najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2021-12-3-311-316najo-489Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХUltraviolet and visible reflective TiO2/SiO2 thin films on silicon using sol-gel spin coaterТонкие пленки TiO2/SiO2 на кремнии, полученные с использованием золь-гель центрифужного осаждения, отражающие в ультрафиолетовой и видимой областяхSaravananS.SaravananS.

Narsapur-534 280, West Godavari (A.P.)

shasa86@gmail.comDubeyR. S.DubeyR. S.

Narsapur-534 280, West Godavari (A.P.)

Advanced Research Laboratory for  Nanomaterials & Devices, Department of Nanotechnology, Swarnandhra College of Engineering & TechnologyIndia202104082025123311316Copyright © Saravanan S., Dubey R.S., 20252025Saravanan S., Dubey R.S.Saravanan S., Dubey R.S.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/489

TiO2/SiO2 alternative thin films (stacks) were deposited on silicon substrates using sol-gel spin-coating techniques. The prepared samples had their corresponding optical properties analyzed by UV-Visible spectrophotometry (UV-Vis), X-ray diffractometry (XRD), a surface profilometer, and Raman spectroscopy. The optical and crystallization properties of thin films were varied and compared by changing the number of stacks. UV-Vis spectrum showed high reflectance and shifting towards the infrared region with effect of increased TiO2/SiO2 stacks. XRD spectra confirmed the existence of anatase TiO2 and SiO2 diffraction peaks. The multilayer film thickness was calculated at 109 and 151 nm at two and four stacks by a surface profilometer. The Raman spectra confirmed the Si–O–Si and TiO2 stretching modes at 2600, 980, and 519 cm-1. This investigation reveals the promising and effective UV-Visible reflective property of alternative TiO2/SiO2 thin films on a silicon substrate.

Альтернативные тонкие пленки (пакеты) TiO2/SiO2 были нанесены на кремниевые подложки с использованием методов золь-гель центрифугирования. Свойства приготовленных образцов анализировали с помощью спектрофотометрии в УФ-видимой области (UV-Vis), рентгеновской дифрактометрии (XRD), поверхностного профилометра и рамановской спектроскопии. Оптические и кристаллизационные свойства тонких пленок варьировались и сравнивались путем изменения количества стэков. УФ-видимый спектр показал высокую отражательную способность и смещение в инфракрасную область из-за увеличения количества слоев TiO2/SiO2. Спектры РФА подтвердили наличие дифракционных пиков анатаза TiO2 и SiO2. Толщину многослойной пленки рассчитывали при 109 и 151 нм при двух и четырех стэках с помощью поверхностного профилометра. Спектры КРС подтвердили валентные моды Si-O-Si и TiO2 при 2600, 980 и 519 см-1. Это исследование выявило многообещающие и эффективные свойства отражения в ультрафиолетовом и видимом диапазонах альтернативных тонких пленок TiO2/SiO2 на кремниевой подложке.

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The authors declare that there are no conflicts of interest present.