najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2019-10-5-520-529najo-584Research ArticlePHYSICSФИЗИКАRecombination radiation associated with A+-centers in quantum dots in an external magnetic fieldKrevchikV. D.

Krasnaya str., 40, Penza, 440026

physics@pnzgu.ruRazumovA. V.

Krasnaya str., 40, Penza, 440026

physics@pnzgu.ruBudyanskyP. S.

Krasnaya str., 40, Penza, 440026

physics@pnzgu.ruSemenovM. B.

Krasnaya str., 40, Penza, 440026

physics@pnzgu.ruMoykoI. M.

Krasnaya str., 40, Penza, 440026

physics@pnzgu.ruKhvastunovN. N.

Studend str., 11 “a”, Saransk, Mordovian Rep., 430007

physics@pnzgu.ruPenza State UniversityRussian FederationMordovian State Pedagogical Institute named after M. E. YevsevievRussian Federation201923082025105520529Copyright © Krevchik V.D., Razumov A.V., Budyansky P.S., Semenov M.B., Moyko I.M., Khvastunov N.N., 20252025Krevchik V.D., Razumov A.V., Budyansky P.S., Semenov M.B., Moyko I.M., Khvastunov N.N.Krevchik V.D., Razumov A.V., Budyansky P.S., Semenov M.B., Moyko I.M., Khvastunov N.N.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/584

The effect of an external magnetic field on the binding energy of a hole in an impurity complex A+ +e in a spherically symmetric quantum dot, as well as frequency dependence of the spectral intensity of recombination radiation of the quasi-zero-dimensional structure with impurity complexes A+ + e have been investigated. It is shown that in an external magnetic field there is a spatial anisotropy for the binding energy of A+-state due to hybrid quantization in the quantum dot radial plane and dimensional quantization in the direction of an external magnetic field. It is shown that in an external magnetic field the spectral intensity curve of the recombination radiation shifts to the short-wavelength region of the spectrum and probability of the radiative transition of an electron to the level of A+-center increases, which is caused by increase in the overlap integral of the envelope wave functions of a hole bound at the A+-center and of an electron localized in the ground state of quantum dot.

