najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2016-7-3-565-568najo-1328Research ArticlePAPERS, PRESENTED AT NANO-2015PAPERS, PRESENTED AT NANO-2015Observation of insulating and metallic-type behavior in Bi2Se3 transistor at room temperatureObservation of insulating and metallic-type behavior in Bi2Se3 transistor at room temperatureGunasekaranV.GunasekaranV.

2-1-1, Katahira, Aoba-ku, Sendai 980-8577

2-1-1, Katahira, Aoba-ku, Sendai 980-8577

guna@riec.tohoku.ac.jpParkG. H.ParkG. H.

2-1-1, Katahira, Aoba-ku, Sendai 980-8577

2-1-1, Katahira, Aoba-ku, Sendai 980-8577

KimK. S.KimK. S.

2-1-1, Katahira, Aoba-ku, Sendai 980-8577

2-1-1, Katahira, Aoba-ku, Sendai 980-8577

SuemitsuМ.SuemitsuM.

2-1-1, Katahira, Aoba-ku, Sendai 980-8577

2-1-1, Katahira, Aoba-ku, Sendai 980-8577

FukidomeH.FukidomeH.

2-1-1, Katahira, Aoba-ku, Sendai 980-8577

2-1-1, Katahira, Aoba-ku, Sendai 980-8577

fukidome@riec.tohoku.ac.jpResearch Institute of Electrical Communication, Tohoku UniversityResearch Institute of Electrical Communication, Tohoku University20162008202573565568Copyright © Gunasekaran V., Park G.H., Kim K.S., Suemitsu M., Fukidome H., 20252025Gunasekaran V., Park G.H., Kim K.S., Suemitsu М., Fukidome H.Gunasekaran V., Park G.H., Kim K.S., Suemitsu M., Fukidome H.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/1328

Topological insulators are a new class of electronic materials with promising device applications. In this work, multi-layer Bi2Se3 field effect transistors (FETs) are prepared by standard lithography followed by mechanical exfoliation method. Electrical characterization of the FET has been studied at room temperature. We observed both insulating and metallic-type transport behavior when device was gate-biased. Electron-phonon scattering plays a vital role in observing this behavior. We assume that this sort of behavior could be raised from the inherent metallic surface and semiconducting interior bulk properties of Bi2Se3.

Topological insulators are a new class of electronic materials with promising device applications. In this work, multi-layer Bi2Se3 field effect transistors (FETs) are prepared by standard lithography followed by mechanical exfoliation method. Electrical characterization of the FET has been studied at room temperature. We observed both insulating and metallic-type transport behavior when device was gate-biased. Electron-phonon scattering plays a vital role in observing this behavior. We assume that this sort of behavior could be raised from the inherent metallic surface and semiconducting interior bulk properties of Bi2Se3.

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The authors declare that there are no conflicts of interest present.