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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">najo-335</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHYSICS</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИКА</subject></subj-group></article-categories><title-group><article-title>Inclusions of metastable superconducting phase of gallium in SmGa2</article-title><trans-title-group xml:lang="ru"><trans-title></trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Shitov</surname><given-names>Alexandr Evgenievich</given-names></name></name-alternatives><email xlink:type="simple">a.shitov@mail.ioffe.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-4007-5640</contrib-id><name-alternatives><name name-style="western" xml:lang="en"><surname>Volkov</surname><given-names>Mikhail Pavlovich</given-names></name></name-alternatives><email xlink:type="simple">m.volkov@mail.ioffe.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>Ioffe Institute</institution><country>Russian Federation</country></aff><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Физико-технический институт им. А.Ф.Иоффе, Санкт-Петербург</institution></aff><aff xml:lang="en"><institution>Ioffe Institute</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>05</day><month>02</month><year>2026</year></pub-date><volume>16</volume><issue>5</issue><elocation-id>335</elocation-id><permissions><copyright-statement>Copyright &amp;#x00A9; Shitov A.E., Volkov M.P., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Shitov A.E., Volkov M.P.</copyright-holder><copyright-holder xml:lang="en">Shitov A.E., Volkov M.P.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/335">https://nanojournal.ifmo.ru/jour/article/view/335</self-uri><abstract><p>The magnetization M of the SmGa2 compound has a paramagnetic character in a wide temperature range, and a significant increase in magnetization is observed below 30 K, which indicates the formation of a magnetically ordered state. At temperatures below 5 K, a sharp feature is observed on the M(H) dependences, which is the contribution from the magnetization of superconducting submicron gallium inclusions. Analysis of the M(H) dependences measured at different temperatures below 5 K allowed us to assume the presence of two superconducting gallium phases. The critical temperature TC = 5.9 K and the critical field HC(0) = 560 Oe correspond to the formation of a metastable β-phase of gallium, and the critical temperature TC = 8.4 K and the critical field HC(0) = 1100 Oe can be associated with the formation of a thin layer of amorphous gallium on the surface of the β-phase inclusions. </p></abstract><kwd-group xml:lang="en"><kwd>superconducting inclusions</kwd><kwd>magnetization</kwd><kwd>SmGa2 compound</kwd><kwd>gallium</kwd><kwd>metastable phase</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Kanatzidis M.G., Pöttgen R., Jeitschko W. The metal flux: A preparative tool for the exploration of intermetallic compounds. Angew. Chem. Int. Ed. 2005, 44, 6996–7023. doi: 10.1002/anie.200462170.</mixed-citation><mixed-citation xml:lang="en">Kanatzidis M.G., Pöttgen R., Jeitschko W. The metal flux: A preparative tool for the exploration of intermetallic compounds. Angew. Chem. Int. Ed. 2005, 44, 6996–7023. doi: 10.1002/anie.200462170.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">J.A. Blanco, D. Gignoux, J.C. Gomez Sal et al. Magnetic properties of SmGa2. Physica B: condensed matter 1991, 175, 4 349-353. doi: 10.1016/0921-4526(91)90069-Q.</mixed-citation><mixed-citation xml:lang="en">J.A. Blanco, D. Gignoux, J.C. Gomez Sal et al. Magnetic properties of SmGa2. Physica B: condensed matter 1991, 175, 4 349-353. doi: 10.1016/0921-4526(91)90069-Q.</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">W. J. De Haas, J. Voogd. On the superconductivity of the gallium. Commun. Phys. Lab. Univ. Leiden, 1929. No. 199d, 733–734</mixed-citation><mixed-citation xml:lang="en">W. J. De Haas, J. Voogd. On the superconductivity of the gallium. Commun. Phys. Lab. Univ. Leiden, 1929. No. 199d, 733–734</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">B. W. Roberts. Survey of superconductive materials and critical evaluation of selected properties. J. Phys. Chem. Ref. Data, 1976, 5, 581–821 doi: 10.1063/1.555540.