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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2025-16-4-467-471</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-1446</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHYSICS</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИКА</subject></subj-group></article-categories><title-group><article-title>Surface electronic structure of TbIr2Si2 antiferromagnet</article-title><trans-title-group xml:lang="ru"><trans-title>Поверхностная электронная структура антиферромагнетика TbIr2Si2</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Перминова</surname><given-names>Д. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Perminova</surname><given-names>D. A.</given-names></name></name-alternatives><bio xml:lang="en"><p>634055 Tomsk, Russia </p></bio><email xlink:type="simple">homyak.22.07.1999@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Швец</surname><given-names>И. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Shvets</surname><given-names>I. A.</given-names></name></name-alternatives><bio xml:lang="en"><p>199034 St. Petersburg, Russia </p></bio><email xlink:type="simple">shvets_ia@mail.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-0390-0007</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Усачев</surname><given-names>Д. Ю.</given-names></name><name name-style="western" xml:lang="en"><surname>Usachov</surname><given-names>D. Yu.</given-names></name></name-alternatives><bio xml:lang="en"><p>199034 St. Petersburg, Russia </p></bio><email xlink:type="simple">dmitry.usachov@spbu.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Вялых</surname><given-names>Д. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Vyalykh</surname><given-names>D. V.</given-names></name></name-alternatives><bio xml:lang="en"><p>199034 St. Petersburg, Russia </p></bio><email xlink:type="simple">denis.vyalikh@gmail.com</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-9477-3017</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Еремеев</surname><given-names>С. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Eremeev</surname><given-names>S. V.</given-names></name></name-alternatives><bio xml:lang="en"><p>634055 Tomsk, Russia</p><p>199034 St. Petersburg, Russia </p></bio><email xlink:type="simple">eremeev@ispms.ru</email><xref ref-type="aff" rid="aff-4"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>Institute of Strength Physics and Materials Science, Russian Academy of Sciences</institution><country>Russian Federation</country></aff><aff xml:lang="en" id="aff-2"><institution>St. Petersburg State University</institution><country>Russian Federation</country></aff><aff xml:lang="en" id="aff-3"><institution>St. Petersburg State University,</institution><country>Russian Federation</country></aff><aff xml:lang="en" id="aff-4"><institution>Institute of Strength Physics and Materials Science, Russian Academy of Sciences;&#13;
St. Petersburg State University</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>03</day><month>09</month><year>2025</year></pub-date><volume>16</volume><issue>4</issue><fpage>467</fpage><lpage>471</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Perminova D.A., Shvets I.A., Usachov D.Y., Vyalykh D.V., Eremeev S.V., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Перминова Д.А., Швец И.А., Усачев Д.Ю., Вялых Д.В., Еремеев С.В.</copyright-holder><copyright-holder xml:lang="en">Perminova D.A., Shvets I.A., Usachov D.Y., Vyalykh D.V., Eremeev S.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/1446">https://nanojournal.ifmo.ru/jour/article/view/1446</self-uri><abstract><p>By means of ab initio density functional theory (DFT) calculations, we examined the surface electronic structure of the TbIr2Si2 antiferromagnet, which is distinguished by the out-of-plane alignment of Tb 4f moments and a high Neel temperature. We analyzed the interplay between the spin-orbit and exchange in- ´ teractions and their effect on the dispersion of surface states resided in the projected band gap around the M¯ point of the surface Brillouin zone, and compared our theoretical findings with low-temperature angle-resolved photoemission spectroscopy (ARPES) measurements.</p></abstract><trans-abstract xml:lang="ru"><p>С помощью ab initio расчетов в рамках теории функционала плотности (DFT) мы изучили поверхностную электронную структуру антиферромагнетика TbIr2Si2, который характеризуется ориентацией магнитных моментов Tb 4f перпендикулярно плоскости магнитных атомов и высокой температурой Нееля. Мы проанализировали взаимодействие между спин-орбитальными и обменными взаимодействиями и их влияние на дисперсию поверхностных состояний, находящихся в проецируемой запрещенной зоне вблизи точки M поверхностной зоны Бриллюэна, и сравнили результаты расчётов с низкотемпературными измерениями фотоэлектронной спектроскопии с угловым разрешением (ARPES).</p></trans-abstract><kwd-group xml:lang="ru"><kwd>магнитные редкоземельные интерметаллические материалы</kwd><kwd>поверхностная электронная структура</kwd><kwd>теория функционала плотности</kwd><kwd>фотоэмиссионная спектроскопия с угловым разрешением</kwd></kwd-group><kwd-group xml:lang="en"><kwd>magnetic rare-earth intermetallic materials</kwd><kwd>surface electronic structure</kwd><kwd>density functional theory</kwd><kwd>angle-resolved photoemission spectroscopy</kwd></kwd-group><funding-group><funding-statement xml:lang="en">The authors acknowledge support from the Saint-Petersburg State University (project 125022702939-2). 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