najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2023-14-5-601-605najo-298Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХGrowth of nanotextured thin films of GaInAsP and GaInAsSbBi solid solutions on GaP substrates by pulsed laser depositionРост твердых растворов GaInAsP и GaInAsSbBi на подложках GaP методом импульсного лазерного напыленияhttps://orcid.org/0000-0002-7976-9597ПащенкоА. С.PashchenkoA. S.

Пащенко Александр Сергеевич

Alexander S. Pashchenko

Chekhov Ave., 41, Rostov-on-Don, 344006

Pushkina st., 1, Stavropol, 355017

semicondlab@ya.ruhttps://orcid.org/0000-0003-3153-696XДевицкийО. В.DevitskyO. V.

Oleg V. Devitsky

Chekhov Ave., 41, Rostov-on-Don, 344006

Pushkina st., 1, Stavropol, 355017

v2517@rambler.ruhttps://orcid.org/0000-0002-5534-9694СергеевичЛ. Л.LuninL. S.

Лунин Леонид Сергеевич

Leonid S. Lunin

Chekhov Ave., 41, Rostov-on-Don, 344006

Pushkina st., 1, Stavropol, 355017

lunin_LS@mail.ruhttps://orcid.org/0009-0004-5761-3999ЛунинаМ. Л.LuninaM. L.

Лунина Марина Леонидовна

Marina L. Lunina

Chekhov Ave., 41, Rostov-on-Don, 344006

MarinaSchaz@rambler.ruhttps://orcid.org/0000-0003-3698-1835ПащенкоО. С.PashchenkoO. S.

Пащенко Ольга Сергеевна

Olga S. Pashchenko

Chekhov Ave., 41, Rostov-on-Don, 344006

paschenko.o.s@mail.ruhttps://orcid.org/0000-0001-6232-3217ДанилинаЭ. М.DanilinaE. M.

Данилина Элеонора Михайловна

Eleonora M. Danilina

Chekhov Ave., 41, Rostov-on-Don, 344006

el.m.danilina@gmail.comFederal Research Center Southern Scientific Center of the Russian Academy of Sciences; North Caucasian Federal UniversityRussian FederationFederal Research Center Southern Scientific Center of the Russian Academy of SciencesRussian Federation202308062025145601605Copyright © Pashchenko A.S., Devitsky O.V., Lunin L.S., Lunina M.L., Pashchenko O.S., Danilina E.M., 20252025Пащенко А.С., Девицкий О.В., Сергеевич Л.Л., Лунина М.Л., Пащенко О.С., Данилина Э.М.Pashchenko A.S., Devitsky O.V., Lunin L.S., Lunina M.L., Pashchenko O.S., Danilina E.M.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/298

GaInAsP and GaInAsSbBi solid solutions were grown on GaP (111) substrates by pulsed laser deposition using a laser fluence of 2.3 J/cm2. Energy Dispersive X-ray microanalysis, atomic force microscopy, and Raman spectroscopy were used for analysis of the elemental composition and study of the surface morphology and chemical bonds of the obtained solid solutions. It was found that at constant growth temperature and the fluence of 2.3 J/cm2, the elemental composition of the film has a significant effect on the growth kinetics. Surface-active elements (Sb and Bi) in the composition of the solid solution lead to a change in the surface diffusion of In and Ga, which is accompanied by a decrease in roughness. It was established that the films growth in the Volmer–Weber mode. The grown films are nanotextured with a predominant orientation in the direction of growth (111).

Твердые растворы GaInAsP и GaInAsSbBi были выращены на подложках GaP (111) методом импульсного лазерного напыления с плотностью энергии лазерного излучения 2,3 Дж/см2. Для определения элементного состава и изучения морфологии поверхности и химических связей полученных твердых растворов использовали энергодисперсионный рентгеновский микроанализ, атомно-силовую микроскопию и спектроскопию комбинационного рассеяния. Установлено, что при постоянной температуре роста и плотности энергии лазерного излучения 2,3 Дж/см2 элементный состав пленки оказывает существенное влияние на кинетику роста. Поверхностно-активные элементы (Sb и Bi) в составе твердого раствора приводят к изменению поверхностной диффузии In и Ga, что сопровождается уменьшением шероховатости. Установлено, что пленки растут в режиме Фольмера–Вебера.

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The authors declare that there are no conflicts of interest present.