolhapur-416004

Kolhapur-416004

ShindeD. B.ShindeD. B.

Kolhapur-416004

Kolhapur-416004

ManeR. М.ManeR. M.

Kolhapur-416004

Kolhapur-416004

KhotK. V.KhotK. V.

Kolhapur-416004

Kolhapur-416004

GhanwatV. B.GhanwatV. B.

Kolhapur-416004

Kolhapur-416004

BhosaleP. N.BhosaleP. N.

Kolhapur-416004

Kolhapur-416004

p.n.bhosale@rediffmail.comManeR. K.ManeR. K.

Kolhapur-416004

Kolhapur-416004

rmane.1970@gmail.comMaterials Research Laboratory, Department of Chemistry, Shivaji UniversityMaterials Research Laboratory, Department of Chemistry, Shivaji University20162008202573523527Copyright © Jagadale S.K., Shinde D.B., Mane R.M., Khot K.V., Ghanwat V.B., Bhosale P.N., Mane R.K., 20252025Jagadale S.K., Shinde D.B., Mane R.М., Khot K.V., Ghanwat V.B., Bhosale P.N., Mane R.K.Jagadale S.K., Shinde D.B., Mane R.M., Khot K.V., Ghanwat V.B., Bhosale P.N., Mane R.K.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/1291

In the present work, we have used simple, cost effective arrested precipitation technique (APT) to deposit CdZn(SSe)2 thin films. Preparative conditions were optimized during the initial stage of experimentation to obtain good quality CdZn(SSe)2 thin films. The as-deposited film was studied for its structural, morphological, optical, and compositional analysis by XRD, SEM, UV-Vis-NIR spectrophotometer and EDSanalysis techniques respectively. XRD analysis revealed that the film was polycrystalline in nature and exhibit hexagonal crystal structure. The SEM micrograph shows the formation of spherical surface morphology. EDS results confirm the presence of Cd, Zn, S and Se elements in the synthesized thin film. The band gap value of thin film was calculated from the absorption spectra which is found to be 1.8 eV. From J–V measurements, photo-conversion efficiency is found to be 0.07%.

In the present work, we have used simple, cost effective arrested precipitation technique (APT) to deposit CdZn(SSe)2 thin films. Preparative conditions were optimized during the initial stage of experimentation to obtain good quality CdZn(SSe)2 thin films. The as-deposited film was studied for its structural, morphological, optical, and compositional analysis by XRD, SEM, UV-Vis-NIR spectrophotometer and EDSanalysis techniques respectively. XRD analysis revealed that the film was polycrystalline in nature and exhibit hexagonal crystal structure. The SEM micrograph shows the formation of spherical surface morphology. EDS results confirm the presence of Cd, Zn, S and Se elements in the synthesized thin film. The band gap value of thin film was calculated from the absorption spectra which is found to be 1.8 eV. From J–V measurements, photo-conversion efficiency is found to be 0.07%.

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The authors declare that there are no conflicts of interest present.