najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2022-13-6-621-627najo-275Research ArticleСтатьиFeatures of tunneling current-voltage characteristics in dielectric films with Ni, Fe and Co nanoparticles, investigated by conductive AFM and within the framework of the theory of 1D-dissipative tunnelingОсобенности туннельных вольт-амперных характеристик в диэлектрических пленках с наночастицами Ni, Fe и Co, исследованные методом проводящей атомной силовой микроскопии (АСМ) и в рамках теории 1D - диссипативного туннелированияhttps://orcid.org/0000-0003-4348-0000СеменовМ. Б.SemenovM. B.misha29.02.1@gmail.comhttps://orcid.org/0000-0002-3522-8326КревчикВ. Д.KrevchikV. D.noemail@neicon.ruhttps://orcid.org/0000-0001-5231-5037ФилатовД. О.FilatovD. O.dmitry_filatov@inbox.ruhttps://orcid.org/0000-0002-3247-8178АнтоновД. А.AntonovD. A.antonov@phys.unn.ruhttps://orcid.org/0000-0001-6007-5598ШороховА. В.ShorokhovA. V.alex.shorokhov@gmail.comhttps://orcid.org/0000-0002-6309-4732ШкуриновА. П.ShkurinovA. P.ashkurinov@gmail.comhttps://orcid.org/0000-0002-3620-6903ОжередовИ. А.OzheredovI. A.ozheredov@physics.msu.ruКревчикП. В.KrevchikP. V.noemail@neicon.ruРазумовА. В.RazumovA. V.razumov_alex@mail.ruКотовА. С.KotovA. S.alexey_600sl@mail.ruАнтоновИ. С.AntonovI. S.noemail@neicon.ruСеменовИ. М.SemenovI. M.semenovivm@gmail.comПензенский государственный университетРоссияPenza State UniversityRussian FederationНижегородский государственный университет им. Н.И. ЛобачевскогоРоссияLobachevsky State University of Nizhni NovgorodRussian Federationинститут проблем лазерных и информационных технологий РАНРоссияInstitute for Problems of Laser and Information Technologies RASRussian Federation202206062025136621627Copyright © Semenov M.B., Krevchik V.D., Filatov D.O., Antonov D.A., Shorokhov A.V., Shkurinov A.P., Ozheredov I.A., Krevchik P.V., Razumov A.V., Kotov A.S., Antonov I.S., Semenov I.M., 20252025Семенов М.Б., Кревчик В.Д., Филатов Д.О., Антонов Д.А., Шорохов А.В., Шкуринов А.П., Ожередов И.А., Кревчик П.В., Разумов А.В., Котов А.С., Антонов И.С., Семенов И.М.Semenov M.B., Krevchik V.D., Filatov D.O., Antonov D.A., Shorokhov A.V., Shkurinov A.P., Ozheredov I.A., Krevchik P.V., Razumov A.V., Kotov A.S., Antonov I.S., Semenov I.M.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/275

In this work, we have experimentally investigated the features of tunneling current-voltage (I-V) curves in the case of 1D-dissipative tunneling in the limit of weak dissipation for various both synthesized (and in the process of synthesis) metallic nanoparticles (NPs) (Ni, Co, Fe) in a combined atomic force microscope/scanning tunneling microscope (AFM/STM) system in an external electric field. It is shown that for individual tunneling I-V curves, a single peak is observed at one of the polarities. In the process of synthesizing metallic nanoparticles with a change in polarity, instead of nanoclusters, it is possible to synthesize toroidal structures (shown by the example of “growing” Ni-NPs). The investigated effects of 1D-dissipative tunneling made it possible to develop the author’s method of controlled growth of quantum dots in a combined AFM/STM system. A qualitative agreement was obtained between the experimental and theoretical results, which allows us to assume the possibility of experimental observation of the macroscopic dissipative tunneling effects and thereby confirm the hypothesis expressed in the pioneering works of A. J. Leggett, A. I. Larkin, Yu. N. Ovchin- nikov and other authors.

