<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2025-16-3-306-310</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-318</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>НАНОСИСТЕМЫ: ФИЗИКА, ХИМИЯ, МАТЕМАТИКА</subject></subj-group></article-categories><title-group><article-title>Effect of electron-phonon interaction on the first excited energy level of a Gaussian GaAs quantum dot</article-title><trans-title-group xml:lang="ru"><trans-title>Эффект электрон-фононного взаимодействия на первом возбужденном уровне энергии гауссовой квантовой точки GaAs</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-8198-2872</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мукхопадхьяй</surname><given-names>С.</given-names></name><name name-style="western" xml:lang="en"><surname>Mukhopadhyay</surname><given-names>S.</given-names></name></name-alternatives><bio xml:lang="en"><p>Soma Mukhopadhyay – Department of Physics</p><p>Mangalpalli, Ibrahimpatnam, Hyderabad 501510, Telangana</p></bio><email xlink:type="simple">soma9r9@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0003-5041-0833</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Видьюллата</surname><given-names>Ч.</given-names></name><name name-style="western" xml:lang="en"><surname>Vidyullatha</surname><given-names>Ch.</given-names></name></name-alternatives><bio xml:lang="en"><p>Ch. Vidyullatha – Department of Humanities and Sciences</p><p>Medchal, Hyderabad 50140, Telangana</p></bio><email xlink:type="simple">vidyullathakodur@gmail.com</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-1949-2012</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Саини</surname><given-names>П.</given-names></name><name name-style="western" xml:lang="en"><surname>Saini</surname><given-names>P.</given-names></name></name-alternatives><bio xml:lang="en"><p>Pooja Saini</p><p>Bhubaneswar, 751005, Odisha</p></bio><email xlink:type="simple">pooja.saini@iopb.res.in</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Малик</surname><given-names>З.</given-names></name><name name-style="western" xml:lang="en"><surname>Malik</surname><given-names>Z.</given-names></name></name-alternatives><bio xml:lang="en"><p>Raleigh, 27606</p></bio><xref ref-type="aff" rid="aff-4"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>CVR college of Engineering</institution><country>India</country></aff><aff xml:lang="en" id="aff-2"><institution>CMR College of Engineering and Technology</institution><country>India</country></aff><aff xml:lang="en" id="aff-3"><institution>Institute of Physics</institution><country>India</country></aff><aff xml:lang="en" id="aff-4"><institution>North Carolina State University</institution><country>United States</country></aff><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>29</day><month>06</month><year>2025</year></pub-date><volume>16</volume><issue>3</issue><fpage>306</fpage><lpage>310</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Mukhopadhyay S., Vidyullatha C., Saini P., Malik Z., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Мукхопадхьяй С., Видьюллата Ч., Саини П., Малик З.</copyright-holder><copyright-holder xml:lang="en">Mukhopadhyay S., Vidyullatha C., Saini P., Malik Z.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/318">https://nanojournal.ifmo.ru/jour/article/view/318</self-uri><abstract><p>The effect of electron-phonon interaction on the first excited state of a three-dimensional polar semiconductor quantum dot with Gaussian confinement is studied using the second-order Rayleigh-Schr¨odinger perturbation theory. An analytical expression for the first excited state polaronic correction is obtained under a plausible approximation. It is shown that this energy depends both on the strength and range of the Gaussian potential. Finally our theory is applied to a GaAs quantum dot and it is shown that the polaronic effect to the first excited level can be significantly large if the size of the dot is small. Since the information of the excited states is important for the study of decoherence phenomena, our results could be useful for quantum information processing.</p></abstract><trans-abstract xml:lang="ru"><p>Эффект электрон-фононного взаимодействия на первом возбужденном состоянии трехмерной полярной полупроводниковой квантовой точки с гауссовым ограничением изучается с использованием теории возмущений Рэлея-Шредингера второго порядка. Аналитическое выражение для поляронной поправки первого возбужденного состояния получено в правдоподобном приближении. Показано, что эта энергия зависит как от силы, так и от диапазона гауссова потенциала. Наконец, наша теория применяется к квантовой точке GaAs, и показано, что поляронный эффект на первом возбужденном уровне может быть значительно большим, если размер точки мал. Поскольку информация о возбужденных состояниях важна для изучения явлений декогеренции, наши результаты могут быть полезны для обработки квантовой информации.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>электрон-фононное взаимодействие</kwd><kwd>первое возбужденное состояние</kwd><kwd>квантовая точка GaAs</kwd></kwd-group><kwd-group xml:lang="en"><kwd>electron-phonon interaction</kwd><kwd>first excited state</kwd><kwd>GaAs quantum dot</kwd></kwd-group><funding-group><funding-statement xml:lang="en">One of the authors (C.V.) gratefully acknowledges the financial support from DST (SR/WOS-A/PM-92/2017).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Ren Z., Shi Z., Feng H., Xu Z., Hao W. Recent Progresses of Polarons: Fundamentals and Roles in Photocatalysis and Photoelectrocatalysis. Adv. 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