najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2021-12-1-113-117najo-377Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХAnalysis of the energy spectrum of indium antimonide quantum dots with temperature changesАнализ энергетического спектра квантовых точек антимонида индия при изменении температурыKabanovV. F.KabanovV. F.

Astrakhanskaya, 83, Saratov, 410012

Astrakhanskaya, 83, Saratov, 410012

MikhailovA. I.MikhailovA. I.

Astrakhanskaya, 83, Saratov, 410012

Astrakhanskaya, 83, Saratov, 410012

GavrikovM. V.GavrikovM. V.

Astrakhanskaya, 83, Saratov, 410012

Astrakhanskaya, 83, Saratov, 410012

maks.gavrikov.96@gmail.comSaratov State University, Department of Nano- and Biomedical TechnologiesРоссияSaratov State University, Department of Nano- and Biomedical TechnologiesRussian Federation202128072025121113117Copyright © Kabanov V.F., Mikhailov A.I., Gavrikov M.V., 20252025Kabanov V.F., Mikhailov A.I., Gavrikov M.V.Kabanov V.F., Mikhailov A.I., Gavrikov M.V.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/377

In this paper we have analyzed the broadening of the levels of the energy spectrum of indium antimonide quantum dots with a change of sample temperature. The position of the levels was determined by processing normalized differential tunneling current-voltage characteristics using the “cubic” model of a quantum dot. Comparison of the calculated values of spectrum broadening with experimental results showed qualitative and quantitative agreement between the results. It is concluded that with a decrease in the quantum dot size and, accordingly, an increase in the energy gap εc1 − εv1, the broadening in percentage will decrease, which should lead to an increase in the temperature stability of the electrophysical parameters.

В работе проведен анализ уширения уровней энергетического спектра квантовых точек антимонида индия при изменении температуры образца. Положение уровней определялось путем обработки нормированных дифференциальных туннельных ВАХ с использованием «кубической» модели квантовой точки. Сравнение расчетных значений уширения спектра с экспериментальными данными показало качественное и количественное совпадение результатов. Сделан вывод, что с уменьшением размера квантовой точки и, соответственно, увеличением энергетической щели εc1 – εc1 уширение в процентах будет уменьшаться, что должно привести к повышению температурной стабильности электрофизических параметров.

