najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2020-11-3-301-306najo-424Research ArticlePHYSICSФИЗИКАNegative differential resistance in gate all-around spin field effect transistorsMalikG.F.A.

Srinagar-190006

Gfarozam@gmail.comKharadiM. A.

Srinagar-190006

kharadimubashir@gmail.comKhandayF. A.

Srinagar-190006

farooqkhanday@kashmiruniversity.ac.inShahK. A.

M.A. Road Srinagar-190001

drkhursheda@gmail.comParveenN.

Srinagar, J&K

Department of Electronics and Instrumentation Technology, University of KashmirIndiaDepartment of Physics, S.P. College, Cluster University SrinagarIndiaIslamia College of Science and CommerceIndia202030072025113301–306Copyright © Malik G., Kharadi M.A., Khanday F.A., Shah K.A., Parveen N., 20252025Malik G., Kharadi M.A., Khanday F.A., Shah K.A., Parveen N.Malik G., Kharadi M.A., Khanday F.A., Shah K.A., Parveen N.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/424

In this paper, novel gate all-around spin field effect transistors (GAA Spin-FETs) with three different channel materials are proposed and their transport properties are presented. The three channel materials used are Indium Arsenide (InAs), Indium Phosphide (InP) and Aluminum Antimonide (AlSb). Based on the type of semiconducting channel, the results are obtained and a comparison of transport properties among these three FETs is made. The proposed device offers both advantages of reduced power dissipation and compact size. The results reveal that the negative differential resistance (NDR) is observed in all modeled devices and the peak to valley current ratio (PVCR) is different in all structures and is maximum in AlSb based field effect transistor. It is expected that these results will find enormous applications in analog electronics and in the design of oscillators. Additionally, the observed results in this study have great potential for the design of various logic gates and digitals circuits.

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The authors declare that there are no conflicts of interest present.