В настоящей работе экспериментально исследованы особенности туннельных вольт - амперных характеристик (ВАХ) при 1D-диссипативном туннелировании в пределе слабой диссипации для различных как синтезированных (так и в процессе синтеза) металлических наночастиц (НЧ) Ni, Co и Fe в системе совмещенного атомного силового и сканирующего туннельного микроскопа (АСМ/СТМ) во внешнем электрическом поле. Показано, что для отдельных туннельных ВАХ наблюдается единичный пик при одной из полярностей. В процессе синтеза металлических наночастиц с изменением полярности вместо нанокластеров можно синтезировать тороидальные структуры (показано на примере «растущих» Ni-НЧ). Исследование эффектов 1D-диссипативного туннелирования позволило разработать авторский метод управляемого роста наночастиц в системе совмещенного атомного силового и сканирующего туннельного микроскопа (АСМ/СТМ). Получено качественное совпадение экспериментальных и теоретических результатов, что позволяет предположить возможность экспериментального наблюдения макроскопических диссипативных туннельных эффектов и тем самым подтвердить гипотезу, высказанную в «пионерских» работах Нобелевского лауреата Э.Дж. Леггета, академика РАН А.И. Ларкина, профессора Ю.Н. Овчинникова (ИТФ РАН им. Л.Д. Ландау) и других авторов.

metal nanoparticlesdissipative tunnelingconductive AFMReferencesBendersky V.A., Leggett A.J., Ovchinnikov Yu.N., Krevchik V.D., Semenov M.B., Dahnovsky Yu.I, Gorshkov O.N., Filatov D.O., et al. Controlled dissipative tunneling. Tunnel transport in low-dimensional systems. Ed. A.J. Leggett. Fizmatlit, Moscow, 2011-2012, 496 pp.Bendersky V.A., Leggett A.J., Ovchinnikov Yu.N., Krevchik V.D., Semenov M.B., Dahnovsky Yu.I, Gorshkov O.N., Filatov D.O., et al. Controlled dissipative tunneling. Tunnel transport in low-dimensional systems. Ed. A.J. Leggett. Fizmatlit, Moscow, 2011-2012, 496 pp.Kusmartsev F.V, Krevchik V.D, Semenov M.B, Filatov D.O, Shorokhov A.V., Krevchik P.V., et al. Phonon assisted resonant tunnelling and its phonons control. JETP Letters, 2016, 104, P. 392-397.Kusmartsev F.V, Krevchik V.D, Semenov M.B, Filatov D.O, Shorokhov A.V., Krevchik P.V., et al. Phonon assisted resonant tunnelling and its phonons control. JETP Letters, 2016, 104, P. 392-397.Semenov M.B., Krevchik V.D., Filatov D.O., Shorokhov A.V., Shkurinov A.P., Ozheredov I.A., Krevchik P.V., Wang Y.H., Lie T.R., Malik A.K., Marychev M.O., Baidus N.V., and Semenov I.M. Dissipative tunneling of electrons in vertically coupled double asymmetric InAs/GaAs(001) quantum dots. Tech. Phys., 2022, 67, P. 115-125.Semenov M.B., Krevchik V.D., Filatov D.O., Shorokhov A.V., Shkurinov A.P., Ozheredov I.A., Krevchik P.V., Wang Y.H., Lie T.R., Malik A.K., Marychev M.O., Baidus N.V., and Semenov I.M. Dissipative tunneling of electrons in vertically coupled double asymmetric InAs/GaAs(001) quantum dots. Tech. Phys., 2022, 67, P. 115-125.Caldeira A.O., Leggett A.J. Quantum tunnelling in a dissipative system. Ann. of Phys., 1983, 149 (2), P. 374-456.Caldeira A.O., Leggett A.J. Quantum tunnelling in a dissipative system. Ann. of Phys., 1983, 149 (2), P. 374-456.Benderskii V.A., Vetoshkin E.V., Kats E.I., Trommsdorff H.P.Competing tunneling trajectories in a two-dimensional potential with variable topology as a model for quantum bifurcations, Phys. Rev. E, 2003, 67, 026102.Benderskii V.A., Vetoshkin E.V., Kats E.I., Trommsdorff H.P.Competing tunneling trajectories in a two-dimensional potential with variable topology as a model for quantum bifurcations, Phys. Rev. E, 2003, 67, 026102.Larkin A.I., Ovchinnikov Yu.N. Decay of supercurrent in tunnel junctions. Phys. Rev. B, 1983, 28, P. 6281-6285.Larkin A.I., Ovchinnikov Yu.N. Decay of supercurrent in tunnel junctions. Phys. Rev. B, 1983, 28, P. 