recombination radiationquantum dotsThis work was supported by the Ministry of Education and Science of the Russian Federation (project No. 3.6321.2017/8.9 and 2019-0940).ReferencesZaytsev S.A., Knyr V.A. Reaction of the atoms double photoionization in the J-matrix approach. Bulletin of the Pacific State University, 2010, 1 (16), 13.Zaytsev S.A., Knyr V.A. Reaction of the atoms double photoionization in the J-matrix approach. Bulletin of the Pacific State University, 2010, 1 (16), 13.Petrov P.V., Ivanov Yu.L., Averkiev N.S. Circular polarization of photoluminescence for the two-dimensional system of A+-centers in an external magnetic field. Physics and technology of semiconductors , 2011, 45 (27), 794.Petrov P.V., Ivanov Yu.L., Averkiev N.S. Circular polarization of photoluminescence for the two-dimensional system of A+-centers in an external magnetic field. Physics and technology of semiconductors , 2011, 45 (27), 794.Shamirzayev T.S., Timensky A.M., et al. Long-term kinetics of photoluminescence for InAs/AlAs-quantum dots in an external magnetic field. Physics and technology of semiconductors, 2005, 33 (1), 35.Shamirzayev T.S., Timensky A.M., et al. Long-term kinetics of photoluminescence for InAs/AlAs-quantum dots in an external magnetic field. Physics and technology of semiconductors, 2005, 33 (1), 35.Ekimov A.I., Onuschenko A.A., Efros Al.L. Quantization of the holes energy spectrum in the electron adiabatic potential. JETP Letters, 1986, 43 (6), 292.Ekimov A.I., Onuschenko A.A., Efros Al.L. Quantization of the holes energy spectrum in the electron adiabatic potential. JETP Letters, 1986, 43 (6), 292.Astakhov G.V., Kochereshko V.P., et al. Photoluminescence of the InAs-quantum dots grown on the disoriented GaAs-substrates. Physics and technology of semiconductors, 1999, 33, 1084.Astakhov G.V., Kochereshko V.P., et al. Photoluminescence of the InAs-quantum dots grown on the disoriented GaAs-substrates. Physics and technology of semiconductors, 1999, 33, 1084.Krevchik V.D., Grunin A.B., Zaitsev R.V. Anisotropy of the magneto-optical absorption for complexes “quantum dot-impurity center”. Physics and technology of semiconductors, 2002, 36 (10), 1225.Krevchik V.D., Grunin A.B., Zaitsev R.V. Anisotropy of the magneto-optical absorption for complexes “quantum dot-impurity center”. Physics and technology of semiconductors, 2002, 36 (10), 1225.Zhu J.L. Exact Solutions for hydrogenic donor states in a spherically rectangular quantum well. Physical Review B, 1989, 39 (12), 8780(R).Zhu J.L. Exact Solutions for hydrogenic donor states in a spherically rectangular quantum well. Physical Review B, 1989, 39 (12), 8780(R).Galiev V.I., Poluanov A.F. Spectra of energy and optical absorption of shallow impurities in the semiconductor quantum dot. Physics and technology of semiconductors, 1993, 27 (7), 1202.Galiev V.I., Poluanov A.F. Spectra of energy and optical absorption of shallow impurities in the semiconductor quantum dot. Physics and technology of semiconductors, 1993, 27 (7), 1202.Krevchik V.D., Zaitsev R.V. The light impurity absorption in structures with quantum dots. Physics and technology of semiconductors, 2001, 43 (23), 504.Krevchik V.D., Zaitsev R.V. The light impurity absorption in structures with quantum dots. Physics and technology of semiconductors, 2001, 43 (23), 504.Pakhomov A.A., Khalipov K.V., Yassievich I.N. Local electronic states in semiconductor quantum wells. Physics and technology of semiconductors, 1996, 30 (8), 1387.Pakhomov A.A., Khalipov K.V., Yassievich I.N. Local electronic states in semiconductor quantum wells. Physics and technology of semiconductors, 1996, 30 (8), 1387.Mikhailov A.I., Mikhailov I.A. Double photoionization and ionization with excitation under the Compton scattering of high-energy photons on metastable states of the helium-like ions. JETP, 1999, 116 (6), 1889.Mikhailov A.I., Mikhailov I.A. Double photoionization and ionization with excitation under the Compton scattering of high-energy photons on metastable states of the helium-like ions. JETP, 1999, 116 (6), 1889.Grinberg A.A., Belorusets E.D. On the energy spectrum of multiply charged impurity centers in semiconductors. Solid State Physics, 1978, 20, P. 1970–1978.Grinberg A.A., Belorusets E.D. On the energy spectrum of multiply charged impurity centers in semiconductors. Solid State Physics, 1978, 20, P. 1970–1978.Huant S., Najda S.P., Etienne B. Two-dimensional D--centers. Physical Review Letters, 1990, 65, 1486.Huant S., Najda S.P., Etienne B. Two-dimensional D--centers. Physical Review Letters, 1990, 65, 1486.Durnev M.V. Zeeman splitting of the lightweight hole states in quantum wells: comparison of theory and experiment. Solid State Physics, 2014, 56 (7), 1364.Durnev M.V. Zeeman splitting of the lightweight hole states in quantum wells: comparison of theory and experiment. Solid State Physics, 2014, 56 (7), 1364.Krevchik V.D., Zaitsev R.V., Evstifeev V.V. To the photoionization theory for the deep impurity centers in a parabolic quantum well. Physics and technology of semiconductors, 2000, 34 (10), 1244.Krevchik V.D., Zaitsev R.V., Evstifeev V.V. To the photoionization theory for the deep impurity centers in a parabolic quantum well. Physics and technology of semiconductors, 2000, 34 (10), 1244.

The authors declare that there are no conflicts of interest present.