najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2021-12-5-569-574najo-512Research ArticlePHYSICSФИЗИКАNumerical analysis of the effect of illumination intensity on photoelectric parameters of the silicon solar cell with various metal nanoparticlesЧисленный анализ влияния интенсивности освещения на фотоэлектрические параметры кремниевого солнечного элемента с различными металлическими наночастицамиGulomovJ.GulomovJ.

Andijan, 119, St. Universitet, 170100

alievuz@yahoo.comAlievR.AlievR.

Andijan, 119, St. Universitet, 170100

asurbekgulomov@yahoo.comDepartment of physics, Andijan state universityUzbekistan202105082025125569574Copyright © Gulomov J., Aliev R., 20252025Gulomov J., Aliev R.Gulomov J., Aliev R.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/512

It is important to study the effect of light intensity on the main photoelectric parameters of silicon solar cell with various metal nanoparticles because the intensity of sunlight is variable. In this paper, the effect of Cu, Pt, Au, Ag, Ti, Al, Co nanoparticles on dependence of main photoelectric parameters of silicon solar cell on light intensity has been studied by modeling with Sentaurus TCAD. The intensity coefficient of short circuit current densities of Pt and Ti nanoparticles induced silicon solar cells were found to be KJ,Pt = 0.0158 A/W and KJ,Ti = 0.0164 A/W.

For simple silicon solar cell, this value was found to be KJ = 0.0071 A/W. Thus, we have observed that was the two-fold greater the intensity coefficient of short circuit current density and output power for the silicon solar cells with Ti and Pt nanoparticles relative to that of a simple silicon solar cell.

Важно изучить влияние интенсивности света на основные фотоэлектрические параметры кремниевого солнечного элемента с различными наночастицами металлов, поскольку интенсивность солнечного света непостоянна. В данной работе путем моделирования в Sentaurus TCAD исследовано влияние наночастиц Cu, Pt, Au, Ag, Ti, Al, Co на зависимость основных фотоэлектрических параметров кремниевого солнечного элемента от интенсивности света. Коэффициенты плотности тока короткого замыкания кремниевых солнечных элементов, с внедренными наночастицами Pt и Ti, составили KJ;Pt = 0,0158 А/Вт и KJ;Ti = 0,0164 А/Вт. Для простого кремниевого солнечного элемента это значение оказалось равным KJ = 0:0071 А/Вт. Таким образом, мы наблюдали двукратное увеличение коэффициента интенсивности плотности тока короткого замыкания и выходной мощности для кремниевых солнечных элементов с наночастицами Ti и Pt по сравнению с простым кремниевым солнечным элементом.

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The authors declare that there are no conflicts of interest present.