najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2023-14-6-699-704najo-165Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХSurface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin filmsТопология поверхности, электрофизические свойства и механизм формирования тонких пленок сульфида олова (II)КожевниковаН. С.KozhevnikovaN. S.

Ekaterinburg

kozhevnikova@ihim.uran.ruМаскаеваЛ. Н.MaskaevaL. N.

Ekaterinburg

larisamaskaeva@yandex.ruЕняшинА. Н.EnyashinA. N.

Ekaterinburg

enyashin@ihim.uran.ruТютюнникА. П.TyutyunnikA. P.

Ekaterinburg

enyashin@ihim.uran.ruЛипинаО. А.LipinaO. A.

Ekaterinburg

tyutyunnik@ihim.uran.ruСелянинИ. О.SelyaninI. O.

Ekaterinburg

sioprostreet@mail.ruМарковВ. Ф.MarkovV. F.

Ekaterinburg

v.f.markov@urfu.ruInstitute of Solid State Chemistry of the Ural Branch of RASRussian FederationUral Federal UniversityRussian Federation202302062025146699704Copyright © Kozhevnikova N.S., Maskaeva L.N., Enyashin A.N., Tyutyunnik A.P., Lipina O.A., Selyanin I.O., Markov V.F., 20252025Кожевникова Н.С., Маскаева Л.Н., Еняшин А.Н., Тютюнник А.П., Липина О.А., Селянин И.О., Марков В.Ф.Kozhevnikova N.S., Maskaeva L.N., Enyashin A.N., Tyutyunnik A.P., Lipina O.A., Selyanin I.O., Markov V.F.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/165

Photosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles’ agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal p-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells.

Методом химического осаждения получены фоточувствительные тонкие пленки сульфида олова (II) с размером областей когерентного рассеяния около 30 нм. Экспериментально продемонстрировано, что при варьировании времени осаждения значительно различаются микроструктура и толщина пленки, а также размер формирующих пленку агломератов. Изучены тип проводимости и токовая чувствительность полученных нанокристаллических пленок SnS. Все синтезированные пленки SnS вне зависимости от длительности синтеза обладают р-типом проводимости. Для подтверждения роли вакансий олова в регулировании типа проводимости SnS выполнены квантово-химические расчёты электронной структуры -SnS. На основании данных атомно-силовой микроскопии показано, что фрактальный подход дает более глубокое понимание процессов, происходящих при образовании слоя на подложке. Полученные данные свидетельствуют о перспективности использования пленок SnS в качестве поглощающего слоя тонкопленочных солнечных элементов. 