</mixed-citation><mixed-citation xml:lang="en">B. W. Roberts. Survey of superconductive materials and critical evaluation of selected properties. J. Phys. Chem. Ref. Data, 1976, 5, 581–821 doi: 10.1063/1.555540.</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">B. D. Sharma and J. Donohue. A refinement of the crystal structure of gallium. Zeitschrift für Kristallographie, 1962, 117, 293.</mixed-citation><mixed-citation xml:lang="en">B. D. Sharma and J. Donohue. A refinement of the crystal structure of gallium. Zeitschrift für Kristallographie, 1962, 117, 293.</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">L. Bosio, H. Curien, M. Dupont et al. Structure cristalline de Gaδ. Acta Crystallographica Section B, 1973, 29, 367. doi: 10.1107/S0567740873002530.</mixed-citation><mixed-citation xml:lang="en">L. Bosio, H. Curien, M. Dupont et al. Structure cristalline de Gaδ. Acta Crystallographica Section B, 1973, 29, 367. doi: 10.1107/S0567740873002530.</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">L. Bosio. Crystal structures of Ga(II) and Ga(III). The Journal of Chemical Physics, 1978, 68, 1221 doi: 10.1063/1.435841.</mixed-citation><mixed-citation xml:lang="en">L. Bosio. Crystal structures of Ga(II) and Ga(III). The Journal of Chemical Physics, 1978, 68, 1221 doi: 10.1063/1.435841.</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">O. Degtyareva, M. I. McMahon, D. R. Allan et al. Structural Complexity in Gallium under High Pressure: Relation to Alkali Elements. Phys. Rev. Lett. 2004, 93, 205502, doi: 10.1103/PhysRevLett.93.205502.</mixed-citation><mixed-citation xml:lang="en">O. Degtyareva, M. I. McMahon, D. R. Allan et al. Structural Complexity in Gallium under High Pressure: Relation to Alkali Elements. Phys. Rev. Lett. 2004, 93, 205502, doi: 10.1103/PhysRevLett.93.205502.</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">J. Feder, S. Kiser, F. Rothwarf et al. Hysteresis effects in three superconducting phases of gallium. Solid State Comm. 1966, 4, 611.  doi: 10.1016/0038-1098(66)90146-3.</mixed-citation><mixed-citation xml:lang="en">J. Feder, S. Kiser, F. Rothwarf et al. Hysteresis effects in three superconducting phases of gallium. Solid State Comm. 1966, 4, 611.  doi: 10.1016/0038-1098(66)90146-3.</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">H. Parr and J. Feder. Superconductivity in 𝛽-Phase Gallium. Phys. Rev. B, 1973, 7, 166. doi: 10.1103/PhysRevB.7.166.</mixed-citation><mixed-citation xml:lang="en">H. Parr and J. Feder. Superconductivity in 𝛽-Phase Gallium. Phys. Rev. B, 1973, 7, 166. doi: 10.1103/PhysRevB.7.166.</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">D. Campanini, Z. Diao, and A. Rydh. Raising the superconducting TC of gallium: In situ characterization of the transformation of 𝛼-Ga into 𝛽-Ga. Phys. Rev. B 2018, 97, 184517. doi: 10.1103/PhysRevB.97.184517.</mixed-citation><mixed-citation xml:lang="en">D. Campanini, Z. Diao, and A. Rydh. Raising the superconducting TC of gallium: In situ characterization of the transformation of 𝛼-Ga into 𝛽-Ga. Phys. Rev. B 2018, 97, 184517. doi: 10.1103/PhysRevB.97.184517.</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">J. Frohlingsdorf, B. Stritzker. Amorphous gallium produced by pulsed excimer laser irradiation. In: Draper C.W., Mazzoldi P. (eds) Laser surface treatment of metals. NATO ASI series vol 115 Springer Dordrecht, 1986, doi: 10.1007/978-94-009-4468-8_14.</mixed-citation><mixed-citation xml:lang="en">J. Frohlingsdorf, B. Stritzker. Amorphous gallium produced by pulsed excimer laser irradiation. In: Draper C.W., Mazzoldi P. (eds) Laser surface treatment of metals. NATO ASI series vol 115 Springer Dordrecht, 1986, doi: 10.1007/978-94-009-4468-8_14.</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">K. O. Moura, K. R. Pirota, F. Béron et al. Superconducting Properties in Arrays of Nanostructured β-Gallium. Scientific Reports 2017, 7, 15306. doi: s41598-017-15738-2.</mixed-citation><mixed-citation xml:lang="en">K. O. Moura, K. R. Pirota, F. Béron et al. Superconducting Properties in Arrays of Nanostructured β-Gallium. Scientific Reports 2017, 7, 15306. doi: s41598-017-15738-2.</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">R. Giedigkeit, R. Niewa, W. Schnelle et al. On the Binary Compound YbGa5. ZAAC, 2002, 628: 1692-1696. doi: 10.1002/1521-3749.</mixed-citation><mixed-citation xml:lang="en">R. Giedigkeit, R. Niewa, W. Schnelle et al. On the Binary Compound YbGa5. ZAAC, 2002, 628: 1692-1696. doi: 10.1002/1521-3749.