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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2017-8-6-782-786</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-663</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>CHEMISTRY AND MATERIALS SCIENCE</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ХИМИЯ И НАУКА О МАТЕРИАЛАХ</subject></subj-group></article-categories><title-group><article-title>CdS quantum dot sensitized zinc oxide based solar cell with aluminum counter electrode</article-title><trans-title-group xml:lang="ru"><trans-title>CdS quantum dot sensitized zinc oxide based solar cell with aluminum counter electrode</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ganguly</surname><given-names>A.</given-names></name><name name-style="western" xml:lang="en"><surname>Ganguly</surname><given-names>A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Silchar, Assam-788010</p></bio><bio xml:lang="en"><p>Silchar, Assam-788010</p></bio><email xlink:type="simple">avigyan_ganguly@hotmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Nath</surname><given-names>S. S.</given-names></name><name name-style="western" xml:lang="en"><surname>Nath</surname><given-names>S. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Silchar, Assam-788011</p></bio><bio xml:lang="en"><p>Silchar, Assam-788011</p></bio><email xlink:type="simple">nathss08@gmail.com</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Gope</surname><given-names>G.</given-names></name><name name-style="western" xml:lang="en"><surname>Gope</surname><given-names>G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Silchar, Assam-788011</p></bio><bio xml:lang="en"><p>Silchar, Assam-788011</p></bio><email xlink:type="simple">gopemail@gmail.com</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Choudhury</surname><given-names>M.</given-names></name><name name-style="western" xml:lang="en"><surname>Choudhury</surname><given-names>M.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Silchar, Assam-788010</p></bio><bio xml:lang="en"><p>Silchar, Assam-788010</p></bio><email xlink:type="simple">m_chhanda@rediffmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>National Institute of Technology</institution></aff><aff xml:lang="en"><institution>National Institute of Technology</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>CIL, Assam University</institution></aff><aff xml:lang="en"><institution>CIL, Assam University</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2017</year></pub-date><pub-date pub-type="epub"><day>12</day><month>08</month><year>2025</year></pub-date><volume>8</volume><issue>6</issue><fpage>782</fpage><lpage>786</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Ganguly A., Nath S.S., Gope G., Choudhury M., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Ganguly A., Nath S.S., Gope G., Choudhury M.</copyright-holder><copyright-holder xml:lang="en">Ganguly A., Nath S.S., Gope G., Choudhury M.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/663">https://nanojournal.ifmo.ru/jour/article/view/663</self-uri><abstract><p>High cost conducting metals such as Au or Pt are generally used as counter electrodes in quantum dot sensitized solar cells. In this article, we report working of a CdS quantum dot sensitized ZnO thin film solar cell, having FTO as working electrode and aluminium as counter electrode. The CdS quantum dots are prepared by simple low cost chemical technique and characterized by absorption spectroscopy, X-ray diffraction, atomic force microscopy and high resolution trans electron microscopy. These quantum dots are used as an active layer in a solar cell and current density–voltage characteristic of the solar cell is obtained under white light illumination and dark conditions.</p></abstract><trans-abstract xml:lang="ru"><p>High cost conducting metals such as Au or Pt are generally used as counter electrodes in quantum dot sensitized solar cells. In this article, we report working of a CdS quantum dot sensitized ZnO thin film solar cell, having FTO as working electrode and aluminium as counter electrode. The CdS quantum dots are prepared by simple low cost chemical technique and characterized by absorption spectroscopy, X-ray diffraction, atomic force microscopy and high resolution trans electron microscopy. These quantum dots are used as an active layer in a solar cell and current density–voltage characteristic of the solar cell is obtained under white light illumination and dark conditions.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>CdS quantum dots</kwd><kwd>solar cell</kwd><kwd>Al counter electrode</kwd></kwd-group><kwd-group xml:lang="en"><kwd>CdS quantum dots</kwd><kwd>solar cell</kwd><kwd>Al counter electrode</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Shockley W., Queisser H.J. Detailed balance limit of efficiency of p-n junction solar cells. 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