najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2025-16-6-908-914najo-1629Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХFormation of laser-induced periodic surface structures on an As50Se50 film under femtosecond laser irradiation with wavelengths of 400-800 nmФормирование лазерно-индуцированных периодических поверхностных структур на пленке As50Se50 при фемтосекундном лазерном облучении с длинами волн 400-800 нмhttps://orcid.org/0000-0002-2608-7621ПахольчукП. П.PakholchukP. P.

Petr P. Pakholchuk - Faculty of Physics

53 Leninsky Avenue, Moscow 119991;  1/2 Leninskie Gory, Moscow, 119991

p.paholchuk@lebedev.ruhttps://orcid.org/0000-0003-3555-6693ШулейкоД. В.ShuleikoD. V.

Dmitrii V. Shuleiko – Faculty of Physics

1/2 Leninskie Gory, Moscow, 119991

shuleyko.dmitriy@physics.msu.ruhttps://orcid.org/0000-0001-9615-3869БарбашовВ. А.BarbashovV. A.

Vadim A. Barbashov

53 Leninsky Avenue, Moscow, 119991

barbashovva@lebedev.ruhttps://orcid.org/0000-0002-2528-4869ЗаботновС. В.ZabotnovS. V.

Stanislav V. Zabotnov – Faculty of Physics

1/2 Leninskie Gory, Moscow, 119991

zabotnov@physics.msu.ruhttps://orcid.org/0000-0002-7405-551XКозюхинС. А.KozyukhinS. A.

Sergey A. Kozyukhin 

31 Leninsky Avenue, Moscow, 119071

sergkoz@igic.ras.ruhttps://orcid.org/0000-0001-6889-001XКашкаровП. К.KashkarovP. K.

Pavel K. Kashkarov – Faculty of Physics

1/2 Leninskie Gory, Moscow, 119991; 1 Akademika Kurchatova Sq., Moscow, 123182

kashkarov@physics.msu.ruLebedev Physical Institute, Russian Academy of Sciences; Moscow State UniversityRussian FederationMoscow State UniversityRussian FederationLebedev Physical Institute, Russian Academy of SciencesRussian FederationKurnakov Institute of General and Inorganic ChemistryRussian FederationLebedev Physical Institute, Russian Academy of Sciences, Moscow State University; National Research Centre “Kurchatov Institute”Russian Federation202506012026166908914Copyright © Pakholchuk P.P., Shuleiko D.V., Barbashov V.A., Zabotnov S.V., Kozyukhin S.A., Kashkarov P.K., 20262026Пахольчук П.П., Шулейко Д.В., Барбашов В.А., Заботнов С.В., Козюхин С.А., Кашкаров П.К.Pakholchuk P.P., Shuleiko D.V., Barbashov V.A., Zabotnov S.V., Kozyukhin S.A., Kashkarov P.K.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/1629

Laser-induced periodic surface structures (LIPSS) on chalcogenide glassy semiconductors are of great interest in relation with creating polarization-sensitive optical elements. This study investigates the formation of LIPSS on the surface of As50Se50 amorphous film, fabricated by thermal vacuum deposition, under femtosecond laser irradiation in the wavelength range from 400 to 800 nm. The periods of various LIPSS types depend linearly on the laser wavelength. The measured birefringence of so-called low spatial frequency LIPSS, formed by different irradiation wavelengths, are in the 10–85 nm range. The maximum birefringence of 85 nm was obtained for structures irradiated at a 480 nm wavelength. A significant decrease in birefringence was observed at a wavelength of 800 nm, which may be due to the formation of a less pronounced and more disordered surface relief caused by less effective absorption of modifying laser radiation with photon energy lower than optical band gap of As50Se50. Decreased optical absorption observed in As50Se50 films with LIPSS is caused by increased light scattering on the surface relief.

Лазерно-индуцированные периодические поверхностные структуры (ЛИППС) на халькогенидных стеклообразных полупроводниках представляют большой интерес для создания поляризационно-чувствительных оптических элементов. В данной работе исследуется формирование ЛИППС на поверхности аморфной пленки As50Se50, изготовленной методом термического вакуумного осаждения, при фемтосекундном лазерном облучении в диапазоне длин волн от 400 до 800 нм. Периоды различных типов ЛИППС линейно зависят от длины волны лазера. Измеренное двойное лучепреломление так называемых низкочастотных пространственных ЛИППС, формируемых различными длинами волн излучения, находится в диапазоне 10-85 нм. Максимальное двулучепреломление, равное 85 нм, было получено для структур, облученных при длине волны 480 нм. Значительное снижение двулучепреломления наблюдалось на длине волны 800 нм, что может быть связано с формированием менее выраженного и более неупорядоченного рельефа поверхности, вызванного менее эффективным поглощением модифицирующего лазерного излучения с энергией фотонов ниже ширины оптической запрещенной зоны As50Se50. Снижение оптического поглощения, наблюдаемое в пленках As50Se50 с ЛИППС, вызвано повышенным рассеянием света на рельефе поверхности.

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The authors declare that there are no conflicts of interest present.