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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2023-14-1-69-73</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-190</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHYSICS</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИКА</subject></subj-group></article-categories><title-group><article-title>Performance enhancement of triboelectric nanogenerator using iodine doped PVDF</article-title><trans-title-group xml:lang="ru"><trans-title>Повышение производительности трибоэлектрического наногенератора с использованием ПВДФ, легированного йодом</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Фогаат</surname><given-names>Р.</given-names></name><name name-style="western" xml:lang="en"><surname>Phogaat</surname><given-names>R.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Рохит Фогаат,</p><p>Харьяна.</p></bio><bio xml:lang="en"><p>Rohit Phogaat – Amity Institute of Nanotechnology,</p><p>Haryana, 122412.</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-1544-9532</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Йепури</surname><given-names>В.</given-names></name><name name-style="western" xml:lang="en"><surname>Yepuri</surname><given-names>V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Венкатеш Йепури,</p><p>Ситхарампурам, шт. Нарсапур.</p></bio><bio xml:lang="en"><p>Venkatesh Yepuri – Department of Electrical and Electronics Engineering, </p><p>Seetharampuram, Narsapur, 534280.</p></bio><email xlink:type="simple">venkatesh.yepuri555@gmail.com</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>Amity University Haryana</institution><country>India</country></aff><aff xml:lang="en" id="aff-2"><institution>Swarnandhra College of Engineering and Technology</institution><country>India</country></aff><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>05</day><month>06</month><year>2025</year></pub-date><volume>14</volume><issue>1</issue><fpage>69</fpage><lpage>73</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Phogaat R., Yepuri V., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Фогаат Р., Йепури В.</copyright-holder><copyright-holder xml:lang="en">Phogaat R., Yepuri V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/190">https://nanojournal.ifmo.ru/jour/article/view/190</self-uri><abstract><p>Because of the rapid improvement of energy collecting technologies, unique mechanical devices have been created. As a result of the energy problems, however, researchers began to create new procedures and strategies for storing as much energy as feasible. Nanotechnology is unique, and it spurred the invention of Triboelectric Nanogenerators (TENGs), which are employed as a source of energy in wearables by transforming mechanical energy into electrical energy. This article discusses TENG, which is a triboelectric material made from Polyvinylidene fluoride (PVDF) and aluminium (Al). TENG may be made in two ways: with PVDF alone or with iodine doped PVDF, with Al staying the same in the both cases. Despite the fact that the materials are triboelectric, aluminium electrodes are utilised to attach to the materials, which are created on a plastic substrate using a thermal evaporator and taped together. The existence of PVDF was verified by the Fourier transform infrared spectroscopy (FTIR) examinations, which revealed high absorption peaks at 723 cm−1 and 849 cm−1, respectively. The digital storage oscilloscope (DSO) and pico- ammeter (10–12 m) measurements of the TENG device’s output voltage and current yielded results of 25V and 8 pA, respectively. Additionally, this study reveals the power density produced and the distinctiveness of this TENG device, both of which are critical to the efficiency and applicability of TENG in a new generation of electronics.</p></abstract><trans-abstract xml:lang="ru"><p>Благодаря стремительному совершенствованию технологий сбора энергии были созданы уникальные механические устройства. Однако из-за проблем с энергией исследователи начали создавать новые процедуры и стратегии для хранения как можно большего количества энергии. Нанотехнология уникальна, и она стимулировала изобретение трибоэлектрических наногенераторов (ТЭН), которые используются в качестве источника энергии в носимых устройствах путем преобразования механической энергии в электрическую. В этой статье обсуждается ТЭН, который представляет собой трибоэлектрический материал, изготовленный из поливинилиденфторида (ПВДФ) и алюминия (Al). ТЭН может быть изготовлен двумя способами: только из ПВДФ или из ПВДФ, легированного йодом, причем в обоих случаях Al остается одинаковым. Несмотря на то, что материалы являются трибоэлектрическими, для прикрепления к материалам используются алюминиевые электроды, которые создаются на пластиковой подложке с помощью термического испарителя и склеиваются вместе. Существование PVDF было подтверждено исследованиями с помощью инфракрасной спектроскопии с преобразованием Фурье (FTIR), которые выявили высокие пики поглощения при 723 см-1 и 849 см-1 соответственно. Цифровым запоминающим осциллографом (ЦЗО) и пикоамперметром (10-12 м) измерения выходного напряжения и тока ТЭН-устройства дали результаты 25 В и 8 пА соответственно. Кроме того, это исследование раскрывает производимую плотность мощности и отличительные особенности этого устройства TENG, оба из которых имеют решающее значение для эффективности и применимости TENG в электронике нового поколения.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>Легирование</kwd><kwd>Йод</kwd><kwd>Поливинилиденфторид (ПВДФ)</kwd><kwd>Полиэтилентерефталат (ПЭТФ)</kwd><kwd>Трибоэлектрический наногенератор (ТЭН)</kwd></kwd-group><kwd-group xml:lang="en"><kwd>doping</kwd><kwd>iodine</kwd><kwd>Polyvinylidene fluoride (PVDF)</kwd><kwd>Polyethylene terephthalate (PET)</kwd><kwd>Triboelectric Nanogenerator (TENG)</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Tayyab M., Wang J., Wang J., Maksutoglu M., Yu H., Sun G., Yildiz F., Eginligil M., Huang W. 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