najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2018-9-1-110-113najo-1412Research ArticleСтатьиElectron overheating during field emission from carbon island films due to phonon bottleneck effectArkhipovA. V.

St. Petersburg

ZhurkinA. M.

St. Petersburg

KvashenkinaO. E.

St. Petersburg

OsipovV. S.

St. Petersburg

GabdullinP. G.

St. Petersburg

Peter the Great St. Petersburg Polytechnic UniversityRussian Federation20182408202591110–113Copyright © Arkhipov A.V., Zhurkin A.M., Kvashenkina O.E., Osipov V.S., Gabdullin P.G., 20252025Arkhipov A.V., Zhurkin A.M., Kvashenkina O.E., Osipov V.S., Gabdullin P.G.Arkhipov A.V., Zhurkin A.M., Kvashenkina O.E., Osipov V.S., Gabdullin P.G.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/1412

The paper discusses a possible model of low-field electron emission that could be applicable to carbon island films on silicon. Such films were recently showed to have emission thresholds as low as 0.4–1.5 V/µm. Discontinuity of the film – and not the presence of field-enhancing morphological features or low-workfunction spots – seems to be the necessary condition for good emission capability. We suggest a hot-electron emission model with emission center representing a single isolated nanosized island of sp2 carbon having the properties of a quantum dot. Quantization of its electron energy spectrum determines electron/phonon decoupling (“phonon bottleneck” effect) and long electron relaxation times, which makes emission the dominating option for hot electrons of sufficient energy injected in the island. The consequences of this suggestion are quantitatively considered for typical experimental situation.

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The authors declare that there are no conflicts of interest present.