6281-6285.Ivlev B.I., Ovchinnikov Yu.N. Decay of metastable states in a situation with close-lying tunneling trajectories. Sov. Phys. JETP, 1987, 66 (2), P. 378-383.Ivlev B.I., Ovchinnikov Yu.N. Decay of metastable states in a situation with close-lying tunneling trajectories. Sov. Phys. JETP, 1987, 66 (2), P. 378-383.Dakhnovsky Yu.I., Ovchinnikov A.A., Semenov M.B. Low-temperature chemical reactions considered as dissipative tunnel systems. Sov. Phys. JETP, 1987, 65 (3), P. 541-547.Dakhnovsky Yu.I., Ovchinnikov A.A., Semenov M.B. Low-temperature chemical reactions considered as dissipative tunnel systems. Sov. Phys. JETP, 1987, 65 (3), P. 541-547.Aringazin A.K., Dahnovsky Yuri, Krevchik V.D., Semenov M.B., Ovchinnikov A.A., Yamamoto K. Two-dimensional tunnel correlations with dissipation. Phys. Rev. B, 2003, 68, 155426.Aringazin A.K., Dahnovsky Yuri, Krevchik V.D., Semenov M.B., Ovchinnikov A.A., Yamamoto K. Two-dimensional tunnel correlations with dissipation. Phys. Rev. B, 2003, 68, 155426.Ovchinnikov Yu.N. Conductivity of granular metallic film. JETP, 2007, 104, P. 254-257.Ovchinnikov Yu.N. Conductivity of granular metallic film. JETP, 2007, 104, P. 254-257.Dahnovsky Yu., Krevchik V.D., Krivnov V.Ya., Semenov M.B., Yamamoto K., Shorokhov A.V., et al. Transfer processes in low-dimensional systems. UT Research Institute Press, Tokyo: 2005, 690 pp.Dahnovsky Yu., Krevchik V.D., Krivnov V.Ya., Semenov M.B., Yamamoto K., Shorokhov A.V., et al. Transfer processes in low-dimensional systems. UT Research Institute Press, Tokyo: 2005, 690 pp.Caldeira A.O., Leggett A.J. Influence of dissipation on quantum tunneling in macroscopic systems. Phys. Rev. Lett., 1981, 46 (4), P. 211-214.Caldeira A.O., Leggett A.J. Influence of dissipation on quantum tunneling in macroscopic systems. Phys. Rev. Lett., 1981, 46 (4), P. 211-214.Larkin A.I., Ovchinnikov Yu.N. Quantum tunneling with dissipation. JETP Letters, 1983, 37 (7), P. 382-385.Larkin A.I., Ovchinnikov Yu.N. Quantum tunneling with dissipation. JETP Letters, 1983, 37 (7), P. 382-385.Dakhnovskii Yu.I., Horia M. Absolute negative resistance in double-barrier heterostructures in a strong laser field. Phys. Rev. B, 1995, 51, P. 4193-4199.Dakhnovskii Yu.I., Horia M. Absolute negative resistance in double-barrier heterostructures in a strong laser field. Phys. Rev. B, 1995, 51, P. 4193-4199.Zhukovsky V.Ch, Dakhnovskii Yu.I., Gorshkov O.N., Krevchik V.D, Semenov M.B., Smirnov Yu.G., Chuprunov E.V., Rudin V.A., Skibitskaya N.Yu., Krevchik P.V., Filatov D.O., Antonov D.A., Lapshina M.A., Yamamoto K., Shenina M.E. Observed two-dimensional tunnel bifurcations in an external electric field. Moscow University Physics Bulletin, 2009, 64, P. 475-480.Zhukovsky V.Ch, Dakhnovskii Yu.I., Gorshkov O.N., Krevchik V.D, Semenov M.B., Smirnov Yu.G., Chuprunov E.V., Rudin V.A., Skibitskaya N.Yu., Krevchik P.V., Filatov D.O., Antonov D.A., Lapshina M.A., Yamamoto K., Shenina M.E. Observed two-dimensional tunnel bifurcations in an external electric field. Moscow University Physics Bulletin, 2009, 64, P. 475-480.Zhukovsky V.Ch., Gorshkov O.N, Krevchik V.D, Semenov M.B, Groznaya E.V., Filatov D.O., Antonov D.A. Controllable dissipative tunneling in an external electric field. Moscow University Physics Bulletin, 2009, 64, P. 27-32.Zhukovsky V.Ch., Gorshkov O.N, Krevchik V.D, Semenov M.B, Groznaya E.V., Filatov D.O., Antonov D.A. Controllable dissipative tunneling in an external electric field. Moscow University Physics Bulletin, 2009, 64, P. 27-32.Filatov D., Guseinov D., Antonov I., Kasatkin A., Gorshkov O. Imaging and spectroscopy of Au nanoclusters in yttria-stabilized zirconia films using ballistic electron/hole emission microscopy. RSC Adv., 2014, 4, P. 57337-57342.Filatov D., Guseinov D., Antonov