najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2025-16-3-274-281najo-314Research ArticlePHYSICSФИЗИКАTheoretical study of the effective g-factor of Cd1-xMnxTe quantum wire under the combined effects of the applied magnetic field, spin-orbit coupling, and exchangeТеоретическое исследование эффективного g-фактора квантовой проволоки Cd1-xMnxTe при комбинированном воздействии приложенного магнитного поля, спин-орбитальной связи и обменных эффектовhttps://orcid.org/0000-0002-1392-3192ЭльсаидМ.ElsaidM.

Mohammad Elsaid

mkelsaid@najah.eduhttps://orcid.org/0000-0002-6919-3539ДалиахД.DahliahD.

Diana Dahliah

diana.dahliah@najah.eduhttps://orcid.org/0000-0002-6518-6470ШаерА.ShaerA.

Ayham Shaer

ayham.shaer@najah.eduhttps://orcid.org/0000-0002-3738-5851АлиМ.AliM.

Mahmoud Ali

mahmoud.ali@najah.eduDepartment of Physics, An-Najah National UniversityPalestinian Territory, Occupied202529062025163274281Copyright © Elsaid M., Dahliah D., Shaer A., Ali M., 20252025Эльсаид М., Далиах Д., Шаер А., Али М.Elsaid M., Dahliah D., Shaer A., Ali M.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/314

In this paper, the energy formula for charge carrier (e) confined in a diluted magnetic semiconductor (DMS) quantum well QW made from Cd1􀀀xMnxTe is generated and utilized to calculate the Density of States (DOS) and the Lande g-factor. The Landau levels in a quantum wire that is placed in uniform magnetic field along its axis, taking into account the presence of Rashba spin-orbit interaction and exchange effect, are explored. These effects have altered the DOS and the Landau levels. The electron g-factor for the lowest state is explored. Our results show that the g-factor is strongly affected by the combined effects of magnetic field and Rashba spin-orbit interaction strengths. The g-factor can vary in a wide range of expands for the bulk value of 2 up to 300, which makes it a good candidate for spintronic applications.

В этой статье формула энергии для носителя заряда (e), заключенного в квантовой яме разбавленного магнитного полупроводника (DMS) QW, изготовленной из Cd1-xMnxTe, получена и использована для расчета плотности состояний (DOS) и g-фактора Ланде. Исследуются уровни Ландау в квантовой проволоке, помещенной в однородное магнитное поле вдоль ее оси, с учетом наличия спин-орбитального взаимодействия Рашбы и обменного эффекта. Эти эффекты изменили DOS и уровни Ландау. Исследуется g-фактор электрона для самого низкого состояния. Наши результаты показывают, что g-фактор сильно зависит от комбинированных эффектов магнитного поля и величины спин-орбитального взаимодействия Рашбы. G-фактор может изменяться в широком диапазоне значений для объемного значения от 2 до 300, что делает его хорошим кандидатом для спинтронных приложений.

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The authors declare that there are no conflicts of interest present.