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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2020-11-1-110-116</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-473</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>CHEMISTRY AND MATERIALS SCIENCE</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ХИМИЯ И НАУКА О МАТЕРИАЛАХ</subject></subj-group></article-categories><title-group><article-title>Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide</article-title><trans-title-group xml:lang="ru"><trans-title></trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Mittova</surname><given-names>I. Ya.</given-names></name></name-alternatives><bio xml:lang="en"><p>Universitetskaya pl., Voronezh, 394018</p></bio><email xlink:type="simple">imittova@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Kostryukov</surname><given-names>V. F.</given-names></name></name-alternatives><bio xml:lang="en"><p>Universitetskaya pl., Voronezh, 394018</p></bio><email xlink:type="simple">vc@chem.vsu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Ilyasova</surname><given-names>N. A.</given-names></name></name-alternatives><bio xml:lang="en"><p>Universitetskaya pl., Voronezh, 394018</p></bio><email xlink:type="simple">ilyasova_1997@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Sladkopevtsev</surname><given-names>B. V.</given-names></name></name-alternatives><bio xml:lang="en"><p>Universitetskaya pl., Voronezh, 394018</p></bio><email xlink:type="simple">dp-kmins@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Samsonov</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="en"><p>Universitetskaya pl., Voronezh, 394018</p></bio><email xlink:type="simple">samsonjr@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>Voronezh State University</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2020</year></pub-date><pub-date pub-type="epub"><day>31</day><month>07</month><year>2025</year></pub-date><volume>11</volume><issue>1</issue><elocation-id>110–116</elocation-id><permissions><copyright-statement>Copyright &amp;#x00A9; Mittova I.Y., Kostryukov V.F., Ilyasova N.A., Sladkopevtsev B.V., Samsonov A.A., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Mittova I.Y., Kostryukov V.F., Ilyasova N.A., Sladkopevtsev B.V., Samsonov A.A.</copyright-holder><copyright-holder xml:lang="en">Mittova I.Y., Kostryukov V.F., Ilyasova N.A., Sladkopevtsev B.V., Samsonov A.A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/473">https://nanojournal.ifmo.ru/jour/article/view/473</self-uri><abstract><p>The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO2/InP heterostructures (thickness of SnO2 layer ∼ 50 nm). It was established that SnO2 does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO2 provides the formation of nanoscale films with semiconductor properties.</p></abstract><kwd-group xml:lang="en"><kwd>indium phosphide</kwd><kwd>nanoscale films</kwd><kwd>thermal oxidation</kwd><kwd>tin dioxide</kwd></kwd-group><funding-group><funding-statement xml:lang="en">This research was supported by the Russian Foundation for Basic Research, grant No. 18-03-00354a. The research results were partially obtained on the equipment of the Collective Use Centre of Voronezh State University. URL: http://ckp.vsu.ru.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Shikova T.G., Kholodkov I.V., Talanov E.N. 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