najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2020-11-2-195-204najo-445Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХSynthesis and characterisation of CZTSe bulk materials for thermoelectric applicationshttps://orcid.org/0000-0003-3532-6097SharmaYogeshchandra

Jaipur–303012, Rajasthan

yc.sharma.vit@gmail.comDepartment of Physics, Vivekananda Global UniversityIndia202030072025112195–204Copyright © Sharma Y., 20252025Sharma Y.Sharma Y.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/445

Quaternary Copper Zinc Tin Selenide (CZTSe) is a preferred candidate as an absorber layer in solar cells due to its non-toxicity and the abundancy of its constituents. This material also has thermoelectric properties suitable for solar thermal energy conversion and waste heat recovery. The preparation of bulk thermoelectric materials is a tedious, multistep task and requires considerable time and energy consumption for tuning of desired properties. Here one step solid state reaction has been used for synthesis of bulk CZTSe materials in five different ratios of elemental precursors: Cu, Zn, Sn and Se. Atomic Force Microscopy (AFM), X-Ray Photoelectron Spectroscopy (XPS) and X-ray diffraction (XRD) techniques have been used for structural and compositional analysis of the materials. AFM analysis shows significant difference in roughness parameters and grain size with respect to Cu/Zn variations. The XRD spectra of various samples show the formation of CZTSe materials. Raman spectra verifies absence of secondary phases. XPS analysis reveals constituent atoms display chemical valences of +1, +2, +4, and −1 for Cu, Zn, Sn, and Se, respectively. The stoichiometric sample, Cu2ZnSnSe4, exhibited the maximum power factor 0.30 mW·m−1K−2, having carrier concentration in the range of 1018 – 1019 cm−3 and resistivity in the range of 0.21 to 0.24 Ω·cm.

thermoelectric devicesthermoelectric effects in semiconductors and insulatorsHall effect in semiconductorsRaman spectroscopy in chemical analysisphotoelectron spectroscopy in chemical analysispowder diffraction X-raytransport properties (electric and thermal conductivitythermoelectric effectsetc.)Author is sincerely thankful to Director and Dr. Jasaram, Defence Laboratory, Jodhpur; Director, MRC, MNIT, Jaipur; Dr. A.K. Sinha, Dr. M.K. Tiwari, Dr. V. Srihari (beam time for XRD at BL-11) and U. Gautam (beam time for BL-14) at INDUS-II, Raja Rammanna Center for Advanced Technology (RRCAT), Indore; Dr. K. Ashokan and Sh.R.C. Meena from IUAC, New Delhi for their experimental and technical support.ReferencesKush P., Deka S. Multifunctional copper-based quaternary chalcogenide semiconductors toward state-of-the-art energy applications. Chem. Nano Mat., 2019, 5 (4), P. 373–402.Kush P., Deka S. 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The authors declare that there are no conflicts of interest present.