najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2017-8-3-386-390najo-617Research ArticlePHYSICSФИЗИКАIndirect interaction of impurity spins on the surface of topological insulatorsTenA. V.

Volgograd

ten.anastasia@volsu.ruBelonenkoM. B.

Volgograd

mbelonenko@yandex.ruVolgograd State UniversityRussian FederationVolgograd Institute of BusinessRussian Federation20171108202583386390Copyright © Ten A.V., Belonenko M.B., 20252025Ten A.V., Belonenko M.B.Ten A.V., Belonenko M.B.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/617

In this work, a mathematical model to study the indirect interaction in topological insulators was constructed. Analysis of the model was carried out numerically. We have calculated the indirect exchange interaction in the film of a topological insulator, for example Bi2Te3, within the s–d model. The calculations showed that the magnetic ordering of the impurity spins varies periodically with increasing distance between atoms, asymptotically decreasing to zero. λ is a parameter associated with hexagonal distortion and is a component of the dispersion relation. The dependence of the constants of the effective exchange interaction upon the λ parameter is shown; this parameter characterizes the crystal lattice geometry for a topological insulator.

topological insulatorsimpurity spinindirect exchanges–d modelThis work was supported by Russian Foundation for Basic Research (grants No. 16-32-00230 mol a, No. 16- 07-01265), mathematical and numerical modeling was carried out within the framework of government task by the Ministry of Education and Science of the Russian Federation (research work title No. 2.852.2017/4.6).ReferencesLin H., Markiewicz R.S., Wray L.A., Fu L., Hasan M.Z., Bansil A. Single-Dirac-Cone Topological Surface States in the TlBiSe2 Class of Topological Semiconductors. Phys. Rev Lett., 2010, 105, P. 036404.Lin H., Markiewicz R.S., Wray L.A., Fu L., Hasan M.Z., Bansil A. Single-Dirac-Cone Topological Surface States in the TlBiSe2 Class of Topological Semiconductors. Phys. Rev Lett., 2010, 105, P. 036404.Fert A. The origin, development and future of spintronics. Physics-Uspekhi, 2008, 178, P. 1336.Fert A. The origin, development and future of spintronics. Physics-Uspekhi, 2008, 178, P. 1336.Zutic I., Fabian J., Das Sarma S. Spintronics: Fundamentals and applications. Rev. Mod. Phys., 2004, 76, P. 323.Zutic I., Fabian J., Das Sarma S. Spintronics: Fundamentals and applications. Rev. Mod. Phys., 2004, 76, P. 323.Gulyaev Yu.V., Zilbelman P.E., Panas A.I., Epstein E.M. Spintronics: exchange switching of ferromagnetic metallic junctions at a low current density. Physics-Uspekhi, 2009, 179, P. 359.Gulyaev Yu.V., Zilbelman P.E., Panas A.I., Epstein E.M. Spintronics: exchange switching of ferromagnetic metallic junctions at a low current density. Physics-Uspekhi, 2009, 179, P. 359.Belonenko M.B., Lebedev N.G., Pak A.V. Features of the indirect interaction in the doped bilayer graphene within the s–d-model. Physics of the Solid State, 2011, 53(8), P. 1604.Belonenko M.B., Lebedev N.G., Pak A.V. Features of the indirect interaction in the doped bilayer graphene within the s–d-model. Physics of the Solid State, 2011, 53(8), P. 1604.Belonenko M.B., Lebedev N.G., Pak A.V. Study indirect interaction in bilayer graphene quantum dots within the s–d-model, Applied Physics Letters, 2011, 37(15), P. 69.Belonenko M.B., Lebedev N.G., Pak A.V. Study indirect interaction in bilayer graphene quantum dots within the s–d-model, Applied Physics Letters, 2011, 37(15), P. 69.Zhukov A.V., Bouffanais R., Pak A.V., Belonenko M.B. Study of the indirect exchange interaction in a strained graphene nanoribbon. Physica B, 2013, 419, P. 62–65.Zhukov A.V., Bouffanais R., Pak A.V., Belonenko M.B. Study of the indirect exchange interaction in a strained graphene nanoribbon. Physica B, 2013, 419, P. 62–65.Dugaev V.K., Litvinov V.I., Barnas J. Phys. Rev. B, Exchange interaction of magnetic impurities in graphene. 2006, 74, P. 224438.Dugaev V.K., Litvinov V.I., Barnas J. Phys. Rev. B, Exchange interaction of magnetic impurities in graphene. 2006, 74, P. 224438.Saeed Saremi. RKKY in half-filled bipartite lattices: Graphene as an example. Phys. Rev. B, 2007, 76, P. 184430.Saeed Saremi. RKKY in half-filled bipartite lattices: Graphene as an example. Phys. Rev. B, 2007, 76, P. 184430.Konobeeva N.N., Belonenko M.B., Zhukov A.V. Few-Cycle Optical Pulses in Thin Film of Topological Insulator with Taking into Account the Nonlinearity of Medium. Universal Journal of Physics and Application, 2013, 1(3), P. 232–235.Konobeeva N.N., Belonenko M.B., Zhukov A.V. Few-Cycle Optical Pulses in Thin Film of Topological Insulator with Taking into Account the Nonlinearity of Medium. Universal Journal of Physics and Application, 2013, 1(3), P. 232–235.White R. Quantum theory of magnetism. Mir, M. 1988, 304 pp.White R. Quantum theory of magnetism. Mir, M. 1988, 304 pp.Lin H., Markiewicz R.S., Wray L.A., Fu L., Hasan M.Z., Bansil A. Physical Review Letter. Single-Dirac-Cone Topological Surface States in the TlBiSe2. Class of Topological Semiconductors, 2010, 105, P. 036404.Lin H., Markiewicz R.S., Wray L.A., Fu L., Hasan M.Z., Bansil A. Physical Review Letter. Single-Dirac-Cone Topological Surface States in the TlBiSe2. Class of Topological Semiconductors, 2010, 105, P. 036404.Reinthaler R.W., Hankiewicz E.M. Interplay of bulk and edge states in transport of two-dimensional topological insulators. Phys. Rev. B, 2012, 85, P. 165450.Reinthaler R.W., Hankiewicz E.M. Interplay of bulk and edge states in transport of two-dimensional topological insulators. Phys. Rev. B, 2012, 85, P. 165450.Xing Ya., Zhang L., Wang J. Topological Anderson insulator phenomena. Phys. Rev. B, 2011, 84, P. 035110.Xing Ya., Zhang L., Wang J. Topological Anderson insulator phenomena. Phys. Rev. B, 2011, 84, P. 035110.

The authors declare that there are no conflicts of interest present.