najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2026-17-2-187-192najo-1759Research ArticlePHYSICSФИЗИКАHow to make opposite state store againКак вновь заставить хранить инверсное состояниеhttps://orcid.org/0000-0002-8901-5051КузьмичевД. С.KuzmichevD. S.

Dmitry S. Kuzmichev 

Institutskii per. 9, 141700 Dolgoprudny, Moscow region 

kuzmichev.ds@mipt.ruhttps://orcid.org/0000-0002-9112-4898КонстантиновВ. С.KonstantinovV. S.

Vyacheslav S. Konstantinov  

Institutskii per. 9, 141700 Dolgoprudny, Moscow region 

Akademika Valieva st. 6/1, 124460 Zelenograd

vkonstantinov@niime.ruhttps://orcid.org/0009-0000-0204-5104СизыхН. А.SizykhN. A.

Nikita A. Sizykh 

Institutskii per. 9, 141700 Dolgoprudny, Moscow region 

sizykh.na@mipt.ruhttps://orcid.org/0000-0003-0707-8567ХакимовР. Р.KhakimovR. R.

Roman R. Khakimov 

Institutskii per. 9, 141700 Dolgoprudny, Moscow region 

khakimov.rr@mipt.ruMoscow Institute of Physics and TechnologyRussian FederationMoscow Institute of Physics and Technology ; Molecular Electronics Research InstituteRussian Federation202630042026172187192Copyright © Kuzmichev D.S., Konstantinov V.S., Sizykh N.A., Khakimov R.R., 20262026Кузьмичев Д.С., Константинов В.С., Сизых Н.А., Хакимов Р.Р.Kuzmichev D.S., Konstantinov V.S., Sizykh N.A., Khakimov R.R.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/1759

The article shows the possibility of increasing the storage time of the opposite state (OS) at a temperature of 145 °C from 140 to 500 minutes in ferroelectric capacitors based on Hf0.5Zr0.5O2 (HZO) by shift of current integration endpoint to right. Consideration of transient processes between measurement pulses after 500 minutes capacitors baking at 145 °C can enhance the OS retention from 21 to 35 % of the preheating state. Opposite trend detected for the same sate (SS) (decrease from 56 to 35 %) and new same state (NSS) (decrease from 63 to 45 %). It is also shown that the presence of a voltage shift caused by an imprint in some cases may not lead to a loss of polarization due to the current flowing during the flat part of the trapezoidal voltage pulse.

В настоящей статье показана возможность увеличить время хранения инверсного состояния OS с 140 до 500 мин при 145 ℃ в сегнетоэлектрических конденсаторах на основе Hf0.5Zr0.5O2 (HZO) путем сдвига вправо конечной точки интегрирования тока. Учет переходных процессов между управляющими импульсами после отжига в течение 500 мин при температуре 145 ℃ позволяет повысить сохраняемость состояния OS с 21 % до 35 % от начального значения. Противоположная тенденция выявлена для состояний SS (снижение с 56 % до 35 %) и NSS (снижение с 63 % до 45 %). Также показано, что наличие сдвига напряжения, вызванного эффектом импринта, в некоторых случаях может и не приводить деградации поляризации благодаря току, который протекает на полке максимального напряжения управляющего импульса.

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The authors declare that there are no conflicts of interest present.