najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2020-11-6-680-684najo-383Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХNanostructured SiGe:Sb solid solutions with improved thermoelectric figure of meritDorokhinM. V.

Gagarin ave. 23, Nizhniy Novgorod, 603950

dorokhin@nifti.unn.ruDeminaP. B.

Gagarin ave. 23, Nizhniy Novgorod, 603950

KuznetsovYu. M.

Gagarin ave. 23, Nizhniy Novgorod, 603950

ErofeevaI. V.

Gagarin ave. 23, Nizhniy Novgorod, 603950

ZdoroveyshchevA. V.

Gagarin ave. 23, Nizhniy Novgorod, 603950

BoldinM. S.

Gagarin ave. 23, Nizhniy Novgorod, 603950

LantsevE. A.

Gagarin ave. 23, Nizhniy Novgorod, 603950

PopovA. A.

Gagarin ave. 23, Nizhniy Novgorod, 603950

UskovaE. А.

Gagarin ave. 23, Nizhniy Novgorod, 603950

TrushinV. N.

Gagarin ave. 23, Nizhniy Novgorod, 603950

Lobachevsky State University of Nizhny NovgorodRussian Federation202029072025116680–684Copyright © Dorokhin M.V., Demina P.B., Kuznetsov Y.M., Erofeeva I.V., Zdoroveyshchev A.V., Boldin M.S., Lantsev E.A., Popov A.A., Uskova E.А., Trushin V.N., 20252025Dorokhin M.V., Demina P.B., Kuznetsov Y.M., Erofeeva I.V., Zdoroveyshchev A.V., Boldin M.S., Lantsev E.A., Popov A.A., Uskova E.А., Trushin V.N.Dorokhin M.V., Demina P.B., Kuznetsov Y.M., Erofeeva I.V., Zdoroveyshchev A.V., Boldin M.S., Lantsev E.A., Popov A.A., Uskova E.А., Trushin V.N.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/383

Thermoelectric Si0.65Ge0.35Sbδ materials have been fabricated by spark plasma sintering of Ge–Si–Sb powder mixtures. The electronic properties of Si0.65Ge0.35Sbδ were found to be dependent on the uniformity of mixing of the components, which in turn is determined by the maximum heating temperature during solid-state sintering. Provided the concentration of donor Sb impurity is optimized the thermoelectric figure of merit for the investigated structures can be as high as 0.63 at 490 ◦C, the latter value is comparable with world-known analogues obtained for Si1−xGexPδ.

