najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2023-14-1-127-131najo-204Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХTime of transition processes in a CdS-CIGS structural solar cells in the short-wave part of the absorption spectrum at different loading resistancesВремя переходных процессов в структурных солнечных элементах CdS-CIGS в коротковолновой части спектра поглощения при различных сопротивлениях нагрузкеhttps://orcid.org/0000-0003-3157-9038КабуловР. Р.KabulovR. R.

Рустам Рашидович Кабулов,

Ташкент.

Rustam R. Kabulov,

2 “B”, Ch. Aytmatov str., Tashkent, 100084.

krr1982@bk.ruhttps://orcid.org/0000-0003-0045-9201АкбаровФ А.AkbarovF. A.

Фаррух Анвар угли Акбаров,

Ташкент.

Farrux A. Akbarov,

 2 “B”, Ch. Aytmatov str., Tashkent, 100084, Uzbekistan;

2A, University str. Tashkent, 100095.

farrux1927@mail.ruhttps://orcid.org/0000-0002-0048-3175АлимовА. А.AlimovA. A.

Анвар Акбарович Алимов,

Ташкент.

Anvar A. Alimov,

2A, University str. Tashkent, 100095.

alimovanvar62@gmail.comPhysical-Technical Institute Academy of Sciences of the Republic of UzbekistanUzbekistanPhysical-Technical Institute Academy of Sciences of the Republic of Uzbekistan; Tashkent State Technical University named after Islam KarimovUzbekistanTashkent State Technical University named after Islam KarimovUzbekistan202305062025141127131Copyright © Kabulov R.R., Akbarov F.A., Alimov A.A., 20252025Кабулов Р.Р., Акбаров Ф.А., Алимов А.А.Kabulov R.R., Akbarov F.A., Alimov A.A.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/204

The work is devoted to the study of the influence of solar radiation in the short-wave part of the absorption spectrum at different loading resistances on the lifetime (τ) of minority photogenerated charge carriers (∆n) of a thin-film solar cell based on Cu(In,Ga)Se2. It was found that with an increase in the generated photocurrent and the magnitude of the load resistance the lifetime of minority photogenerated charge carriers of a thin-film solar cell based on Cu(In,Ga)Se2 increases. The obtained experimental results are interpreted by the charge exchange of defect states, which capture the injected and photogenerated electrons, as a result of which they cease to be active recombination centers.

Работа посвящена исследованию влияния солнечного излучения в коротковолновой части спектра поглощения при различных сопротивлениях нагрузки на время жизни (τ) неосновных фотогенерированных носителей заряда (Δn) тонкопленочного солнечного элемента на основе Cu(InGa)Se2. Установлено, что с увеличением генерируемого фототока и величины сопротивления нагрузки увеличивается время жизни неосновных фотогенерированных носителей заряда тонкопленочного солнечного элемента на основе Cu(InGa)Se2. Полученные экспериментальные результаты интерпретируются перезарядкой дефектных состояний, которые захватывают инжектированные и фотогенерированные электроны, в результате чего они перестают быть активными центрами рекомбинации. 

