najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2024-15-4-520-529najo-44Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХPhase formation of nanosized InGaZnO4 obtained by the sol-gel method with different chelating agents.Фазообразование наноразмерного InGaZnO4 полученного золь-гель методом с различными комплексообразователямиhttps://orcid.org/0009-0008-4546-1368ЗирникГ. М.ZirnikG. M.

Gleb M. Zirnik Laboratory of Semiconductor Oxide Materials

Institutsklane, 9, Dolgoprudny, 141701

Institute of Chemistry

Universitetskaya emb., 7–9, 199034

https://orcid.org/0000-0002-7117-7132ЧернухаА. С.ChernukhaA. S.

Alexander S. Chernukha  Laboratory of Semiconductor Oxide MaterialsInstitutsky lane, 9, Dolgoprudny, 141701

Institute of Chemistry

Universitetskaya emb., 7–9, 199034

https://orcid.org/0000-0002-8623-4769УчаевД. А.UchaevD. A.

Daniil A. Uchaev Scientific and Educational Center “Nanotechnologies”

Lenin Av., 76, Chelyabinsk, 454080

https://orcid.org/0000-0001-6973-4633СолизодаИ. А.SolizodaI. A.

Ibrohimi A. Solizoda Laboratory of Semiconductor Oxide MaterialsInstitutsky lane, 9, Dolgoprudny, 141701

Institute of Chemistry

Universitetskayemb., 7–9, 199034

Rudaki Av., 17, Dushanbe, 734025

https://orcid.org/0000-0002-3028-947XГудковаС. А.GudkovaS. A.

Svetlana A. Gudkova Laboratory of Semiconductor Oxide MaterialsInstitutsky lane, 9, Dolgoprudny, 141701

https://orcid.org/0009-0002-1921-7915НекорысноваН. С.NekorysnovaN. S.

Nadezhda S. Nekorysnova Scientific and Educational Center “Nanotechnologies”

Lenin Av., 76, Chelyabinsk, 454080

https://orcid.org/0000-0002-5190-9834ВинникД. А.VinnikD. A.

Denis A. Vinnik  Laboratory of Semiconductor Oxide Materials

Institutsky lane, 9, Dolgoprudny, 141701

Institute of Chemistry

Universitetskaya emb., 7–9, 199034

Scientific and Educational Center “Nanotechnologies”Lenin Av., 76, Chelyabinsk, 454080

vinnikda@susu.ruMoscow Institute of Physics and Technology; St. Petersburg State UniversityRussian FederationMoscow Institute of Physics and Technology; St. Petersburg State University,; South Ural State UniversityRussian FederationSouth Ural State UniversityRussian FederationMoscow Institute of Physics and Technology; St. Petersburg State University; Tajik National UniversityRussian FederationMoscow Institute of Physics and TechnologyRussian FederationMoscow Institute of Physics and Technology; St. Petersburg State University; South Ural State UniversityRussian Federation202431052025154520529Copyright © Zirnik G.M., Chernukha A.S., Uchaev D.A., Solizoda I.A., Gudkova S.A., Nekorysnova N.S., Vinnik D.A., 20252025Зирник Г.М., Чернуха А.С., Учаев Д.А., Солизода И.А., Гудкова С.А., Некорыснова Н.С., Винник Д.А.Zirnik G.M., Chernukha A.S., Uchaev D.A., Solizoda I.A., Gudkova S.A., Nekorysnova N.S., Vinnik D.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/44

The production of nano-sized semiconductor oxide materials, such as indium-gallium-zinc oxide (IGZO), will make it possible to use it for the transistors manufacture using printing methods. The sol-gel method is one of the widely known and used methods for producing nano-sized oxide materials. As is known, a chelating reagent (complexing agent) can influence both the synthesis process and the final phase composition. The results of sol-gel synthesis with various chelating reagents: citric acid, ethylene glycol, oxalic acid, urea, glycerol and sucrose are presented. The samples were studied by X-ray diffraction. It was found that ethylene glycol and glycerol as chelating reagents make it possible to obtain a homogeneous crystalline material at 900 ◦C with a YbFe2O4-type structure, R-3m (166) space group. Unit cell parameters and crystallite size (Halder-Wagner method) for InGaZnO4 single-phase samples were calculated

Получение наноразмерных полупроводниковых оксидных материалов, каким является тройной оксид индия-галлия-цинка, позволит применить последний для изготовления транзисторов перспективными печатными методами. Золь-гель метод является одним из широко известных и используемых методов получения наноразмерных оксидных материалов. Известно, что использование комплексообразователя влияет на ход синтеза и фазовый состав конечного продукта. В статье представлены результаты исследования процесса золь-гель синтеза с рядом нескольких комплексообразователей: лимонной кислотой, этиленгликолем, щавелевой кислотой, мочевиной, глицерином и сахарозой. Образцы исследованы методом рентгенофазового анализа. Установлено, что использование этиленгликоля и глицерина позволяет после нагревания до 900 °С получить однофазный кристаллический материал со структурой типа YbFe2O4 и пространственной группой R-3m (166). Для однофазных образцов рассчитаны параметры элементарной ячейки, также по методу Гальдера-Вагнера оценён размер области когерентного рассеяния (кристаллитов).

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The authors declare that there are no conflicts of interest present.