thermoelectric energy convertersspark plasma sinteringdopinggermanium-siliconthermoelectric figure of meritThe work was supported by Russian Science Foundation, project no. 17-79-20173, RFBR 20-38-70063, 20-3290032.ReferencesYu B., Zebarjadi M., Wang H., et.al. Enhancement of thermoelectric properties by modulation-doping in silicon germanium alloy nanocomposites. Nano Lett., 2012, 12, P. 2077–2082.Yu B., Zebarjadi M., Wang H., et.al. Enhancement of thermoelectric properties by modulation-doping in silicon germanium alloy nanocomposites. Nano Lett., 2012, 12, P. 2077–2082.Bathula S., Gahtori B., Jayasimhadri M., et.al. Microstructure and mechanical properties of thermoelectric nanostructured n-type silicongermanium alloys synthesized employing spark plasma sintering. Appl. Phys. Lett., 2014, 10, 061902.Bathula S., Gahtori B., Jayasimhadri M., et.al. Microstructure and mechanical properties of thermoelectric nanostructured n-type silicongermanium alloys synthesized employing spark plasma sintering. Appl. Phys. Lett., 2014, 10, 061902.Chen Z.-G., Han G., Yang L., et.al. Nanostructured thermoelectric materials: Current research and future challenge. Prog. Nat. Sci.: Materials International, 2012, 22, P. 535–549.Chen Z.-G., Han G., Yang L., et.al. Nanostructured thermoelectric materials: Current research and future challenge. Prog. Nat. Sci.: Materials International, 2012, 22, P. 535–549.Shikari Y., Usami N. Silicon-Germanium (SiGe) nanostructures. Production, properties and application in electronics. Woodhead publishing limited, 2011.Shikari Y., Usami N. Silicon-Germanium (SiGe) nanostructures. Production, properties and application in electronics. Woodhead publishing limited, 2011.Gayner C., Kar K.K. Recent advances in thermoelectric materials. Progress Mater. Sci., 2016, 83, P. 330–382.Gayner C., Kar K.K. Recent advances in thermoelectric materials. Progress Mater. Sci., 2016, 83, P. 330–382.Ovsyannikov D.A., Popov M.Y., Buga S.G., et.al. Transport properties of nanocomposite thermoelectric materials based on Si and Ge. Physics of the Solid State, 2015, 57, P. 605–612.Ovsyannikov D.A., Popov M.Y., Buga S.G., et.al. Transport properties of nanocomposite thermoelectric materials based on Si and Ge. Physics of the Solid State, 2015, 57, P. 605–612.Dorokhin M.V., Demina P.B., Erofeeva I.V., et.al. In-situ doping of thermoelectric materials based on SiGe solid solutions during their synthesis by the spark plasma sintering technique. Semiconductors, 2019, 53, P. 1158–1163.Dorokhin M.V., Demina P.B., Erofeeva I.V., et.al. In-situ doping of thermoelectric materials based on SiGe solid solutions during their synthesis by the spark plasma sintering technique. Semiconductors, 2019, 53, P. 1158–1163.Health N.J. Hazardous substance Fact Sheet. Antimony. URL: https://web.doh.state.nj.us/rtkhsfs/factsheets.aspx.Health N.J. Hazardous substance Fact Sheet. Antimony. URL: https://web.doh.state.nj.us/rtkhsfs/factsheets.aspx.Olesinski R.W., Abbaschian G.J. The Sb–Si (Antimony-Silicon) system. Bulletin of Alloy Phase Diagrams, 1985, 6, P. 445–448.Olesinski R.W., Abbaschian G.J. The Sb–Si (Antimony-Silicon) system. Bulletin of Alloy Phase Diagrams, 1985, 6, P. 445–448.Murugasami R., Vivekanandhan P., Kumaran S., et.al. Simultaneous enhancement in thermoelectric performance and mechanical stability of p-type SiGe alloy doped with Boron prepared by mechanical alloying and spark plasma sintering. J. Alloys and Comp., 2019, 773, P. 752–761.Murugasami R., Vivekanandhan P., Kumaran S., et.al. Simultaneous enhancement in thermoelectric performance and mechanical stability of p-type SiGe alloy doped with Boron prepared by mechanical alloying and spark plasma sintering. J. Alloys and Comp., 2019, 773, P. 752–761.Chuvildeev V.N., Boldin M.S., Dyatlova Y.G., et.al. Comparative study of hot pressing and high-speed electropulse plasma sintering of Al2O3/ZrO2/Ti(C,N) powders. Russian Journal of Inorganic Chemistry, 2018, 60, P. 987–993.Chuvildeev V.N., Boldin M.S., Dyatlova Y.G., et.al. Comparative study of hot pressing and high-speed electropulse plasma sintering of Al2O3/ZrO2/Ti(C,N) powders. Russian Journal of Inorganic Chemistry, 2018, 60, P. 987–993.Erofeeva I.V., Dorokhin M.V., Zdoroveyshchev A.V., et.al. Production of Si- and Ge-based thermoelectric materials by spark plasma sintering. Semiconductors, 2018, 52, P. 1559–1563.Erofeeva I.V., Dorokhin M.V., Zdoroveyshchev A.V., et.al. Production of Si- and Ge-based thermoelectric materials by spark plasma sintering. Semiconductors, 2018, 52, P. 1559–1563.Devyatkova E.D., Petrov A.V., Smirnov I.A., Moizhes B.Y. Fused silica as a reference material in measurements of thermal conductivity. Soviet Phys. Solid State, 1960, 2, P. 738–746.Devyatkova E.D., Petrov A.V., Smirnov I.A., Moizhes B.Y. Fused silica as a reference material in measurements of thermal conductivity. Soviet Phys. Solid State, 1960, 2, P. 738–746.Schaffler F., Levinshtein M.E., Rumyantsev S.L., Shur M.S. Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. John Wiley & Sons, Inc., New York, 2001, 188 p.Schaffler F., Levinshtein M.E., Rumyantsev S.L., Shur M.S. Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. John Wiley & Sons, Inc., New York, 2001, 188 p.

The authors declare that there are no conflicts of interest present.