najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2026-17-3-291-296najo-1834Research ArticlePHYSICSФИЗИКАCalculation of characteristics of subnanometer delta-doped layers in diamond in the quasi-classical approachВычисление характеристик субнанометровых дельта-легированных слоёв в алмазе в квазиклассическом приближенииhttps://orcid.org/0000-0002-8528-3884КукушкинВ. А.KukushkinV. A.

Vladimir A. Kukushkin – Federal Research Center A. V. Gaponov-Grekhov Institute of Applied Physics of the RAS, Nizhny Novgorod, Russia; National Research Lobachevsky SU of Nizhny Novgorod.

Nizhny Novgorod

vakuk@ipfran.ruКукушкинЮ. В.KukushkinYu. V.

Yuriy V. Kukushkin

Nizhny Novgorod

yuriy.kukushkinn@gmail.comFederal Research Center A. V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences; National Research Lobachevsky State University of Nizhny NovgorodRussian FederationNational Research Lobachevsky State University of Nizhny NovgorodRussian Federation202618072026173291296Copyright © Kukushkin V.A., Kukushkin Y.V., 20262026Кукушкин В.А., Кукушкин Ю.В.Kukushkin V.A., Kukushkin Y.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/1834

It is shown that subnanometer boron delta-doped layers characteristics in chemically vapor deposited diamond films can be calculated in the quasi-classical approximation both in equilibrium and in an external electromagnetic field ionizing doping boron atoms. The corresponding solutions are found, in the first case – analytically, in the second – numerically. The use of the quasi-classical approximation allows one to simplify significantly the mathematical modeling of diamond structures with subnanometer delta-doped layers, necessary for their application in nanoelectronics, for example in high-speed field-effect transistors.

Показано, что характеристики субнанометровых дельта-легированных бором слоёв в химически осаждённых из газовой фазы алмазных плёнках могут быть вычислены в квазиклассическом приближении как в равновесии, так и во внешнем электромагнитном поле, ионизирующем легирующие атомы бора. Найдены соответствующие решения, в первом случае – аналитически, во втором – численно. Использование квазиклассического приближения позволяет существенно упростить математическое моделирование алмазных структур с субнанометровыми дельта-легированными слоями, необходимое для их использования в наноэлектронике, например в быстродействующих полевых транзисторах.

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The authors declare that there are no conflicts of interest present.