najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2025-16-3-282-290najo-315Research ArticleNANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICSНАНОСИСТЕМЫ: ФИЗИКА, ХИМИЯ, МАТЕМАТИКАInfluence of SiC MOSFET design on on-resistance and breakdown voltageВлияние конструкции SiC MOSFET на его сопротивление открытого канала и пробивное напряжениеhttps://orcid.org/0000-0001-5726-630XЧукановаО. Б.ChukanovaO. B.

Olga B. Chukanova

Shokin square, 1, Moscow, Zelenograd, 124498

kukhtuaeva@mail.ruhttps://orcid.org/0000-0002-8218-7774ЦарикК. А.TsarikK. A.

Konstantin A. Tsarik

Shokin square, 1, Moscow, Zelenograd, 124498

tsarikkostya@mail.ruNational Research University of Electronic TechnologyRussian Federation202529062025163282290Copyright © Chukanova O.B., Tsarik K.A., 20252025Чуканова О.Б., Царик К.А.Chukanova O.B., Tsarik K.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/315

To improve the efficiency of circuits including SiC MOSFET, it is necessary to increase their specific currents and reliability, respectively. One needs it to reduce the transistor on-resistance and to increase its breakdown voltage. To achieve these goals, the influences of the transistor’s electrophysical characteristics on its design and technological features have been studied with Sentaurus TCAD. We showed that for increasing the transistor currents, it is necessary to reduce the channel length – the distance between the p-bases of the transistor sources, and to create a JFET region. For the increasing the breakdown voltage of the device, we proposed to increase the doping level of the drift region, and suggested a new transistor design that will allow one to obtain devices with a breakdown voltage up to 2500 V.

Для повышения эффективности схем на основе SiC MOSFET необходимо увеличивать их удельные токи и надежность, соответственно, необходимо уменьшать сопротивление транзистора в открытом состоянии и увеличивать их пробивное напряжение. Для достижения этих целей исследованы зависимости электрофизических характеристик транзистора от его конструктивно-технологических особенностей при помощи Sentaurus TCAD. Показано, что для увеличения токов транзистора необходимо уменьшать длину канала, расстояние между р-базами истоков транзистора и создавать JFET область. Для увеличения пробивного напряжения прибора предложено увеличивать степень легирования области дрейфа, а также предложена новая конструкция транзистора, которая позволит получать приборы с пробивным напряжением различных номиналов до 2500 В.

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The authors declare that there are no conflicts of interest present.