najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2024-15-2-204-214najo-68Research ArticlePHYSICSФИЗИКАTunneling recombination in GaN/InGaN LEDs with a single quantum wellТуннельная рекомбинация в светодиодах GaN/GaInN с одной квантовой ямойhttps://orcid.org/0000-0002-9777-746XБулярскийС. В.BulyarskyS. V.

Sergey V. Bulyarsky.

Leninskiy prospect, 32A, Moscow 119991

dimka97@mail.ruhttps://orcid.org/0000-0001-9602-0812ВострецоваЛ. Н.VostretsovaL. N.

Liubov N. Vostretsova.

Tolstoy street, 42, Ulyanovsk 432097

kapiton04@yandex.ruhttps://orcid.org/0000-0002-9233-5339РибенекВ. А.RibenekV. A.

Valeriya A. Ribenek.

Tolstoy street, 42, Ulyanovsk 432097

ribl98@mail.ruInstitute of Nanotechnology of Microelectronics of the Russian Academy of Sciences (INME RAS)Russian FederationUlyanovsk State UniversityRussian Federation202431052025152204214Copyright © Bulyarsky S.V., Vostretsova L.N., Ribenek V.A., 20252025Булярский С.В., Вострецова Л.Н., Рибенек В.А.Bulyarsky S.V., Vostretsova L.N., Ribenek V.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/68

The paper proposes an analytical model of tunneling-recombination processes with forward and reverse displacements in InGaN/GaN-based structures containing a quantum well, assuming that the processes of generation and recombination are complex, while one of the stages of the transition of the charge carrier to the center is tunneling. Comparing the model with the experiment allowed us to determine the energies of the recombination centers of 0.22 and 0.45 eV. These energies may correspond to centers formed by defect complexes along filamentous dislocations, such as divacansions (VGa VN ), and a point isolated defect observed in n-type GaN layers grown by various methods, respectively.

В работе предложена аналитическая модель туннельно-рекомбинационных процессов при прямом и обратном смещениях в светодиодных структурах на основе InGaN/GaN с квантовой ямой. Сопоставление модели с экспериментом позволило определить энергии центров рекомбинации в КЯ – 0.22 и 0.45 эВ. Эти энергии могут соответствовать центрам, которые образованы дефектными комплексами вдоль нитевидных дислокаций, таких как дивакансии ((VGa VN), и точечным изолированным дефектом, который наблюдается в слоях GaN n-типа, выращенных различными методами, соответственно.

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The authors declare that there are no conflicts of interest present.