CIGSсолнечный элементмонохроматическое излучениекоэффициент поглощениявремя жизнифотогенерированные носители заряданеосновные носители зарядаCIGSsolar cellmonochromatic radiationabsorption coefficientlifetimephotogenerated charge carriersminority charge carriersThe authors express their gratitude to the management, employees of the Physicaltechnical Institute Academy of Science of the Republic of Uzbekistan for technical assistance in performing experimental research, discussing the results of these scientific studies and writing an article, and also express their gratitude to the employees of the Tashkent State Technical University who took an active part in discussing the results of our scientific research.ReferencesSze S.M. and Kwok K.Ng. Physics of Semiconductor Devices. New Jersey, John Willey and Sons, Inc., 2007, p. 763.Sze S.M. and Kwok K.Ng. Physics of Semiconductor Devices. New Jersey, John Willey and Sons, Inc., 2007, p. 763.Kobulov R.R., Matchanov N.A., Ataboev O.K., Akbarov F.A. Solar cells based on Cu(In, Ga)Se2. Applied Solar Energy, 2019, 55(2), p. 83–90.Kobulov R.R., Matchanov N.A., Ataboev O.K., Akbarov F.A. Solar cells based on Cu(In, Ga)Se2. Applied Solar Energy, 2019, 55(2), p. 83–90.Photovoltaic Report, Freiburg: Fraunhofer Institute for Solar Energy System, 2019. www.ise.fraunhofer.de.Photovoltaic Report, Freiburg: Fraunhofer Institute for Solar Energy System, 2019. www.ise.fraunhofer.de.Mirsagatov Sh.A., Kabulov R.R., and Makhmudov M.A. Injection photodiode based on an n-CdS/p-CdTe heterostructure. Semiconductors, 2013, 47, P. 825–830.Mirsagatov Sh.A., Kabulov R.R., and Makhmudov M.A. Injection photodiode based on an n-CdS/p-CdTe heterostructure. Semiconductors, 2013, 47, P. 825–830.Ataboev O.K., Terukov E.I., Matchanov N.A. Heterojunction thin-film solar cell based on single-crystalline silicon. Euroasian Journal of Semiconductors Science and Engineering, 2020, 2, P. 62–65.Ataboev O.K., Terukov E.I., Matchanov N.A. Heterojunction thin-film solar cell based on single-crystalline silicon. Euroasian Journal of Semiconductors Science and Engineering, 2020, 2, P. 62–65.Kobulov R.R., Matchanov N.A., Ataboev O.K. Morphological and photoelectrical characteristics of the polycrystalline SnO2-CdS/Cu(In,Ga)Se2Ag thin film. Applied Solar Energy, 2018, 54(2), P. 91–94.Kobulov R.R., Matchanov N.A., Ataboev O.K. Morphological and photoelectrical characteristics of the polycrystalline SnO2-CdS/Cu(In,Ga)Se2Ag thin film. Applied Solar Energy, 2018, 54(2), P. 91–94.Brus V.V., Ilashchuk M.I., Khomyak V.V., Kovalyuk Z.D., Maryanchuk P.D., Ulyanytsky K.S. Electrical properties of anisotype n-CdZnO/p-CdTe heterojunctions. Semiconductors, 2012, 46, P. 1152.Brus V.V., Ilashchuk M.I., Khomyak V.V., Kovalyuk Z.D., Maryanchuk P.D., Ulyanytsky K.S. Electrical properties of anisotype n-CdZnO/p-CdTe heterojunctions. Semiconductors, 2012, 46, P. 1152.Kobulov R.R., Makhmudov M.A., Gerasimenko S.Y., Ataboev O.K. Investigation of composition and current transport mechanism in polycrystalline thin film ultra violet Au–ZnxCd1−xS–Mo-structure with narrow spectrum of photosensitivity. Applied Solar Energy, 2017, 53(2), P. 123– 125.Kobulov R.R., Makhmudov M.A., Gerasimenko S.Y., Ataboev O.K. Investigation of composition and current transport mechanism in polycrystalline thin film ultra violet Au–ZnxCd1−xS–Mo-structure with narrow spectrum of photosensitivity. Applied Solar Energy, 2017, 53(2), P. 123– 125.Kabulov R.R. Features of the buffer layer ZnxCd1−xS for use in thin-film solar cells. Applied Solar Energy, 2020, 56(5), P. 383–387.Kabulov R.R. Features of the buffer layer ZnxCd1−xS for use in thin-film solar cells. Applied Solar Energy, 2020, 56(5), P. 383–387.Leiderman A.Yu., Kashaev M.M. Lifetime specifics of nonequilibrum carriers in photoelectric cells based on gallium arsenide obtained via the Czochralski method. Applied Solar Energy, 2013, 49(4), P. 244–247.Leiderman A.Yu., Kashaev M.M. Lifetime specifics of nonequilibrum carriers in photoelectric cells based on gallium arsenide obtained via the Czochralski method. Applied Solar Energy, 2013, 49(4), P. 244–247.Kobulov R.R., Maxmudov M.A., Gerasimenko S.Yu. Fabrication and investigation of ultravialet Au-ZnxCd1−xS–Mo-structures. Applied Solar Energy, 2017, 53(1), P. 10–12.Kobulov R.R., Maxmudov M.A., Gerasimenko S.Yu. Fabrication and investigation of ultravialet Au-ZnxCd1−xS–Mo-structures. Applied Solar Energy, 2017, 53(1), P. 10–12.

The authors declare that there are no conflicts of interest present.