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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">najo-1555</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHYSICS</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИКА</subject></subj-group></article-categories><title-group><article-title>Formation of laser-induced periodic surface structures on an As50Se50 film under femtosecond laser irradiation with wavelengths of 400-800 nm</article-title><trans-title-group xml:lang="ru"><trans-title>Формирование лазерно-индуцированных периодических поверхностных структур на пленке As50Se50 при фемтосекундном лазерном облучении с длинами волн 400-800 нм.</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-2608-7621</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Пахольчук</surname><given-names>Петр Павлович</given-names></name><name name-style="western" xml:lang="en"><surname>Pakholchuk</surname><given-names>Petr Pavlovich</given-names></name></name-alternatives><email xlink:type="simple">p.paholchuk@lebedev.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-3555-6693</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Шулейко</surname><given-names>Дмитрий Валерьевич</given-names></name><name name-style="western" xml:lang="en"><surname>Shuleiko</surname><given-names>Dmitrii Valerievich</given-names></name></name-alternatives><email xlink:type="simple">shuleyko.dmitriy@physics.msu.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-9615-3869</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Барбашов</surname><given-names>Вадим Александрович</given-names></name><name name-style="western" xml:lang="en"><surname>Barbashov</surname><given-names>Vadim Aleksandrovich</given-names></name></name-alternatives><email xlink:type="simple">barbashovva@lebedev.ru</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-2528-4869</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Заботнов</surname><given-names>Станислав Васильевич</given-names></name><name name-style="western" xml:lang="en"><surname>Zabotnov</surname><given-names>Stanislav Vasilyevich</given-names></name></name-alternatives><email xlink:type="simple">zabotnov@physics.msu.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-7405-551X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Козюхин</surname><given-names>Сергей Александрович</given-names></name><name name-style="western" xml:lang="en"><surname>Kozyukhin</surname><given-names>Sergey Aleksandrovich</given-names></name></name-alternatives><email xlink:type="simple">sergkoz@igic.ras.ru</email><xref ref-type="aff" rid="aff-4"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-6889-001X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кашкаров</surname><given-names>Павел Константинович</given-names></name><name name-style="western" xml:lang="en"><surname>Kashkarov</surname><given-names>Pavel Konstantinovich</given-names></name></name-alternatives><email xlink:type="simple">kashkarov@physics.msu.ru</email><xref ref-type="aff" rid="aff-5"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Физический институт имени П. Н. Лебедева Российской академии наук, Москва, Россия.&#13;
Московский государственный университет имени М.В. Ломоносова, физический факультет, Москва, Россия</institution></aff><aff xml:lang="en"><institution>Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninsky Avenue, Moscow 119991, Russia;&#13;
Faculty of Physics, Moscow State University, 1/2 Leninskie Gory, Moscow, 119991, Russia;</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Московский государственный университет имени М.В. Ломоносова, физический факультет, Москва, Россия</institution></aff><aff xml:lang="en"><institution>Faculty of Physics, Moscow State University, 1/2 Leninskie Gory, Moscow, 119991, Russia;</institution></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Физический институт имени П. Н. Лебедева Российской академии наук, Москва, Россия.</institution></aff><aff xml:lang="en"><institution>Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninsky Avenue, Moscow 119991, Russia;</institution></aff></aff-alternatives><aff-alternatives id="aff-4"><aff xml:lang="ru"><institution>Институт общей и неорганической химии имени Н.С. Курнакова, Москва, Россия</institution></aff><aff xml:lang="en"><institution>Kurnakov Institute of General and Inorganic Chemistry, 31 Leninsky Avenue, Moscow, 119071, Russia</institution></aff></aff-alternatives><aff-alternatives id="aff-5"><aff xml:lang="ru"><institution>Московский государственный университет имени М.В. Ломоносова, физический факультет, Москва, Россия.&#13;
