najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2021-12-6-680-689najo-552Research ArticlePHYSICSФИЗИКАTemperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexesТемпературная зависимость рекомбинационного излучения в полупроводниковых наноструктурах с квантовыми точками, содержащими примесные комплексыKrevchikV. D.KrevchikV. D.

40, Krasnaya str., Penza, 440026.

physics@pnzgu.ruRazumovA. V.RazumovA. V.

40, Krasnaya str., Penza, 440026.

SemenovM. B.SemenovM. B.

40, Krasnaya str., Penza, 440026.

MoykoI. M.MoykoI. M.

40, Krasnaya str., Penza, 440026.

ShorokhovA. V.ShorokhovA. V.

40, Krasnaya str., Penza, 440026;

PO Box 35, Jyväskylä, FI-40014, Finland.

alex.shorokhov@gmail.comPenza State UniversityRussian FederationPenza State University; University of Jyväskylä (Finland)Russian Federation202107082025126680689Copyright © Krevchik V.D., Razumov A.V., Semenov M.B., Moyko I.M., Shorokhov A.V., 20252025Krevchik V.D., Razumov A.V., Semenov M.B., Moyko I.M., Shorokhov A.V.Krevchik V.D., Razumov A.V., Semenov M.B., Moyko I.M., Shorokhov A.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/552

Temperature dependence of the spectral intensity of recombination radiation in a quasi-zero-dimensional structure, containing impurity complexes “A++e” (a hole localized on a neutral acceptor, interacting with an electron localized in the ground state of a quantum dot), has been investigated in an external electric field in the presence of tunneling decay of a quasistationary A+-state. Probability of dissipative tunneling of a hole has been calculated in the one-instanton approximation, and the influence of tunneling decay and of an external electric field on the A+-state binding energy and on the spectra of recombination radiation, associated with the optical transition of an electron from the ground state of a quantum dot to the A+-state of the impurity center, has been investigated in the adiabatic approximation. “Dips” in the temperature dependence of the SIRR have been revealed, which are associated with the presence of resonant tunneling at certain values of temperature and strength of the external electric field, for which the double-well oscillatory potential becomes symmetric.

Температурная зависимость спектральной интенсивности рекомбинационного излучения в квазинульмерной структуре, содержащей примесные комплексы «А++е» (дырка, локализованная на нейтральном акцепторе, взаимодействующая с электроном, локализованным в основном состоянии квантовой точки), исследована во внешнем электрическом поле при наличии туннельного распада квазистационарного А+-состояния . В одноинстантонном приближении рассчитана вероятность диссипативного туннелирования дырки и влияние туннельного распада и внешнего электрического поля на энергию связи A+-состояния и на спектры рекомбинационного излучения, связанного с оптическим переходом в адиабатическом приближении исследован электрон из основного состояния квантовой точки в А+-состояние примесного центра. Выявлены «провалы» в температурной зависимости SIRR, связанные с наличием резонансного туннелирования при определенных значениях температуры и напряженности внешнего электрического поля, при которых двухямный колебательный потенциал становится симметричным.

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The authors declare that there are no conflicts of interest present.