I., Kasatkin A., Gorshkov O. Imaging and spectroscopy of Au nanoclusters in yttria-stabilized zirconia films using ballistic electron/hole emission microscopy. RSC Adv., 2014, 4, P. 57337-57342.Ledentsov N.N., Ustinov V.M., Shchukin V.A., Kop’ev P.S., Alferov Zh.I., Bimberg D. Quantum dot heterostructures: fabrication, properties, lasers (Review). Semiconductors, 1998, 32 (4), P. 343-455.Ledentsov N.N., Ustinov V.M., Shchukin V.A., Kop’ev P.S., Alferov Zh.I., Bimberg D. Quantum dot heterostructures: fabrication, properties, lasers (Review). Semiconductors, 1998, 32 (4), P. 343-455.Stier O., Grundmann M., Bimberg D. Electronic and optical properties of strained quantum dots modeled by 8-band k·p theory. Phys. Rev. B, 1999, 59, P. 5688-5703.Stier O., Grundmann M., Bimberg D. Electronic and optical properties of strained quantum dots modeled by 8-band k·p theory. Phys. Rev. B, 1999, 59, P. 5688-5703.Karpovich I.A., Zvonkov B.N., Baidus’ N.V., Tikhov S.V., Filatov D.O. Tuning the energy spectrum of the InAs/GaAs quantum dot structures by varying the thickness and composition of a thin double GaAs/InGaAs cladding layer. Trends in Nanotechnology Research, Ed. by Dirote E.V. Nova Science Publishers, New York, 2004. P. 173-208.Karpovich I.A., Zvonkov B.N., Baidus’ N.V., Tikhov S.V., Filatov D.O. Tuning the energy spectrum of the InAs/GaAs quantum dot structures by varying the thickness and composition of a thin double GaAs/InGaAs cladding layer. Trends in Nanotechnology Research, Ed. by Dirote E.V. Nova Science Publishers, New York, 2004. P. 173-208.Louis A.A., Sethna J.P. Atomic tunneling from a scanning-tunneling or atomiforce microscope tip: Dissipative quantum effects from phonons. Phys. Rev. Lett., 1995, 74 (8), P. 1363-1366.Louis A.A., Sethna J.P. Atomic tunneling from a scanning-tunneling or atomiforce microscope tip: Dissipative quantum effects from phonons. Phys. Rev. Lett., 1995, 74 (8), P. 1363-1366.Ovchinnikov A.A., Dakhnovsky Yu.I., Krevchik V.D., Semenov M.B., Aringazin A.K. Principles of controlled modulation of low-dimensional structures. UNTsDO, Moscow, 2003, 510 pp. (in Russian)Ovchinnikov A.A., Dakhnovsky Yu.I., Krevchik V.D., Semenov M.B., Aringazin A.K. Principles of controlled modulation of low-dimensional structures. UNTsDO, Moscow, 2003, 510 pp. (in Russian)Krevchik V.D., Razumov A.V., Semenov M.B., Uvaysov S.U., Kulagin V.P., Komada P., Smailova S., Mussabekova A. Influence of an external electric field and dissipative tunneling on recombination radiation in quantum dots. Sensors, 2022, 22, 1300.Krevchik V.D., Razumov A.V., Semenov M.B., Uvaysov S.U., Kulagin V.P., Komada P., Smailova S., Mussabekova A. Influence of an external electric field and dissipative tunneling on recombination radiation in quantum dots. Sensors, 2022, 22, 1300.Antonov D.A., Novikov A.S., Filatov D.O., Kruglov A.V., Antonov I.N., Zdoroveishchev A.V., Gorshkov O.N. Formation of nanosized Ni ferromagnetic filaments in ZrO2(Y) films. Tech. Phys. Lett., 2021, 47, P. 539-541.Antonov D.A., Novikov A.S., Filatov D.O., Kruglov A.V., Antonov I.N., Zdoroveishchev A.V., Gorshkov O.N. Formation of nanosized Ni ferromagnetic filaments in ZrO2(Y) films. Tech. Phys. Lett., 2021, 47, P. 539-541.Antonov D.A., Filatov D.O., Novikov A.S., Kruglov A.V., Antonov I.N., Zdoroveyshchev A.V., Gorshkov O.N. An atomic force microscopics study of resistive switching resonance activation in ZrO2(Y) films. Tech. Phys., 2020, 65, P. 1744-1747.Antonov D.A., Filatov D.O., Novikov A.S., Kruglov A.V., Antonov I.N., Zdoroveyshchev A.V., Gorshkov O.N. An atomic force microscopics study of resistive switching resonance activation in ZrO2(Y) films. Tech. Phys., 2020, 65, P. 1744-1747.

The authors declare that there are no conflicts of interest present.