Национальный исследовательский центр ” Курчатовский институт“, Москва, Россия</institution></aff><aff xml:lang="en"><institution>Faculty of Physics, Moscow State University, 1/2 Leninskie Gory, Moscow, 119991, Russia;&#13;
National Research Centre “Kurchatov Institute”, 1 Akademika Kurchatova Sq., Moscow, 123182, Russia;</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>05</day><month>02</month><year>2026</year></pub-date><volume>16</volume><issue>6</issue><elocation-id>1555</elocation-id><permissions><copyright-statement>Copyright &amp;#x00A9; Pakholchuk P.P., Shuleiko D.V., Barbashov V.A., Zabotnov S.V., Kozyukhin S.A., Kashkarov P.K., 2026</copyright-statement><copyright-year>2026</copyright-year><copyright-holder xml:lang="ru">Пахольчук П.П., Шулейко Д.В., Барбашов В.А., Заботнов С.В., Козюхин С.А., Кашкаров П.К.</copyright-holder><copyright-holder xml:lang="en">Pakholchuk P.P., Shuleiko D.V., Barbashov V.A., Zabotnov S.V., Kozyukhin S.A., Kashkarov P.K.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/1555">https://nanojournal.ifmo.ru/jour/article/view/1555</self-uri><abstract><p>Laser-induced periodic surface structures (LIPSS) on chalcogenide glassy semiconductors are of great interest for creating polarization-sensitive optical elements. This study investigates the formation of LIPSS on the surface of an As50Se50 amorphous film, fabricated by thermal vacuum deposition, under femtosecond laser irradiation in the wavelength range from 400 to 800 nm. The periods of various LIPSS types depend linearly on laser wavelength. The measured birefringence of so-called low spatial frequency LIPSS, formed by different irradiation wavelengths are in the 10-85 nm range. The maximum birefringence of 85 nm was obtained for structures irradiated at a 480 nm wavelength. A significant decrease in birefringence was observed at a wavelength of 800 nm, which may be due formation of a less pronounced and more disordered surface relief caused by less effective absorption of modifying laser radiation with photon energy lower than optical band gap of As50Se50. Decreased optical absorption observed in As50Se50 films with LIPSS is caused by increased light scattering on the surface relief.</p></abstract><trans-abstract xml:lang="ru"><p>Лазерно-индуцированные периодические поверхностные структуры (ЛИППС) на халькогенидных стеклообразных полупроводниках представляют большой интерес для создания поляризационно-чувствительных оптических элементов. В данной работе исследуется формирование ЛИППС на поверхности аморфной пленки As50Se50, изготовленной методом термического вакуумного осаждения, при фемтосекундном лазерном облучении в диапазоне длин волн от 400 до 800 нм. Периоды различных типов ЛИППС линейно зависят от длины волны лазера. Измеренное двойное лучепреломление так называемых низкочастотных пространственных ЛИППС, формируемых различными длинами волн излучения, находится в диапазоне 10-85 нм. Максимальное двулучепреломление, равное 85 нм, было получено для структур, облученных при длине волны 480 нм. Значительное снижение двулучепреломления наблюдалось на длине волны 800 нм, что может быть связано с формированием менее выраженного и более неупорядоченного рельефа поверхности, вызванного менее эффективным поглощением модифицирующего лазерного излучения с энергией фотонов ниже ширины оптической запрещенной зоны As50Se50. Снижение оптического поглощения, наблюдаемое в пленках As50Se50 с ЛИППС, вызвано повышенным рассеянием света на рельефе поверхности.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>лазерно-индуцированные периодические поверхностные структуры</kwd><kwd>As50Se50 аморфные пленки</kwd><kwd>лазерно-индуцированное двулучепреломление</kwd><kwd>оптический ретарданс</kwd></kwd-group><kwd-group xml:lang="en"><kwd>laser-induced periodic surface structures</kwd><kwd>As50Se50 amorphous films</kwd><kwd>laser-induced birefringence</kwd><kwd>optical retardance</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена при поддержке Российского научного фонда (грант № 22-19-00035-П, https://rscf.ru/project/22-19-00035/).</funding-statement><funding-statement xml:lang="en">This work was supported by the Russian Science Foundation (Grant No. 22-19-00035-П, https://rscf.ru/project/22-19-00035/)</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Iovu M.S., Shutov S.D., Popescu M. 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