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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2023-14-1-86-88</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-192</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHYSICS</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИКА</subject></subj-group></article-categories><title-group><article-title>Electrical properties of “metal-carbon film” contact</article-title><trans-title-group xml:lang="ru"><trans-title>Электрические свойства контакта “металл-углеродная пленка”</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-1258-2434</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Шалаев</surname><given-names>Р. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Shalayev</surname><given-names>R. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Донецк.</p></bio><bio xml:lang="en"><p>Rostyslav V. Shalayev,</p><p>72, R. Luxembourg str., Donetsk, 283050. </p></bio><email xlink:type="simple">sharos@donfti.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Изотов</surname><given-names>А. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Izotov</surname><given-names>A. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Донецк.</p></bio><bio xml:lang="en"><p>Anatoliy I. Izotov,</p><p>72, R. Luxembourg str., Donetsk, 283050. </p></bio><email xlink:type="simple">izotov.anatoli@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Сироткин</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Syrotkin</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Донецк.</p></bio><bio xml:lang="en"><p>Vladimir V. Syrotkin,</p><p>72, R. Luxembourg str., Donetsk, 283050.</p></bio><email xlink:type="simple">vladir.52@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>Galkin Donetsk Institute for Physics and Engineering</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>05</day><month>06</month><year>2025</year></pub-date><volume>14</volume><issue>1</issue><fpage>86</fpage><lpage>88</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Shalayev R.V., Izotov A.I., Syrotkin V.V., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Шалаев Р.В., Изотов А.И., Сироткин В.В.</copyright-holder><copyright-holder xml:lang="en">Shalayev R.V., Izotov A.I., Syrotkin V.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/192">https://nanojournal.ifmo.ru/jour/article/view/192</self-uri><abstract><p>Magnetron sputtering was used to obtain carbon films on of metal substrates of two types: titanium and tool chromium steel. The temperature dependence of the resistance of the films, which has a semiconductor character, has been studied. The current-voltage characteristics of the metal-carbon film contact were determined, which indicate the presence of the Schottky barrier junction.</p></abstract><trans-abstract xml:lang="ru"><p>Методом магнетронного распыления получены графитоподобные пленки на двух видах металлических подложек: титан и инструментальная хромистая сталь. Изучена температурная зависимость сопротивления пленок, которая носит полупроводниковый характер. Также получены вольт-амперные характеристики контакта металл-графитоподобная пленка, которые свидетельствуют о наличии перехода с барьером Шоттки.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>углеродная пленка</kwd><kwd>магнетронное распыление</kwd><kwd>контакт металл-полупроводник</kwd><kwd>барьер Шоттки</kwd></kwd-group><kwd-group xml:lang="en"><kwd>carbon film</kwd><kwd>magnetron sputtering</kwd><kwd>metal-semiconductor contact</kwd><kwd>Schottky barrier</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Henish H.K. Semiconductor rectifying contacts. Oxford, Oxford University Press, 1957, 372 p.</mixed-citation><mixed-citation xml:lang="en">Henish H.K. Semiconductor rectifying contacts. 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