najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2024-15-4-465-468najo-37Research ArticlePHYSICSФИЗИКАRole of bulk and surface current carriers in resistivity of thin films of the topological insulator Bi2Se3Роль объемных и поверхностных носителей тока в электросопротивлении тонких пленок топологического изолятора Bi2Se3https://orcid.org/0000-0002-8540-8720ПереваловаА. Н.PerevalovaA. N.

Alexandra N. Perevalova

620108 Ekaterinburg

adomozhirova@imp.uran.ruhttps://orcid.org/0000-0002-4755-3839ФоминыхБ. М.FominykhB. M.

Bogdan M. Fominykh

620108 Ekaterinburg

bogdan.fominyh@mail.ruhttps://orcid.org/0000-0002-2684-256XЧистяковВ. В.ChistyakovV. V.

Vasiliy V. Chistyakov

620108 Ekaterinburg

saddax@yandex.ruhttps://orcid.org/0000-0003-2044-1789МарченковВ. В.MarchenkovV. V.

Vyacheslav V. Marchenkov

620108 Ekaterinburg

march@imp.uran.ruInstitute of Metal Physics of the Ural Branch of the Russian Academy of SciencesRussian Federation202431052025154465468Copyright © Perevalova A.N., Fominykh B.M., Chistyakov V.V., Marchenkov V.V., 20252025Перевалова А.Н., Фоминых Б.М., Чистяков В.В., Марченков В.В.Perevalova A.N., Fominykh B.M., Chistyakov V.V., Marchenkov V.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/37

The temperature dependences of the electrical resistivity of topological insulator Bi2Se3 thin films with thicknesses of 20 and 40 nm were measured in the temperature range from 4.2 to 80 K. Their resistivity was shown to depend on thickness. A method was proposed for “separation” of the bulk and surface resistivity of films, with the help of which corresponding estimates were made. It was demonstrated that the surface resistivity is more than two orders of magnitude less than the bulk resistivity at T = 4.2 K.

В интервале температур от 4.2 до 80 K измерены температурные зависимости электросопротивления тонких пленок топологического изолятора Bi2Se3 толщиной 20 и 40 нм. Показано, что их удельное сопротивление зависит от толщины. Предложена методика «разделения» вкладов объема и поверхности в электросопротивление пленок, с помощью которой сделаны соответствующие оценки. Продемонстрировано, что при Т = 4.2 K величина поверхностного электросопротивления более чем на 2 порядка меньше объемного.

 

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The authors declare that there are no conflicts of interest present.