моносульфид олова (II)тонкие пленкихимическое осаждение из растворовр-тип проводимостиквантово-химические расчетымеханизм формированияtin(II) sulfidethin filmschemical bath depositionp-type conductivityquantum-chemical calculationsformation mechanismThis work was carried out in accordance with the scientific and research plans and state assignment of the ISSC UB RAS and Ural Federal University Program of Development within the Priority-2030 Program (Ministry of Science and Higher Education of the Russian Federation).ReferencesBrent J.R., Lewis D.J., Lorenz T., Lewis E.A., Savjani N., Haigh S.J., Seifert G., Derby B., O’Brien P. Tin(II) Sulfide (SnS) Nanosheets by Liquid-Phase Exfoliation of Herzenbergite: IV-VI Main Group Two-Dimensional Atomic Crystals. J. Am. Chem. Soc., 2015, 137(39), P. 12689–12696.Brent J.R., Lewis D.J., Lorenz T., Lewis E.A., Savjani N., Haigh S.J., Seifert G., Derby B., O’Brien P. Tin(II) Sulfide (SnS) Nanosheets by Liquid-Phase Exfoliation of Herzenbergite: IV-VI Main Group Two-Dimensional Atomic Crystals. J. Am. Chem. Soc., 2015, 137(39), P. 12689–12696.Banai R.E., Horn M.W., Brownson J.R.S. A review of tin(II) monosulfide and its potential as a photovoltaic absorber. Solar Energy Materials & Solar Cells, 2016, 150, P. 112–129.Banai R.E., Horn M.W., Brownson J.R.S. A review of tin(II) monosulfide and its potential as a photovoltaic absorber. Solar Energy Materials & Solar Cells, 2016, 150, P. 112–129.Sinsermsuksakul P., Heo J., Noh W., Hock A.S., Gordon R.G. Atomic layer deposition of tin monosulfide thin films. Adv. Energy Mater., 2011, 1, P. 1116–1125.Sinsermsuksakul P., Heo J., Noh W., Hock A.S., Gordon R.G. Atomic layer deposition of tin monosulfide thin films. Adv. Energy Mater., 2011, 1, P. 1116–1125.Reddy K.T.R., Reddy N.K., Miles R.W. Photovoltaic properties of SnS based solar cells. Sol. Energy Mater. Sol. Cells, 2006, (90), P. 3041–3046.Reddy K.T.R., Reddy N.K., Miles R.W. Photovoltaic properties of SnS based solar cells. Sol. Energy Mater. Sol. Cells, 2006, (90), P. 3041–3046.Garc´ıa A., Papior N., Akhtar A., Artacho E., Blum V., Bosoni E., Brandimarte P., Brandbyge M., Cerd´a J.I., Corsetti F., Cuadrado R., Dikan V., Ferrer J., Gale J., Garc´ıa-Fern´andez P., Garc´ıa-Su´arez V.M., Garc´ıa S., Huhs G., Illera S., Koryt´ar R., Koval P., Lebedeva I., Lin L., L´opez-Tarifa P., Mayo S.G., Mohr S., Ordej´on P., Postnikov A., Pouillon Y., Pruneda M., Robles R., S´anchez-Portal D., Soler J.M., Ullah R., Yu V.W., Junquera J.J. Siesta: Recent developments and applications. J. Chem. Phys., 2020, 152, P. 204108.Garc´ıa A., Papior N., Akhtar A., Artacho E., Blum V., Bosoni E., Brandimarte P., Brandbyge M., Cerd´a J.I., Corsetti F., Cuadrado R., Dikan V., Ferrer J., Gale J., Garc´ıa-Fern´andez P., Garc´ıa-Su´arez V.M., Garc´ıa S., Huhs G., Illera S., Koryt´ar R., Koval P., Lebedeva I., Lin L., L´opez-Tarifa P., Mayo S.G., Mohr S., Ordej´on P., Postnikov A., Pouillon Y., Pruneda M., Robles R., S´anchez-Portal D., Soler J.M., Ullah R., Yu V.W., Junquera J.J. Siesta: Recent developments and applications. J. Chem. Phys., 2020, 152, P. 204108.Titova L.V., Fregoso B.M., Grimm R.L. Chapter 5: Group-IV monochalcogenides GeS, GeSe, SnS, SnSe, in book Chalcogenide: From 3D to 2D and Beyond. Woodhead Publishing Series in Electronic and Optical Materials, 2020, P. 119–151.Titova L.V., Fregoso B.M., Grimm R.L. Chapter 5: Group-IV monochalcogenides GeS, GeSe, SnS, SnSe, in book Chalcogenide: From 3D to 2D and Beyond. Woodhead Publishing Series in Electronic and Optical Materials, 2020, P. 119–151.Vidal J., Lany S., d’Avezac M., Zunger A., Zakutaev A., Francis J., Tate J. Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS. Applied Physics Letters, 2012, 100(3), P. 032104.Vidal J., Lany S., d’Avezac M., Zunger A., Zakutaev A., Francis J., Tate J. Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS. Applied Physics Letters, 2012, 100(3), P. 032104.Roldughin V.I. Fractal structures in disperse systems. Russian Chemical Reviews, 2003, 72(10), P. 823–847.Roldughin V.I. Fractal structures in disperse systems. Russian Chemical Reviews, 2003, 72(10), P. 823–847.Roldughin V.I. The characteristics of fractal disperse systems. Russian Chemical Reviews, 2003, 72(11), P. 913–937.Roldughin V.I. The characteristics of fractal disperse systems. Russian Chemical Reviews, 2003, 72(11), P. 913–937.Samsonov V.M., Kuznetsova Y.V., D’yakova E.V. Fractal properties of aggregates of metal nanoclusters on solid surface. Russian Journal of Applied Physics, 2016, 86(2), P. 71–77.Samsonov V.M., Kuznetsova Y.V., D’yakova E.V. Fractal properties of aggregates of metal nanoclusters on solid surface. Russian Journal of Applied Physics, 2016, 86(2), P. 71–77.Feder E. Fractals. Moscow: Mir, 1991, 260 p. (In Russian).Feder E. Fractals. Moscow: Mir, 1991, 260 p. (In Russian).Smirnov B.M. Physics of fractal clusters. Moscow: Nauka, 1991. 136 p, (In Russian).Smirnov B.M. Physics of fractal clusters. Moscow: Nauka, 1991. 136 p, (In Russian).Antonov A.S., Sdobnyakov N.Y., Ivanov D.V., Podbolotov K.B. Morphology investigation study of the copper films relief on a mica surface. Fizikokhimicheskie aspekty izucheniya klasterov, nanostruktur i nanomaterialov [Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials], 2017, 9, P. 19–26, (In Russian).Antonov A.S., Sdobnyakov N.Y., Ivanov D.V., Podbolotov K.B. Morphology investigation study of the copper films relief on a mica surface. Fizikokhimicheskie aspekty izucheniya klasterov, nanostruktur i nanomaterialov [Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials], 2017, 9, P. 19–26, (In Russian).Sdobnyakov N.Y., Antonov A.S., Ivanov D.V. Morphological characteristics and fractal analysis of metal films on dielectric surfaces. Tver: Tver State University, 2019, 168 p, (In Russian).Sdobnyakov N.Y., Antonov A.S., Ivanov D.V. Morphological characteristics and fractal analysis of metal films on dielectric surfaces. Tver: Tver State University, 2019, 168 p, (In Russian).Brylkin Y.V., Kustov A.L.Correlation between fractal dimension and different roughness for copper samples. Fiziko-khimicheskie aspekty izucheniya klasterov, nanostruktur i nanomaterialov [Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials], 2013, 5, P. 33–38, (In Russian).Brylkin Y.V., Kustov A.L.Correlation between fractal dimension and different roughness for copper samples. Fiziko-khimicheskie aspekty izucheniya klasterov, nanostruktur i nanomaterialov [Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials], 2013, 5, P. 33–38, (In Russian).Panin A.V., Shugurov A.R. Application of fractal description for image analysis in scanning probe microscopy. Poverkhnost [Surface], 2003, 6, P. 62–69, (In Russian).Panin A.V., Shugurov A.R. Application of fractal description for image analysis in scanning probe microscopy. Poverkhnost [Surface], 2003, 6, P. 62–69, (In Russian).

The authors declare that there are no conflicts of interest present.