najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2020-11-1-92-98najo-471Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХSynthesis and characterization of bismuth selenide thin films by thermal evaporation techniqueSharmaH.

Jaipur-303012, Rajasthan

Jaipur-302017, Rajasthan

aks17686@gmail.comSharmaY. C.

Jaipur-303012, Rajasthan

Department of Physics, Vivekananda Global University; Department of Physics, Kanoria P.G CollegeIndiaDepartment of Physics, Vivekananda Global UniversityIndia20203107202511192–98Copyright © Sharma H., Sharma Y.C., 20252025Sharma H., Sharma Y.C.Sharma H., Sharma Y.C.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/471

In recent years, bismuth selenide has attracted a good deal of attention due to its unique properties. Bismuth selenide is a topological insulator which has surface conductivity that makes it an attractive compound for practical applications. Employing the solid state reaction, bulk bismuth selenide compounds in four different stoichiometric ratios of Bi/Se have been prepared at 850 ◦C in a muffle furnace. The synthesized bismuth selenide compounds were characterized using XRD. Two most intense peaks were identified, corresponding to the (006) and (0015) planes which conform with the formation of bismuth selenide. Thin films of these compounds were deposited on Soda lime glass substrate by thermal evaporation method. Thin films were characterized by EDAX, SEM and RAMAN. Two clear vibration modes are observed corresponding to E2g and Amodes. Optical properties of thin films were also studied. Electrical band gap is found to increase with the increment in the amount of Bismuth in thin films.

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The authors declare that there are no conflicts of interest present.