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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2025-16-3-374-385</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-326</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>NANOSYSTEMS: PHYSICS, CHEMISTRY, MATHEMATICS</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>НАНОСИСТЕМЫ: ФИЗИКА, ХИМИЯ, МАТЕМАТИКА</subject></subj-group></article-categories><title-group><article-title>Boron doped small fullerenes C20, C24, C28 as a basis for the formation of heterostructures</article-title><trans-title-group xml:lang="ru"><trans-title>Допированные бором малые фуллерены C20, C24, C28 как основа для формирования фотонных кристаллов</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0005-3897-9490</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Эль Занин</surname><given-names>А. Р.</given-names></name><name name-style="western" xml:lang="en"><surname>El Zanin</surname><given-names>A. R.</given-names></name></name-alternatives><bio xml:lang="en"><p>Anton R. El Zanin</p><p>Universitetskiy av., 100, Volgograd, 400062</p></bio><email xlink:type="simple">aelzanin@volsu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-0110-2271</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Борознин</surname><given-names>С. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Boroznin</surname><given-names>S. V.</given-names></name></name-alternatives><bio xml:lang="en"><p>Sergey V. Boroznin</p><p>Universitetskiy av., 100, Volgograd, 400062</p></bio><email xlink:type="simple">boroznin@volsu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-9486-2482</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Запороцкова</surname><given-names>И. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Zaporotskova</surname><given-names>I. V.</given-names></name></name-alternatives><bio xml:lang="en"><p>Irina V. Zaporotskova</p><p>Universitetskiy av., 100, Volgograd, 400062</p></bio><email xlink:type="simple">zaporotskova@volsu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="en">Volgograd State University<country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>29</day><month>06</month><year>2025</year></pub-date><volume>16</volume><issue>3</issue><fpage>374</fpage><lpage>385</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; El Zanin A.R., Boroznin S.V., Zaporotskova I.V., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Эль Занин А.Р., Борознин С.В., Запороцкова И.В.</copyright-holder><copyright-holder xml:lang="en">El Zanin A.R., Boroznin S.V., Zaporotskova I.V.</copyright-holder><license license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/326">https://nanojournal.ifmo.ru/jour/article/view/326</self-uri><abstract><p>In this paper, the stability, geometric and electronic properties of boron doped small fullerenes C20, C24, C28 were investigated using density functional theory (DFT) methods. Average bonds lengths were calculated and the stability of optimized structures was estimated. An analysis of one-electron spectra and the density of states (DOS) allowed us to define the mechanisms for the change in the band gap and to determine the dependence of this parameter on the concentration of boron atoms. The established dependence of the band gap on the concentration of impurity atoms suggests the possibility of controlling the refractive index of the considered nanomaterials by doping with different concentrations of boron atoms, which indicates the applicability of such an approach to the construction of heterostructures in general and photonic crystals in particular. The obtained results can be useful for the fabrication of the novel optoelectronic devices which are used in infocommunication systems for the manipulating and transformation of optical signals.</p></abstract><trans-abstract xml:lang="ru"><p>В настоящей работе методами теории функционала плотности были исследованы стабильность, геометрические и электронно-энергетические свойства допированных бором малых фуллеренов C20, C24, C28. Были определены средние длины связей оптимизированных структур, содержащих различное количество примесных атомов бора, оценена их стабильность. По полученным одноэлектронным спектрам и плотности состояний удалось определить механизм изменения ширины запрещенной зоны для каждой структуры. Установленная зависимость ширины запрещенной зоны от концентрации атомов примеси позволяет говорить о возможности управления показателем преломления рассматриваемых наноматериалов путем допирования различными концентрациями атомов бора, что свидетельствует о применимости подобного подхода для конструирования фотонных кристаллов. Полученные результаты могут быть полезны для создания новых оптических и оптоэлектронных устройств, применяемых в инфокоммуникационных системах для регулирования и преобразования оптического сигнала.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>малые фуллерены</kwd><kwd>теория функционала плотности</kwd><kwd>ширина запрещенной зоны</kwd><kwd>плотность состояний</kwd><kwd>фотонные кристаллы</kwd></kwd-group><kwd-group xml:lang="en"><kwd>small fullerenes</kwd><kwd>DFT</kwd><kwd>band gap</kwd><kwd>DOS</kwd><kwd>heterostructures</kwd><kwd>photonic crystals</kwd></kwd-group><funding-group xml:lang="en"><funding-statement>The work was carried out within the government task of the Ministry of Science and Higher Education of the Russian Federation (subject “FZUU-2023-0001”).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Essiambre R.J., Tkach R.W. 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