najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2023-14-4-438-446najo-134Research ArticlePHYSICSФИЗИКАTransport properties of GaAs Co-doped H-passivated low-buckled and high-buckled zigzag silicene nanoribbon two probe devicesТранспортные свойства зигзагообразных силиценовых нанолент с низким и высоким изгибом, легированных кобальтом GaAs, пассивированных H-двухзондовыми устройствамиНакашА. Н.NaqashA. N.

Asma N. Naqash – Department of Nanotechnology and Department of Electronics and Instrumentation Technology, University of Kashmir

Srinagar, Jammu and Kashmir – 190006

https://orcid.org/0000-0002-2694-4515ШахХуршед А.ShahK. A.

Khurshed A. Shah – Department of Nanotechnology, University of Kashmir; Postgraduate Department of Physics, S. P. College, Cluster University Srinagar

Srinagar, Jammu and Kashmir – 190006; Jammu and Kashmir – 190001

drkhursheda@gmail.comhttps://orcid.org/0000-0003-3113-3802ШейхДж.SheikhJ. A.

Javid Ahmad Sheikh – Department of Electronics and Instrumentation Technology, University of Kashmir

Srinagar, Jammu and Kashmir – 190006

КумбханиБ.KumbhaniB.

Brijesh Kumbhani – Department of Electrical Engineering

Indian Institute of Technology Ropar, Punjab – 140001

АндрабиС.М.А.AndrabiS.M.A.

Syed Muzaffar Ali Andrabi – Department of Applied Sciences, Institute of Technology, Zakura Campus, University of Kashmir

Srinagar, Jammu and Kashmir – 190006

Department of Nanotechnology, University of Kashmir; Department of Electronics and Instrumentation Technology, University of KashmirIndiaDepartment of Nanotechnology, University of Kashmir; Postgraduate Department of Physics, S. P. College, Cluster University SrinagarIndiaDepartment of Electronics and Instrumentation Technology, University of KashmirIndiaDepartment of Electrical Engineering, Indian Institute of Technology RoparIndiaDepartment of Applied Sciences, Institute of Technology, Zakura Campus, University of KashmirRussian Federation202303062025144438446Copyright © Naqash A.N., Shah K.A., Sheikh J.A., Kumbhani B., Andrabi S., 20252025Накаш А.Н., Шах Х.А., Шейх Д., Кумбхани Б., Андраби С.Naqash A.N., Shah K.A., Sheikh J.A., Kumbhani B., Andrabi S.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/134

In this study, we have investigated the transport properties of low bucked (LB) and high buckled (HB) silicene based two probe devices such as I–V characteristics, conductance, transmission spectrum and projected device density of states. Firstly, we have opened a bandgap in both LB and HB zigzag silicene nanoribbon (ZSiNR) by hydrogen passivation and simulated for their transport properties. Further, we have doped the LB and HB ZSiNR structures by gallium (Ga) and arsenide (As) atoms in order to determine their changes in the transport properties. The results show that 4 atom width silicene nanoribbon shows a maximum band gap of 2.76 and 2.72 A for LB-ZSiNR and HB-ZSiNR, respectively. The 2 atom doped ZSiNR shows good ˚ transport characteristics in the voltage range of 0.5 to 1.5 V in comparison with 4 and 6 atom doped models. The obtained results were validated by calculating the transmission spectrum and projected device density of states. It is believed that the modelled devices will find number of futuristic applications in the electronic industry. 

В этом исследовании мы изучали транспортные свойства двухзондовых устройств на основе силицена с низким сопротивлением (LB) и высоким сопротивлением (HB), такие как ВАХ, проводимость, спектр пропускания и прогнозируемая плотность состояний устройства. Во-первых, мы открыли запрещенную зону в зигзагообразных силиценовых нанолентах LB и HB (ZSiNR) путем водородной пассивации и смоделировали их транспортные свойства. Далее мы легировали структуры LB и HB ZSiNR атомами галлия (Ga) и арсенида (As) с целью определения изменения их транспортных свойств. Результаты показывают, что силиценовая нанолента шириной 4 атома имеет максимальную ширину запрещенной зоны 2,76 Å и 2,72 Å для LB-ZSiNR и HB-ZSiNR соответственно. ZSiNR, легированный 2 атомами, показывает хорошие транспортные характеристики в диапазоне напряжений от 0,5 В до 1,5 В по сравнению с моделями, легированными 4 и 6 атомами. Полученные результаты были подтверждены путем расчета спектра пропускания и прогнозируемой плотности состояний устройства. Считается, что смоделированные устройства найдут ряд футуристических применений в электронной промышленности.

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The authors declare that there are no conflicts of interest present.