najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2017-8-6-823-829najo-661Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХPreparation of Au/TiO2/Ti memristive elements via anodic oxidationPreparation of Au/TiO2/Ti memristive elements via anodic oxidationMorozovaP. A.MorozovaP. A.

Skolkovo, Nobel Street, 3, Moscow Region, 143026; Leninskie gory, 1, building 73, Moscow, 119991

Skolkovo, Nobel Street, 3, Moscow Region, 143026; Leninskie gory, 1, building 73, Moscow, 119991

polina.morozova@skoltech.ruPetukhovD. I.PetukhovD. I.

Leninskie gory, 1, building 73, Moscow, 119991

Leninskie gory, 1, building 73, Moscow, 119991

di.petukhov@gmail.comSkolkovo Institute of Science and Technology; Lomonosov Moscow State University, Department of Materials ScienceSkolkovo Institute of Science and Technology; Lomonosov Moscow State University, Department of Materials ScienceLomonosov Moscow State University, Department of Materials ScienceLomonosov Moscow State University, Department of Materials Science20171208202586823829Copyright © Morozova P.A., Petukhov D.I., 20252025Morozova P.A., Petukhov D.I.Morozova P.A., Petukhov D.I.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/661

In the present paper we report utilization of porous and barrier type of titania films formed by anodic oxidation as an active layer of the memristive element in the Au–TiO2–Ti structure. The comparison of semiconductor properties of porous and barrier type of anodic titania was performed via the Mott–Schottky technique. The obtained memristive elements show the bipolar type of switching governed by Schottky barrier screening. For barrier type film the switching potential is equal to −1.5 V and the ratio of resistance in OFF and ON stage (Roff /Ron) is equal to 34. For porous type films, the switching potential is equal to −0.6 V and Roff /Ron = 131. Moreover, we observed the dependence of Roff /Ron on the voltage sweeping rate, which can be explained by the limitation in diffusion of oxygen vacancies through the oxide layer.

In the present paper we report utilization of porous and barrier type of titania films formed by anodic oxidation as an active layer of the memristive element in the Au–TiO2–Ti structure. The comparison of semiconductor properties of porous and barrier type of anodic titania was performed via the Mott–Schottky technique. The obtained memristive elements show the bipolar type of switching governed by Schottky barrier screening. For barrier type film the switching potential is equal to −1.5 V and the ratio of resistance in OFF and ON stage (Roff /Ron) is equal to 34. For porous type films, the switching potential is equal to −0.6 V and Roff /Ron = 131. Moreover, we observed the dependence of Roff /Ron on the voltage sweeping rate, which can be explained by the limitation in diffusion of oxygen vacancies through the oxide layer.

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The authors declare that there are no conflicts of interest present.