квантовые точкиантимонид индиядифференциальные туннельные ВАХэнергетический спектрquantum dotsindium antimonidedifferential tunnel current-voltage characteristicsenergy spectrumThis work was supported by grants from the Russian Foundation for Basic Research Projects No. 19-07-00087 and No. 19-07-00086.ReferencesFedorov A.V. Optics of nanostructures. Nedra, St.-Petersburg, 2005, 326 p.Fedorov A.V. Optics of nanostructures. Nedra, St.-Petersburg, 2005, 326 p.Oleinikov V.A., Sukhanova A.V., Nabiev I.R. Fluorescent semiconductor nanocrystals in biology and medicine. Russian nanotechnology, 2007, 2, P. 160–173.Oleinikov V.A., Sukhanova A.V., Nabiev I.R. Fluorescent semiconductor nanocrystals in biology and medicine. Russian nanotechnology, 2007, 2, P. 160–173.Sukhanova A.V., Venteo L., et al. Highly Stable Fluorescent Nanocrystals as a Novel Class of Labels for Immunohistochemical Analysis of Paraffin-Embedded Tissue Sections. Lab Invest, 2002, 82, P. 1259–1261.Sukhanova A.V., Venteo L., et al. Highly Stable Fluorescent Nanocrystals as a Novel Class of Labels for Immunohistochemical Analysis of Paraffin-Embedded Tissue Sections. Lab Invest, 2002, 82, P. 1259–1261.Ledentsov N.N., Grundmann M., et al. Quantum-dot heterostructure lasers. Journal of Selected Topics in Quantum Electronics, 2000, 6 (3), P. 439–451.Ledentsov N.N., Grundmann M., et al. Quantum-dot heterostructure lasers. Journal of Selected Topics in Quantum Electronics, 2000, 6 (3), P. 439–451.Bimberg D. Quantum dots for lasers, amplifiers and computing. Journal of Physics D Applied Physics, 2005, 38 (13), P. 2055–2058.Bimberg D. Quantum dots for lasers, amplifiers and computing. Journal of Physics D Applied Physics, 2005, 38 (13), P. 2055–2058.Ignatiev I.V., Kozin I.E. Carrier dynamics in semiconductor quantum dots. St.-Petersburg State university, St.-Petersburg, 2005, 126 p.Ignatiev I.V., Kozin I.E. Carrier dynamics in semiconductor quantum dots. St.-Petersburg State university, St.-Petersburg, 2005, 126 p.Reiss P., Carriere M., et al. Synthesis of Semiconductor Nanocrystals, Focusing on Nontoxic and Earth-Abundant Materials. Chem. Rev., 2016, 116 (18), P. 10731–10819.Reiss P., Carriere M., et al. Synthesis of Semiconductor Nanocrystals, Focusing on Nontoxic and Earth-Abundant Materials. Chem. Rev., 2016, 116 (18), P. 10731–10819.Yoffe A.D. Semiconductor quantum dots and related systems: Electronic, optical, luminescence and related properties of low dimensional systems. Advances in Physics, 2010, 50 (1), P. 1–208.Yoffe A.D. Semiconductor quantum dots and related systems: Electronic, optical, luminescence and related properties of low dimensional systems. Advances in Physics, 2010, 50 (1), P. 1–208.Brichkin S.B., Razumov V.F. Colloidal quantum dots: synthesis, properties and applications. Russ. Chem. Rev., 2016, 85 (12), P. 1297–1312.Brichkin S.B., Razumov V.F. Colloidal quantum dots: synthesis, properties and applications. Russ. Chem. Rev., 2016, 85 (12), P. 1297–1312.Liu W., Chang A.Y., Schaller R.D., Talapin D.V. Colloidal InSb Nanocrystals. J. Am. Chem. Soc., 2012, 134, P. 20258–20261.Liu W., Chang A.Y., Schaller R.D., Talapin D.V. Colloidal InSb Nanocrystals. J. Am. Chem. Soc., 2012, 134, P. 20258–20261.Mikhailov A.I., Kabanov V.F., Zhukov N.D., Glukhovskoy E.G. Features of the energy spectrum of quantum dots indium antimonide. Nanosystems: Physics, Chemistry, Mathematics, 2017, 8 (5), P. 596–599.Mikhailov A.I., Kabanov V.F., Zhukov N.D., Glukhovskoy E.G. Features of the energy spectrum of quantum dots indium antimonide. Nanosystems: Physics, Chemistry, Mathematics, 2017, 8 (5), P. 596–599.Dragunov V.P., Neizwestny I.G., Gridchin V.A. Fundamentals of nanoelectronics. Fizmatkniga, Moscow, 2006, 496 p.Dragunov V.P., Neizwestny I.G., Gridchin V.A. Fundamentals of nanoelectronics. Fizmatkniga, Moscow, 2006, 496 p.Zegrya G.G., Samosvat D.M. Energy spectrum and lifetime of charge carriers in open quantum dots in an electric field. Journal of Experimental and Theoretical Physics, 2009, 135 (6), P. 1043–1055.Zegrya G.G., Samosvat D.M. Energy spectrum and lifetime of charge carriers in open quantum dots in an electric field. Journal of Experimental and Theoretical Physics, 2009, 135 (6), P. 1043–1055.Mikhailov A.I., Kabanov V.F., Gorbachev I.A., Glukhovsky E.G. Study of the properties of AII BV I and AIII BV semiconductor quantum dots. Semiconductors, 2018, 52 (6), P. 603–607.Mikhailov A.I., Kabanov V.F., Gorbachev I.A., Glukhovsky E.G. Study of the properties of AII BV I and AIII BV semiconductor quantum dots. Semiconductors, 2018, 52 (6), P. 603–607.Mikhailov A.I., Kabanov V.F., et al. Methodology of analyzing the CdSe semiconductor quantum dots parameters. Nanosystems: Physics, Chemistry, Mathematics, 2018, 9, P. 464–467.Mikhailov A.I., Kabanov V.F., et al. Methodology of analyzing the CdSe semiconductor quantum dots parameters. Nanosystems: Physics, Chemistry, Mathematics, 2018, 9, P. 464–467.

The authors declare that there are no conflicts of interest present.