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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2021-12-6-783-791</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-577</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>CHEMISTRY AND MATERIALS SCIENCE</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ХИМИЯ И НАУКА О МАТЕРИАЛАХ</subject></subj-group></article-categories><title-group><article-title>Study of the resistive switching and electrode degradation in Al/TiO2/FTO thin films upon thermal treatment in reducing atmosphere</article-title><trans-title-group xml:lang="ru"><trans-title></trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Illarionov</surname><given-names>G. A.</given-names></name></name-alternatives><bio xml:lang="en"><p>49, Kronverkskiy prosp., St. Petersburg, 197101.</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Kolchanov</surname><given-names>D. S.</given-names></name></name-alternatives><bio xml:lang="en"><p>49, Kronverkskiy prosp., St. Petersburg, 197101.</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Chrishtop</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="en"><p>49, Kronverkskiy prosp., St. Petersburg, 197101.</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Kasatkin</surname><given-names>I. A.</given-names></name></name-alternatives><bio xml:lang="en"><p>7-9, Universitetskaya nab., St. Petersburg, 199034.</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Vinogradov</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="en"><p>49, Kronverkskiy prosp., St. Petersburg, 197101.</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Morozov</surname><given-names>M. I.</given-names></name></name-alternatives><bio xml:lang="en"><p>49, Kronverkskiy prosp., St. Petersburg, 197101.</p></bio><email xlink:type="simple">morozov@scamt-itmo.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>ITMO University</institution><country>Russian Federation</country></aff><aff xml:lang="en" id="aff-2"><institution>Saint Petersburg State University</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2021</year></pub-date><pub-date pub-type="epub"><day>07</day><month>08</month><year>2025</year></pub-date><volume>12</volume><issue>6</issue><fpage>783</fpage><lpage>791</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Illarionov G.A., Kolchanov D.S., Chrishtop V.V., Kasatkin I.A., Vinogradov A.V., Morozov M.I., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Illarionov G.A., Kolchanov D.S., Chrishtop V.V., Kasatkin I.A., Vinogradov A.V., Morozov M.I.</copyright-holder><copyright-holder xml:lang="en">Illarionov G.A., Kolchanov D.S., Chrishtop V.V., Kasatkin I.A., Vinogradov A.V., Morozov M.I.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/577">https://nanojournal.ifmo.ru/jour/article/view/577</self-uri><abstract><p>Application of sol-gel derived titania nanoparticles in memristive thin film devices has been a subject of several studies. The reported data on the functional properties and stability of such devices scatter considerably. Meanwhile, the role of post-fabrication treatment, such as annealing in reducing atmosphere, is still poorly investigated for this class of devices. In this study, the effects of thermal annealing in a reducing atmosphere on the resistive switching behavior and the morphological changes of the top electrode during the electroforming process have been systematically addressed for the samples of Al/TiO2/FTO thin film memristors prepared using sol-gel derived titania. Manifestations of several phenomena affecting the functional stability of these thin films, such as electrode delamination and collapse due to formation of gas bubbles, appearance of electrochemical patterns at the electrode surface, and morphological changes induced by the electroforming process have been systematically established in relation with the various conditions of thermal treatment in a reducing atmosphere.</p></abstract><kwd-group xml:lang="en"><kwd>TiO2</kwd><kwd>memristors</kwd><kwd>electrode degradation</kwd></kwd-group><funding-group><funding-statement xml:lang="en">The research has been carried out with financial support from the Russian Science Foundation (Grant No. 19-1900433).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Yang J.J. Strukov D.B., Stewart D.R. Memristive devices for computing. Nat. 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