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<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2018-9-1-76-78</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-1403</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>The memristive behavior of non-uniform strained carbon nanotubes</article-title><trans-title-group xml:lang="ru"><trans-title></trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Il’ina</surname><given-names>M. V.</given-names></name></name-alternatives><bio xml:lang="en"><p>Taganrog</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Il’in</surname><given-names>O. I.</given-names></name></name-alternatives><bio xml:lang="en"><p>Taganrog</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Rudyk</surname><given-names>N. N.</given-names></name></name-alternatives><bio xml:lang="en"><p>Taganrog</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Konshin</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="en"><p>Taganrog</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Ageev</surname><given-names>O. A.</given-names></name></name-alternatives><bio xml:lang="en"><p>Taganrog</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>Southern Federal University, Research and Education Center “Nanotechnologies”</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2018</year></pub-date><pub-date pub-type="epub"><day>24</day><month>08</month><year>2025</year></pub-date><volume>9</volume><issue>1</issue><elocation-id>76–78</elocation-id><permissions><copyright-statement>Copyright &amp;#x00A9; Il’ina M.V., Il’in O.I., Rudyk N.N., Konshin A.A., Ageev O.A., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Il’ina M.V., Il’in O.I., Rudyk N.N., Konshin A.A., Ageev O.A.</copyright-holder><copyright-holder xml:lang="en">Il’ina M.V., Il’in O.I., Rudyk N.N., Konshin A.A., Ageev O.A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/1403">https://nanojournal.ifmo.ru/jour/article/view/1403</self-uri><abstract><p>It is shown that the non-uniform elastic strain is the memristive switching origin in carbon nanotubes (CNT). The dependence of the resistance ratio in high- and low-resistance states of the non-uniformly strained CNT on the value strain is obtained. The process of the strain redistribution and its effect on the conductivity of CNT under action of the external electric field strength is studied. The obtained results can be used to develop memristor structures with reproducible parameters based on non-uniformly strained of carbon nanotubes.</p></abstract><kwd-group xml:lang="en"><kwd>carbon nanotube</kwd><kwd>strain</kwd><kwd>memristive switching</kwd><kwd>piezoelectric effect</kwd><kwd>scanning tunnel microscopy</kwd></kwd-group><funding-group><funding-statement xml:lang="en">The results were obtained using the equipment of Research and Education Center and the Center for Collective Use “Nanotechnologies” of Southern Federal University.  image  This work was supported by the Russian Foundation for Basic Research (project No. 16-29-14023 ofi m) and by Southern Federal University (grant No. VnGr-07/2017-26).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Ageev O.A., Blinov Yu.F., Il’in O.I., Kolomiitsev A.S., Konoplev B.G., Rubashkina M.V., Smirnov V.A., Fedotov A.A. 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