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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2025-16-3-325-332</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-321</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>НАНОСИСТЕМЫ: ФИЗИКА, ХИМИЯ, МАТЕМАТИКА</subject></subj-group></article-categories><title-group><article-title>Magnetic structure of domain walls in stressed cylindrical wires</article-title><trans-title-group xml:lang="ru"><trans-title>Магнитная структура доменных границ в напряженных цилиндрических проводах</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-6921-6075</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Чичай</surname><given-names>К. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Chichay</surname><given-names>K. A.</given-names></name></name-alternatives><bio xml:lang="en"><p>Ksenia A. Chichay</p><p>St. Petersburg, 197101</p></bio><email xlink:type="simple">ks.chichay@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-8789-3267</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Лобанов</surname><given-names>И. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Lobanov</surname><given-names>I. S.</given-names></name></name-alternatives><bio xml:lang="en"><p>Igor S. Lobanov</p><p>St. Petersburg, 197101</p></bio><email xlink:type="simple">lobanov.igor@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-9505-0996</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Уздин</surname><given-names>В. М.</given-names></name><name name-style="western" xml:lang="en"><surname>Uzdin</surname><given-names>V. M.</given-names></name></name-alternatives><bio xml:lang="en"><p>Valery M. Uzdin</p><p>St. Petersburg, 197101</p></bio><email xlink:type="simple">v_uzdin@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>Department of Physics, ITMO University</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>29</day><month>06</month><year>2025</year></pub-date><volume>16</volume><issue>3</issue><fpage>325</fpage><lpage>332</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Chichay K.A., Lobanov I.S., Uzdin V.M., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Чичай К.А., Лобанов И.С., Уздин В.М.</copyright-holder><copyright-holder xml:lang="en">Chichay K.A., Lobanov I.S., Uzdin V.M.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/321">https://nanojournal.ifmo.ru/jour/article/view/321</self-uri><abstract><p>We investigate the internal structure and dynamics of transverse domain walls in amorphous, stressed ferromagnetic microwires by comparing two magnetoelastic anisotropy models. In the complete model, all three principal stress components (axial, radial, circumferential) extracted from a realistic stress profile are converted into spatially varying anisotropies; in the reduced model, only the dominant stress component in each radial region is retained. Micromagnetic simulations reveal that the reduced model produces exaggerated peripheral deviations-stronger radial magnetization projections and deeper penetration of the disturbed layer-compared to the complete model. Energy analysis show that omitting non-dominant anisotropy leads to underestimation of domain wall-defect interactions and a sharp, shell-like radial ordering at higher values of surface anisotropy. Furthermore, dissipation calculations based on the Thiele approach indicate that the reduced model overestimates domain wall velocity by up to 50%. These results demonstrate that incorporating the full stress tensor is essential for accurate prediction of both static domain wall profiles and their dynamic response in stressed microwires.</p></abstract><trans-abstract xml:lang="ru"><p>Мы исследуем внутреннюю структуру и динамику поперечных доменных границ в аморфных, напряженных ферромагнитных микропроводах, сравнивая две модели магнитоупругой анизотропии. В полной модели все три основные компоненты напряжений (осевая, радиальная, циркулярная), полученные из реалистичного профиля напряжений, преобразуются в пространственно изменяющиеся анизотропии; в редуцированной модели сохраняется только доминирующая компонента напряжения в каждой радиальной области. Микромагнитное моделирование показывает, что редуцированная модель создает преувеличенные периферические отклонения — более сильные радиальные проекции намагниченности и более глубокое проникновение возмущенного слоя — по сравнению с полной моделью. Энергетический анализ показывает, что исключение недоминантных анизотропий приводит к недооценке взаимодействий доменной границы с дефектами и резкому, похожему на оболочку радиальному упорядочению при более высоких значениях поверхностной анизотропии.Кроме того, расчеты диссипации, основанные на подходе Тиля, показывают, что сокращенная модель переоценивает скорость доменной границы до 50%. Эти результаты демонстрируют, что включение полного тензора напряжений необходимо для точного прогнозирования как статических профилей доменных границ, так и их динамического отклика в напряженных микропроводах.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>Доменная граница</kwd><kwd>цилиндрические системы</kwd><kwd>аморфные ферромагнитные микропровода</kwd><kwd>микромагнетизм</kwd><kwd>магнитоупругая анизотропия</kwd><kwd>внутренние механические напряжения</kwd></kwd-group><kwd-group xml:lang="en"><kwd>Domain wall</kwd><kwd>cylindrical wire</kwd><kwd>amorphous ferromagnetic microwires</kwd><kwd>micromagnetics</kwd><kwd>magnetoelastic anisotropy</kwd><kwd>internal mechanical stress</kwd></kwd-group><funding-group><funding-statement xml:lang="en">This work was funded by the Russian Science Foundation (project No. 23-72-10028, https://rscf.ru/en/project/23-72-10028/). K.A.Ch. acknowledges the support of ITMO Fellowship Program.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Bukharaev A.A., Zvezdin A.K., Pyatakov A.P., Fetisov Y.K. Straintronics: a new trend in micro- and nanoelectronics and materials science. Physics-Uspekhi, 2018, 61(12), P. 1175.</mixed-citation><mixed-citation xml:lang="en">Bukharaev A.A., Zvezdin A.K., Pyatakov A.P., Fetisov Y.K. Straintronics: a new trend in micro- and nanoelectronics and materials science. Physics-Uspekhi, 2018, 61(12), P. 1175.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Bandyopadhyay S., Atulasimha J., and Barman A. Straintronics: Manipulating the Magnetization of Magnetostrictive Nanomagnets with Strain for Energy-Efficient Applications. 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