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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2016-7-3-547-552</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-1314</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PAPERS, PRESENTED AT NANO-2015</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>PAPERS, PRESENTED AT NANO-2015</subject></subj-group></article-categories><title-group><article-title>Annealing effects on V2O5-x thin films deposited by non reactive sputtering</article-title><trans-title-group xml:lang="ru"><trans-title>Annealing effects on V2O5-x thin films deposited by non reactive sputtering</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Malini</surname><given-names>D. Rachel</given-names></name><name name-style="western" xml:lang="en"><surname>Malini</surname><given-names>D. Rachel</given-names></name></name-alternatives><bio xml:lang="ru"><p>Department of Physics</p><p>Madurai-625002</p></bio><bio xml:lang="en"><p>Department of Physics</p><p>Madurai-625002</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Sivakumar</surname><given-names>R.</given-names></name><name name-style="western" xml:lang="en"><surname>Sivakumar</surname><given-names>R.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Karaikudi-630004</p></bio><bio xml:lang="en"><p>Karaikudi-630004</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Sanjeeviraja</surname><given-names>С.</given-names></name><name name-style="western" xml:lang="en"><surname>Sanjeeviraja</surname><given-names>C.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Department of Physics</p><p>Karaikudi-630004</p></bio><bio xml:lang="en"><p>Department of Physics</p><p>Karaikudi-630004</p></bio><email xlink:type="simple">sanjeeviraja@rediffmail.com</email><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>The American College</institution></aff><aff xml:lang="en"><institution>The American College</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Directorate of Distance Education, Alagappa University</institution></aff><aff xml:lang="en"><institution>Directorate of Distance Education, Alagappa University</institution></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>A.C. College of Engg. &amp; Tech</institution></aff><aff xml:lang="en"><institution>A.C. College of Engg. &amp; Tech</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2016</year></pub-date><pub-date pub-type="epub"><day>20</day><month>08</month><year>2025</year></pub-date><volume>7</volume><issue>3</issue><fpage>547</fpage><lpage>552</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Malini D., Sivakumar R., Sanjeeviraja C., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Malini D., Sivakumar R., Sanjeeviraja С.</copyright-holder><copyright-holder xml:lang="en">Malini D., Sivakumar R., Sanjeeviraja C.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/1314">https://nanojournal.ifmo.ru/jour/article/view/1314</self-uri><abstract><p>Thin films of vanadium oxide (V2O5−x) were prepared by rf magnetron sputtering process and are heat treated to study the annealing effect. As-deposited thin films are amorphous in nature and crystallinity is improved by annealing the sample. Thin layers with high density and small grain size varying from 36 nm to 70 nm were seen in the FESEM images of as-deposited thin films. In the case of annealed thin films, it has been transformed to thin elongated rod like structure with 202.5 nm length and an average diameter of approximately 48 nm. Optical properties were studied by using UV-Vis-NIR spectrophotometer and the reduction in transmission in annealed thin films is due to the crystalline nature of thin films. Studies were done on the samples by taking photoluminescence and Laser Raman spectra.</p></abstract><trans-abstract xml:lang="ru"><p>Thin films of vanadium oxide (V2O5−x) were prepared by rf magnetron sputtering process and are heat treated to study the annealing effect. As-deposited thin films are amorphous in nature and crystallinity is improved by annealing the sample. Thin layers with high density and small grain size varying from 36 nm to 70 nm were seen in the FESEM images of as-deposited thin films. In the case of annealed thin films, it has been transformed to thin elongated rod like structure with 202.5 nm length and an average diameter of approximately 48 nm. Optical properties were studied by using UV-Vis-NIR spectrophotometer and the reduction in transmission in annealed thin films is due to the crystalline nature of thin films. Studies were done on the samples by taking photoluminescence and Laser Raman spectra.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>vanadium oxide</kwd><kwd>rf magnetron sputtering</kwd><kwd>annealing</kwd></kwd-group><kwd-group xml:lang="en"><kwd>vanadium oxide</kwd><kwd>rf magnetron sputtering</kwd><kwd>annealing</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Rajendra Kumar R.T., Karunagaran B., et al. Structural properties of V2O5 thin films prepared by vacuum evaporation, Mat. Sci. Semicon. Proc., 2003, 6, P. 543–546.</mixed-citation><mixed-citation xml:lang="en">Rajendra Kumar R.T., Karunagaran B., et al. Structural properties of V2O5 thin films prepared by vacuum evaporation, Mat. Sci. Semicon. 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