najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2016-7-4-765-767najo-1358Research ArticleСтатьиSurfactant assisted synthesis of nanocrystalline n-Bi2Se3 thin films at room temperature via arrested precipitation techniqueSurfactant assisted synthesis of nanocrystalline n-Bi2Se3 thin films at room temperature via arrested precipitation techniqueDesaiN. D.DesaiN. D.

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004

PatilS. M.PatilS. M.

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004

KhotK. V.KhotK. V.

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004

ManeR. M.ManeR. M.

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004

BhosaleP. N.BhosaleP. N.

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004

pnbhosale@rediffmail.comShivaji UniversityИндияShivaji UniversityIndia20162208202574765767Copyright © Desai N.D., Patil S.M., Khot K.V., Mane R.M., Bhosale P.N., 20252025Desai N.D., Patil S.M., Khot K.V., Mane R.M., Bhosale P.N.Desai N.D., Patil S.M., Khot K.V., Mane R.M., Bhosale P.N.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/1358

In the present investigation, we have successfully synthesized nanocrystalline bismuth selenide (Bi2Se3) thin films using an arrested precipitation technique at room temperature. The optostructural, morphological, compositional and photoeletrochemical properties were studied for Bi2Se3 thin films prepared via surfactant-assisted synthesis. The optical study reveals the presence of direct allowed transition with band gap energy ranging from 1.40–1.80 eV. The X-ray diffraction (XRD) pattern confirms rhombohedral crystal structure. Scanning electron microscopy study shows the morphological transition from an interconnected mesh to nanosphere-like morphology and finally, lamellar sphere. Atomic force microscopy (AFM) study carried out to determine surface roughness and surface topography of thin films. Energy dispersive spectroscopy (EDS) analysis reveals the presence and ratio of elemental bismuth and selenium. Finally, the photoelectrochemical (PEC) performance of all the as-synthesized thin films were carried out using iodide-polyiodide redox couple.

In the present investigation, we have successfully synthesized nanocrystalline bismuth selenide (Bi2Se3) thin films using an arrested precipitation technique at room temperature. The optostructural, morphological, compositional and photoeletrochemical properties were studied for Bi2Se3 thin films prepared via surfactant-assisted synthesis. The optical study reveals the presence of direct allowed transition with band gap energy ranging from 1.40–1.80 eV. The X-ray diffraction (XRD) pattern confirms rhombohedral crystal structure. Scanning electron microscopy study shows the morphological transition from an interconnected mesh to nanosphere-like morphology and finally, lamellar sphere. Atomic force microscopy (AFM) study carried out to determine surface roughness and surface topography of thin films. Energy dispersive spectroscopy (EDS) analysis reveals the presence and ratio of elemental bismuth and selenium. Finally, the photoelectrochemical (PEC) performance of all the as-synthesized thin films were carried out using iodide-polyiodide redox couple.

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The authors declare that there are no conflicts of interest present.