najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2022-13-2-148-155najo-226Research ArticleСтатьиImpact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFETAtamuratovA. E.atabek.atamuratov@yahoo.comJabbarovaB. O.bahorbahor1989@mail.ruKhalilloevM. M.x-mahkam@mail.ruYusupovA. .ayus@mail.ruSivasankaranK. .ksivasankaran@vit.ac.inChedjouJ. C.jean.chedjou@aau.atUrgech State UniversityRussian FederationTashkent University of Information TechnologiesRussian FederationVellore Institute of TechnologyRussian FederationUniversity of KlagenfurtRussian Federation202206062025132148155Copyright © Atamuratov A.E., Jabbarova B.O., Khalilloev M.M., Yusupov A..., Sivasankaran K..., Chedjou J.C., 20252025Atamuratov A.E., Jabbarova B.O., Khalilloev M.M., Yusupov A..., Sivasankaran K..., Chedjou J.C.Atamuratov A.E., Jabbarova B.O., Khalilloev M.M., Yusupov A..., Sivasankaran K..., Chedjou J.C.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/226

We study the impact of channel shape, back oxide, and gate oxide on the self-heating performance in nanoscale junctionless Fin Field Effect Transistor through numerical simulation. The role of back oxide and gate oxide layers in setting the channel temperature is compared. Simulation results show that in the case of hafnium oxide (HfO2) as the gate oxide and silicon dioxide (SiO2) as the back oxide, the main role in setting the channel temperature corresponds to the base width of the channel that is in contact with the back oxide layer.

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The authors declare that there are no conflicts of interest present.