</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">J.B. Gosk, M. Boćkowski, M. Tokarczyk et al. Superconductivity Study of GaN Highly Doped by Transition Metals. Acta Physica Polonica A, 2013, 124, 5, 877-880. doi: 10.12693/APhysPolA.124.877.</mixed-citation><mixed-citation xml:lang="en">J.B. Gosk, M. Boćkowski, M. Tokarczyk et al. Superconductivity Study of GaN Highly Doped by Transition Metals. Acta Physica Polonica A, 2013, 124, 5, 877-880. doi: 10.12693/APhysPolA.124.877.</mixed-citation></citation-alternatives></ref><ref id="cit16"><label>16</label><citation-alternatives><mixed-citation xml:lang="ru">A. Petitmangin, B. Gallas, C. Hebert et al. Characterization of oxygen deficient gallium oxide films grown by PLD. Applied Surface Science 2013, 278, 153–157. doi: 10.1016/j.apsusc.2012.10.136.</mixed-citation><mixed-citation xml:lang="en">A. Petitmangin, B. Gallas, C. Hebert et al. Characterization of oxygen deficient gallium oxide films grown by PLD. Applied Surface Science 2013, 278, 153–157. doi: 10.1016/j.apsusc.2012.10.136.</mixed-citation></citation-alternatives></ref><ref id="cit17"><label>17</label><citation-alternatives><mixed-citation xml:lang="ru">A. Petitmangin, C. Hébert, J. Perrière et al. Metallic clusters in nonstoichiometric gallium oxide films. J. Appl. Phys. 2011, 109, 013711. doi: 10.1063/1.3531536.</mixed-citation><mixed-citation xml:lang="en">A. Petitmangin, C. Hébert, J. Perrière et al. Metallic clusters in nonstoichiometric gallium oxide films. J. Appl. Phys. 2011, 109, 013711. doi: 10.1063/1.3531536.</mixed-citation></citation-alternatives></ref><ref id="cit18"><label>18</label><citation-alternatives><mixed-citation xml:lang="ru">V. Heera, J. Fiedler, R. Hübner et al. Silicon films with gallium-rich nanoinclusions: from superconductor to insulator. New J. Phys. 2013, 15 083022. doi: 10.1088/1367-2630/15/8/083022.</mixed-citation><mixed-citation xml:lang="en">V. Heera, J. Fiedler, R. Hübner et al. Silicon films with gallium-rich nanoinclusions: from superconductor to insulator. New J. Phys. 2013, 15 083022. doi: 10.1088/1367-2630/15/8/083022.</mixed-citation></citation-alternatives></ref><ref id="cit19"><label>19</label><citation-alternatives><mixed-citation xml:lang="ru">Y. B. Sun, Z. F. Di, T. Hu et al. The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature. Adv. in Cond. Matt. Phys., 2015, 4, 963768. doi: 10.1155/2015/963768.</mixed-citation><mixed-citation xml:lang="en">Y. B. Sun, Z. F. Di, T. Hu et al. The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature. Adv. in Cond. Matt. Phys., 2015, 4, 963768. doi: 10.1155/2015/963768.</mixed-citation></citation-alternatives></ref><ref id="cit20"><label>20</label><citation-alternatives><mixed-citation xml:lang="ru">R.L. Meng, B. Lorenz, Y.S. Wang et al. Study of binary and pseudo-binary intermetallic compounds with AlB2 structure. Physica C 2002, 382 113–116. doi: 10.1016/S0921-4534(02)01208-X.</mixed-citation><mixed-citation xml:lang="en">R.L. Meng, B. Lorenz, Y.S. Wang et al. Study of binary and pseudo-binary intermetallic compounds with AlB2 structure. Physica C 2002, 382 113–116. doi: 10.1016/S0921-4534(02)01208-X.</mixed-citation></citation-alternatives></ref><ref id="cit21"><label>21</label><citation-alternatives><mixed-citation xml:lang="ru">S.V. Demishev, Yu.V. Kosichkin, N.E. Sluchanko et al. Crystallization of metastable phases and superconductivity in amorphous gallium antimonide. JETP, 1993, 77, 1, 68.</mixed-citation><mixed-citation xml:lang="en">S.V. Demishev, Yu.V. Kosichkin, N.E. Sluchanko et al. Crystallization of metastable phases and superconductivity in amorphous gallium antimonide. JETP, 1993, 77, 1, 68.</mixed-citation></citation-alternatives></ref><ref id="cit22"><label>22</label><citation-alternatives><mixed-citation xml:lang="ru">T.A. Komissarova; R.V. Parfeniev; S.V. Ivanov. Comment on “Superconductivity in heavily compensated Mg-doped InN” [Appl. Phys. Lett. 2009, 94, 142108]. Appl. Phys. Lett. 2009, 95, 086101. doi: 10.1063/1.3212864</mixed-citation><mixed-citation xml:lang="en">T.A. Komissarova; R.V. Parfeniev; S.V. Ivanov. Comment on “Superconductivity in heavily compensated Mg-doped InN” [Appl. Phys. Lett. 2009, 94, 142108]. Appl. Phys. Lett. 2009, 95, 086101. doi: 10.1063/1.3212864</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
